Absence of strong localization at low conductivity in the topological surface state of low-disorder
Abstract
We present low-temperature transport measurements of a gate-tunable thin-film topological insulator system that features high mobility and low carrier density. Upon gate tuning to a regime around the charge neutrality point, we infer an absence of strong localization even at conductivities well below e2/h, where two-dimensional electron systems should conventionally scale to an insulating state. Oddly, in this regime the localization coherence peak lacks conventional temperature broadening, though its tails do change dramatically with temperature. As a result, using a model with electron-impurity scattering, we extract values for the disorder potential and the hybridization of the top and bottom surface states.
- Authors:
-
- Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
- National Univ. of Singapore (Singapore)
- Rutgers Univ., Piscataway, NJ (United States)
- Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Science Philanthropy Alliance, Palo Alto, CA (United States)
- National Univ. of Singapore (Singapore); Yale-NUS College (Singapore)
- Publication Date:
- Research Org.:
- SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1532405
- Alternate Identifier(s):
- OSTI ID: 1510361
- Grant/Contract Number:
- AC02-76SF00515; GBMF3429; GBMF4418; ECCS-1542152; EFMA-1542798; R-607-000-094-133; MOE2017-T2-1-130
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 99; Journal Issue: 20; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Rosen, Ilan T., Yudhistira, Indra, Sharma, Girish, Salehi, Maryam, Kastner, M. A., Oh, Seongshik, Adam, Shaffique, and Goldhaber-Gordon, David. Absence of strong localization at low conductivity in the topological surface state of low-disorder Sb2Te3. United States: N. p., 2019.
Web. doi:10.1103/physrevb.99.201101.
Rosen, Ilan T., Yudhistira, Indra, Sharma, Girish, Salehi, Maryam, Kastner, M. A., Oh, Seongshik, Adam, Shaffique, & Goldhaber-Gordon, David. Absence of strong localization at low conductivity in the topological surface state of low-disorder Sb2Te3. United States. https://doi.org/10.1103/physrevb.99.201101
Rosen, Ilan T., Yudhistira, Indra, Sharma, Girish, Salehi, Maryam, Kastner, M. A., Oh, Seongshik, Adam, Shaffique, and Goldhaber-Gordon, David. Thu .
"Absence of strong localization at low conductivity in the topological surface state of low-disorder Sb2Te3". United States. https://doi.org/10.1103/physrevb.99.201101. https://www.osti.gov/servlets/purl/1532405.
@article{osti_1532405,
title = {Absence of strong localization at low conductivity in the topological surface state of low-disorder Sb2Te3},
author = {Rosen, Ilan T. and Yudhistira, Indra and Sharma, Girish and Salehi, Maryam and Kastner, M. A. and Oh, Seongshik and Adam, Shaffique and Goldhaber-Gordon, David},
abstractNote = {We present low-temperature transport measurements of a gate-tunable thin-film topological insulator system that features high mobility and low carrier density. Upon gate tuning to a regime around the charge neutrality point, we infer an absence of strong localization even at conductivities well below e2/h, where two-dimensional electron systems should conventionally scale to an insulating state. Oddly, in this regime the localization coherence peak lacks conventional temperature broadening, though its tails do change dramatically with temperature. As a result, using a model with electron-impurity scattering, we extract values for the disorder potential and the hybridization of the top and bottom surface states.},
doi = {10.1103/physrevb.99.201101},
journal = {Physical Review B},
number = 20,
volume = 99,
place = {United States},
year = {Thu May 02 00:00:00 EDT 2019},
month = {Thu May 02 00:00:00 EDT 2019}
}
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Works referenced in this record:
Weak localization effects as evidence for bulk quantization in Bi Se thin films
journal, September 2013
- Zhang, Li; Dolev, Merav; Yang, Qi I.
- Physical Review B, Vol. 88, Issue 12
Effects of bulk charged impurities on the bulk and surface transport in three-dimensional topological insulators
journal, September 2013
- Skinner, B.; Chen, T.; Shklovskii, B. I.
