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Title: Absence of strong localization at low conductivity in the topological surface state of low-disorder Sb 2 Te 3

Abstract

We present low-temperature transport measurements of a gate-tunable thin-film topological insulator system that features high mobility and low carrier density. Upon gate tuning to a regime around the charge neutrality point, we infer an absence of strong localization even at conductivities well below e 2/h, where two-dimensional electron systems should conventionally scale to an insulating state. Oddly, in this regime the localization coherence peak lacks conventional temperature broadening, though its tails do change dramatically with temperature. As a result, using a model with electron-impurity scattering, we extract values for the disorder potential and the hybridization of the top and bottom surface states.

Authors:
 [1];  [2];  [2];  [3];  [4];  [3];  [5];  [1]
  1. Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
  2. National Univ. of Singapore (Singapore)
  3. Rutgers Univ., Piscataway, NJ (United States)
  4. Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Science Philanthropy Alliance, Palo Alto, CA (United States)
  5. National Univ. of Singapore (Singapore); Yale-NUS College (Singapore)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1532405
Alternate Identifier(s):
OSTI ID: 1510361
Grant/Contract Number:  
AC02-76SF00515; GBMF3429; GBMF4418; ECCS-1542152; EFMA-1542798; R-607-000-094-133; MOE2017-T2-1-130
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 99; Journal Issue: 20; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English

Citation Formats

Rosen, Ilan T., Yudhistira, Indra, Sharma, Girish, Salehi, Maryam, Kastner, M. A., Oh, Seongshik, Adam, Shaffique, and Goldhaber-Gordon, David. Absence of strong localization at low conductivity in the topological surface state of low-disorder Sb2Te3. United States: N. p., 2019. Web. doi:10.1103/physrevb.99.201101.
Rosen, Ilan T., Yudhistira, Indra, Sharma, Girish, Salehi, Maryam, Kastner, M. A., Oh, Seongshik, Adam, Shaffique, & Goldhaber-Gordon, David. Absence of strong localization at low conductivity in the topological surface state of low-disorder Sb2Te3. United States. doi:10.1103/physrevb.99.201101.
Rosen, Ilan T., Yudhistira, Indra, Sharma, Girish, Salehi, Maryam, Kastner, M. A., Oh, Seongshik, Adam, Shaffique, and Goldhaber-Gordon, David. Thu . "Absence of strong localization at low conductivity in the topological surface state of low-disorder Sb2Te3". United States. doi:10.1103/physrevb.99.201101.
@article{osti_1532405,
title = {Absence of strong localization at low conductivity in the topological surface state of low-disorder Sb2Te3},
author = {Rosen, Ilan T. and Yudhistira, Indra and Sharma, Girish and Salehi, Maryam and Kastner, M. A. and Oh, Seongshik and Adam, Shaffique and Goldhaber-Gordon, David},
abstractNote = {We present low-temperature transport measurements of a gate-tunable thin-film topological insulator system that features high mobility and low carrier density. Upon gate tuning to a regime around the charge neutrality point, we infer an absence of strong localization even at conductivities well below e2/h, where two-dimensional electron systems should conventionally scale to an insulating state. Oddly, in this regime the localization coherence peak lacks conventional temperature broadening, though its tails do change dramatically with temperature. As a result, using a model with electron-impurity scattering, we extract values for the disorder potential and the hybridization of the top and bottom surface states.},
doi = {10.1103/physrevb.99.201101},
journal = {Physical Review B},
number = 20,
volume = 99,
place = {United States},
year = {2019},
month = {5}
}

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Works referenced in this record:

Topological Insulators in Three Dimensions
journal, March 2007


Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
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Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
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