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Title: Homoepitaxial growth of 9,10-diphenylanthracene

Abstract

Organic single crystals are often shown to have significantly improved optoelectronic properties over polycrystalline thin films such as exciton diffusivity and carrier mobility. There is growing interest in incorporating such crystals in organic electronics despite a number of challenges. In this work, the homoepitaxial vapor phase growth modes for 9,10-diphenylanthracene (DPA) homoepitaxy are mapped as a function of growth rate and temperature using in situ ultra-low current reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), and atomic force microscopy (AFM). Vapor phase deposition was performed on free-standing single crystal DPA substrates, which show clear Kikuchi patterns. At room temperature, a transition from Frank-Van der Merwe layer-by-layer growth to step-flow growth is observed as the deposition rate is decreased, while at lower temperatures a Stranski-Krastanov layer-plus-island growth is observed. This is the first demonstration of true step-flow growth from room temperature vapor phase deposition for organic semiconductors and is reminiscent of traditional semiconductor growth regimes. Accordingly, these results could lead to improved control over growth and doping of organic single crystals, and lead to enhanced single crystal organic optoelectronic applications.

Authors:
 [1];  [1]
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  1. Michigan State Univ., East Lansing, MI (United States)
Publication Date:
Research Org.:
Michigan State Univ., East Lansing, MI (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1802115
Alternate Identifier(s):
OSTI ID: 1635142
Grant/Contract Number:  
SC0010472
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 546; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Chen, Pei, and Lunt, Richard R. Homoepitaxial growth of 9,10-diphenylanthracene. United States: N. p., 2020. Web. doi:10.1016/j.jcrysgro.2020.125771.
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Chen, Pei, & Lunt, Richard R. Homoepitaxial growth of 9,10-diphenylanthracene. United States. https://doi.org/10.1016/j.jcrysgro.2020.125771
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Chen, Pei, and Lunt, Richard R. Wed . "Homoepitaxial growth of 9,10-diphenylanthracene". United States. https://doi.org/10.1016/j.jcrysgro.2020.125771. https://www.osti.gov/servlets/purl/1802115.
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@article{osti_1802115,
title = {Homoepitaxial growth of 9,10-diphenylanthracene},
author = {Chen, Pei and Lunt, Richard R.},
abstractNote = {Organic single crystals are often shown to have significantly improved optoelectronic properties over polycrystalline thin films such as exciton diffusivity and carrier mobility. There is growing interest in incorporating such crystals in organic electronics despite a number of challenges. In this work, the homoepitaxial vapor phase growth modes for 9,10-diphenylanthracene (DPA) homoepitaxy are mapped as a function of growth rate and temperature using in situ ultra-low current reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), and atomic force microscopy (AFM). Vapor phase deposition was performed on free-standing single crystal DPA substrates, which show clear Kikuchi patterns. At room temperature, a transition from Frank-Van der Merwe layer-by-layer growth to step-flow growth is observed as the deposition rate is decreased, while at lower temperatures a Stranski-Krastanov layer-plus-island growth is observed. This is the first demonstration of true step-flow growth from room temperature vapor phase deposition for organic semiconductors and is reminiscent of traditional semiconductor growth regimes. Accordingly, these results could lead to improved control over growth and doping of organic single crystals, and lead to enhanced single crystal organic optoelectronic applications.},
doi = {10.1016/j.jcrysgro.2020.125771},
journal = {Journal of Crystal Growth},
number = ,
volume = 546,
place = {United States},
year = {Wed Jun 17 00:00:00 EDT 2020},
month = {Wed Jun 17 00:00:00 EDT 2020}
}
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https://doi.org/10.1016/j.jcrysgro.2020.125771
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