- Journal of Experimental and Theoretical Physics, Vol. 117, Issue 3
Landau Quantization and the Thickness Limit of Topological Insulator Thin Films of
journal, January 2012
- Jiang, Yeping; Wang, Yilin; Chen, Mu
- Physical Review Letters, Vol. 108, Issue 1
Disorder-Induced Magnetoresistance in a Two-Dimensional Electron System
journal, July 2014
- Ping, Jinglei; Yudhistira, Indra; Ramakrishnan, Navneeth
- Physical Review Letters, Vol. 113, Issue 4
Charge transport and inhomogeneity near the minimum conductivity point in graphene
journal, February 2008
- Cho, Sungjae; Fuhrer, Michael S.
- Physical Review B, Vol. 77, Issue 8
The Metalliclike Conductivity of a Two-Dimensional Hole System
journal, February 1998
- Hanein, Y.; Meirav, U.; Shahar, D.
- Physical Review Letters, Vol. 80, Issue 6
Topological Delocalization of Two-Dimensional Massless Dirac Fermions
journal, October 2007
- Nomura, Kentaro; Koshino, Mikito; Ryu, Shinsei
- Physical Review Letters, Vol. 99, Issue 14
Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering
journal, November 2015
- Koirala, Nikesh; Brahlek, Matthew; Salehi, Maryam
- Nano Letters, Vol. 15, Issue 12
Observation of quantum-tunnelling-modulated spin texture in ultrathin topological insulator Bi2Se3 films
journal, May 2014
- Neupane, Madhab; Richardella, Anthony; Sánchez-Barriga, Jaime
- Nature Communications, Vol. 5, Issue 1
Evidence for electron-electron interaction in topological insulator thin films
journal, June 2011
- Wang, Jian; DaSilva, Ashley M.; Chang, Cui-Zu
- Physical Review B, Vol. 83, Issue 24
Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
journal, May 2009
- Xia, Y.; Qian, D.; Hsieh, D.
- Nature Physics, Vol. 5, Issue 6, p. 398-402
Defect Scattering in Graphene
journal, June 2009
- Chen, Jian-Hao; Cullen, W. G.; Jang, C.
- Physical Review Letters, Vol. 102, Issue 23
Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System
journal, February 1980
- Hikami, S.; Larkin, A. I.; Nagaoka, Y.
- Progress of Theoretical Physics, Vol. 63, Issue 2
Two-stage proximity-induced gap opening in topological-insulator–insulating-ferromagnet – bilayers
journal, August 2018
- Yang, Qi I.; Kapitulnik, Aharon
- Physical Review B, Vol. 98, Issue 8
Direct observation of a widely tunable bandgap in bilayer graphene
journal, June 2009
- Zhang, Yuanbo; Tang, Tsung-Ta; Girit, Caglar
- Nature, Vol. 459, Issue 7248
Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
journal, May 2009
- Zhang, Haijun; Liu, Chao-Xing; Qi, Xiao-Liang
- Nature Physics, Vol. 5, Issue 6, p. 438-442
Finite-Temperature Conductivity and Magnetoconductivity of Topological Insulators
journal, April 2014
- Lu, Hai-Zhou; Shen, Shun-Qing
- Physical Review Letters, Vol. 112, Issue 14
Topological Insulators in Three Dimensions
journal, March 2007
- Fu, Liang; Kane, C. L.; Mele, E. J.
- Physical Review Letters, Vol. 98, Issue 10, Article No. 106803
Gate-Voltage Control of Chemical Potential and Weak Antilocalization in
journal, October 2010
- Chen, J.; Qin, H. J.; Yang, F.
- Physical Review Letters, Vol. 105, Issue 17
Insulating Behavior at the Neutrality Point in Single-Layer Graphene
journal, May 2013
- Amet, F.; Williams, J. R.; Watanabe, K.
- Physical Review Letters, Vol. 110, Issue 21
Observation of the Quantum Anomalous Hall Insulator to Anderson Insulator Quantum Phase Transition and its Scaling Behavior
journal, September 2016
- Chang, Cui-Zu; Zhao, Weiwei; Li, Jian
- Physical Review Letters, Vol. 117, Issue 12
Disordered electronic systems
journal, April 1985
- Lee, Patrick A.; Ramakrishnan, T. V.
