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Title: Homoepitaxial growth of metal halide crystals investigated by reflection high-energy electron diffraction

Here, we report the homoepitaxial growth of a metal halide on single crystals investigated with in situ reflection high-energy electron diffraction (RHEED) and ex situ atomic force microscopy (AFM). Epitaxial growth of NaCl on NaCl (001) is explored as a function of temperature and growth rate which provides the first detailed report of RHEED oscillations for metal halide growth. Layer-by-layer growth is observed at room temperature accompanied by clear RHEED oscillations while the growth mode transitions to an island (3D) mode at low temperature. At higher temperatures (>100 °C), RHEED oscillations and AFM data indicate a transition to a step-flow growth mode. To show the importance of such metal halide growth, green organic light-emitting diodes (OLEDs) are demonstrated using a doped NaCl film with a phosphorescent emitter as the emissive layer. This study demonstrates the ability to perform in situ and non-destructive RHEED monitoring even on insulating substrates and could enable doped single crystals and crystalline substrates for a range of optoelectronic applications.
Authors:
 [1] ;  [1] ;  [1] ;  [1]
  1. Michigan State Univ., East Lansing, MI (United States)
Publication Date:
Grant/Contract Number:
SC0010472
Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 7; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Research Org:
Michigan State Univ., East Lansing, MI (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; electronics devices; materials for optics; surfaces, interfaces and thin films
OSTI Identifier:
1346028

Chen, Pei, Kuttipillai, Padmanaban S., Wang, Lili, and Lunt, Richard R.. Homoepitaxial growth of metal halide crystals investigated by reflection high-energy electron diffraction. United States: N. p., Web. doi:10.1038/srep40542.
Chen, Pei, Kuttipillai, Padmanaban S., Wang, Lili, & Lunt, Richard R.. Homoepitaxial growth of metal halide crystals investigated by reflection high-energy electron diffraction. United States. doi:10.1038/srep40542.
Chen, Pei, Kuttipillai, Padmanaban S., Wang, Lili, and Lunt, Richard R.. 2017. "Homoepitaxial growth of metal halide crystals investigated by reflection high-energy electron diffraction". United States. doi:10.1038/srep40542. https://www.osti.gov/servlets/purl/1346028.
@article{osti_1346028,
title = {Homoepitaxial growth of metal halide crystals investigated by reflection high-energy electron diffraction},
author = {Chen, Pei and Kuttipillai, Padmanaban S. and Wang, Lili and Lunt, Richard R.},
abstractNote = {Here, we report the homoepitaxial growth of a metal halide on single crystals investigated with in situ reflection high-energy electron diffraction (RHEED) and ex situ atomic force microscopy (AFM). Epitaxial growth of NaCl on NaCl (001) is explored as a function of temperature and growth rate which provides the first detailed report of RHEED oscillations for metal halide growth. Layer-by-layer growth is observed at room temperature accompanied by clear RHEED oscillations while the growth mode transitions to an island (3D) mode at low temperature. At higher temperatures (>100 °C), RHEED oscillations and AFM data indicate a transition to a step-flow growth mode. To show the importance of such metal halide growth, green organic light-emitting diodes (OLEDs) are demonstrated using a doped NaCl film with a phosphorescent emitter as the emissive layer. This study demonstrates the ability to perform in situ and non-destructive RHEED monitoring even on insulating substrates and could enable doped single crystals and crystalline substrates for a range of optoelectronic applications.},
doi = {10.1038/srep40542},
journal = {Scientific Reports},
number = ,
volume = 7,
place = {United States},
year = {2017},
month = {1}
}