Transparent ferromagnetic and semiconducting behavior in Fe-Dy-Tb based amorphous oxide films
Abstract
We report a class of amorphous thin film material comprising of transition (Fe) and Lanthanide metals (Dy and Tb) that show unique combination of functional properties. Films were deposited with different atomic weight ratio (R) of Fe to Lanthanide (Dy+Tb) using electron beam co-evaporation at room temperature. The films were found to be amorphous, with grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy studies indicating that the films were largely oxidized with a majority of the metal being in higher oxidation states. Films with R=0.6 were semiconducting with visible light transmission due to a direct optical band-gap (2.49eV), had low resistivity and sheet resistance (7.15×10-4Ω-cm and ~200Ω/sq respectively), and showed room temperature ferromagnetism. A metal to semiconductor transition with composition (for R<11.9) also correlated well with the absence of any metallic Fe0 oxidation state in the R=0.6 case as well as a significantly higher fraction of oxidized Dy. The combination of amorphous microstructure and room temperature electronic and magnetic properties could lead to the use of the material in multiple applications, including as a transparent conductor, active material in thin film transistors for display devices, and in spin-dependent electronics.
- Authors:
-
- Univ. of Tennessee, Knoxville, TN (United States). Bredesen Center
- Advanced Materials Processing and Analysis Center (AMPAC), Orlando, FL (United States). NanoScience Technology Center (NSTC). Materials Science and Engineering (MSE) Department
- North Carolina A & T State Univ., Greensboro, NC (United States). NSF Engineering Research Center for Revolutionizing Metallic Biomaterials
- Univ. of Tennessee, Knoxville, TN (United States). Dept. of Material Science and Engineering
- Advanced Materials Processing and Analysis Center (AMPAC), Orlando, FL (United States). NanoScience Technology Center (NSTC). Materials Science and Engineering (MSE) Department
- Univ. of Tennessee, Knoxville, TN (United States). Bredesen Center; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Material Science and Engineering; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Chemical and Biomolecular Engineering
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division
- OSTI Identifier:
- 1624840
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Volume: 6; Journal Issue: 1; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 59 BASIC BIOLOGICAL SCIENCES; Science & Technology - Other Topics
Citation Formats
Taz, H., Sakthivel, T., Yamoah, N. K., Carr, C., Kumar, D., Seal, S., and Kalyanaraman, R. Transparent ferromagnetic and semiconducting behavior in Fe-Dy-Tb based amorphous oxide films. United States: N. p., 2016.
Web. doi:10.1038/srep27869.
Taz, H., Sakthivel, T., Yamoah, N. K., Carr, C., Kumar, D., Seal, S., & Kalyanaraman, R. Transparent ferromagnetic and semiconducting behavior in Fe-Dy-Tb based amorphous oxide films. United States. https://doi.org/10.1038/srep27869
Taz, H., Sakthivel, T., Yamoah, N. K., Carr, C., Kumar, D., Seal, S., and Kalyanaraman, R. Tue .
"Transparent ferromagnetic and semiconducting behavior in Fe-Dy-Tb based amorphous oxide films". United States. https://doi.org/10.1038/srep27869. https://www.osti.gov/servlets/purl/1624840.
@article{osti_1624840,
title = {Transparent ferromagnetic and semiconducting behavior in Fe-Dy-Tb based amorphous oxide films},
author = {Taz, H. and Sakthivel, T. and Yamoah, N. K. and Carr, C. and Kumar, D. and Seal, S. and Kalyanaraman, R.},
abstractNote = {We report a class of amorphous thin film material comprising of transition (Fe) and Lanthanide metals (Dy and Tb) that show unique combination of functional properties. Films were deposited with different atomic weight ratio (R) of Fe to Lanthanide (Dy+Tb) using electron beam co-evaporation at room temperature. The films were found to be amorphous, with grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy studies indicating that the films were largely oxidized with a majority of the metal being in higher oxidation states. Films with R=0.6 were semiconducting with visible light transmission due to a direct optical band-gap (2.49eV), had low resistivity and sheet resistance (7.15×10-4Ω-cm and ~200Ω/sq respectively), and showed room temperature ferromagnetism. A metal to semiconductor transition with composition (for R<11.9) also correlated well with the absence of any metallic Fe0 oxidation state in the R=0.6 case as well as a significantly higher fraction of oxidized Dy. The combination of amorphous microstructure and room temperature electronic and magnetic properties could lead to the use of the material in multiple applications, including as a transparent conductor, active material in thin film transistors for display devices, and in spin-dependent electronics.},
doi = {10.1038/srep27869},
journal = {Scientific Reports},
number = 1,
volume = 6,
place = {United States},
year = {Tue Jun 14 00:00:00 EDT 2016},
month = {Tue Jun 14 00:00:00 EDT 2016}
}
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