- Reviews of Modern Physics, Vol. 57, Issue 2
Thickness-dependent bulk properties and weak antilocalization effect in topological insulator Bi Se
journal, August 2011
- Kim, Yong Seung; Brahlek, Matthew; Bansal, Namrata
- Physical Review B, Vol. 84, Issue 7
Weak localization and weak anti-localization in topological insulators
conference, August 2014
- Lu, Hai-Zhou; Shen, Shun-Qing
- SPIE NanoScience + Engineering, SPIE Proceedings
Mobility engineering and a metal–insulator transition in monolayer MoS2
journal, June 2013
- Radisavljevic, Branimir; Kis, Andras
- Nature Materials, Vol. 12, Issue 9
Band structure engineering in (Bi1−xSbx)2Te3 ternary topological insulators
journal, September 2011
- Zhang, Jinsong; Chang, Cui-Zu; Zhang, Zuocheng
- Nature Communications, Vol. 2, Issue 1
Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit
journal, June 2010
- Zhang, Yi; He, Ke; Chang, Cui-Zu
- Nature Physics, Vol. 6, Issue 8
Self-organized charge puddles in a three-dimensional topological material
journal, June 2016
- Borgwardt, N.; Lux, J.; Vergara, I.
- Physical Review B, Vol. 93, Issue 24
Competing Weak Localization and Weak Antilocalization in Ultrathin Topological Insulators
journal, December 2012
- Lang, Murong; He, Liang; Kou, Xufeng
- Nano Letters, Vol. 13, Issue 1
Electronic Transport in Dual-Gated Bilayer Graphene at Large Displacement Fields
journal, October 2010
- Taychatanapat, Thiti; Jarillo-Herrero, Pablo
- Physical Review Letters, Vol. 105, Issue 16
Signatures of long-range-correlated disorder in the magnetotransport of ultrathin topological insulators
journal, December 2018
- Nandi, D.; Skinner, B.; Lee, G. H.
- Physical Review B, Vol. 98, Issue 21
Observation of Anderson Localization in Ultrathin Films of Three-Dimensional Topological Insulators
journal, May 2015
- Liao, Jian; Ou, Yunbo; Feng, Xiao
- Physical Review Letters, Vol. 114, Issue 21
Scaling of an anomalous metal-insulator transition in a two-dimensional system in silicon at B =0
journal, March 1995
- Kravchenko, S. V.; Mason, Whitney E.; Bowker, G. E.
- Physical Review B, Vol. 51, Issue 11
Equivalence of effective medium and random resistor network models for disorder-induced unsaturating linear magnetoresistance
journal, December 2017
- Ramakrishnan, Navneeth; Lai, Ying Tong; Lara, Silvia
- Physical Review B, Vol. 96, Issue 22
Metal-Insulator Transition at in a Dilute Two Dimensional GaAs-AlGaAs Hole Gas
journal, February 1998
- Simmons, M. Y.; Hamilton, A. R.; Pepper, M.
- Physical Review Letters, Vol. 80, Issue 6
Conductivity corrections for topological insulators with spin-orbit impurities: Hikami-Larkin-Nagaoka formula revisited
journal, December 2015
- Adroguer, P.; Liu, Weizhe E.; Culcer, D.
- Physical Review B, Vol. 92, Issue 24
Enhancement of carrier lifetime by spin–orbit coupling in a topological insulator of an Sb 2 Te 3 thin film
journal, January 2016
- Choi, Hyejin; Jung, Seonghoon; Kim, Tae Hyeon
- Nanoscale, Vol. 8, Issue 45
Massive Dirac fermions and spin physics in an ultrathin film of topological insulator
journal, March 2010
- Lu, Hai-Zhou; Shan, Wen-Yu; Yao, Wang
- Physical Review B, Vol. 81, Issue 11
Anomalous finite size effects on surface states in the topological insulator
journal, November 2009
- Linder, Jacob; Yokoyama, Takehito; Sudbø, Asle
- Physical Review B, Vol. 80, Issue 20