Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

Malasi, A.; Taz, H.; Farah, A.; Patel, M.; Lawrie, Benjamin; Pooser, R.; Baddorf, A.; Duscher, G.; Kalyanaraman, R.

doi:10.1038/srep18157

Title: Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

Abstract

We report that ternary metal oxides of type (Me)₂O₃ with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 10⁴ S/m) and Hall mobility (>30 cm²/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergent semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. In conclusion, since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned.

Authors:

Malasi, A. ^[1]; Taz, H. ^[1]; Farah, A. ^[1]; Patel, M. ^[1]; Lawrie, Benjamin ^[2]; Pooser, R. ^[2]; Baddorf, A. ^[3]; Duscher, G. ^[4]; Kalyanaraman, R. ^[1]

Univ. of Tennessee, Knoxville, TN (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Publication Date:: Wed Dec 16 00:00:00 EST 2015

Research Org.:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1245353

Grant/Contract Number:: AC05-00OR22725; DE-NE0000693; EPS-1004083

Resource Type:: Accepted Manuscript

Journal Name:: Scientific Reports

Additional Journal Information:: Journal Volume: 5; Journal ID: ISSN 2045-2322

Publisher:: Nature Publishing Group

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Malasi, A., Taz, H., Farah, A., Patel, M., Lawrie, Benjamin, Pooser, R., Baddorf, A., Duscher, G., and Kalyanaraman, R. Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility.  United States: N. p., 2015. 
Web.  doi:10.1038/srep18157.

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                    Malasi, A., Taz, H., Farah, A., Patel, M., Lawrie, Benjamin, Pooser, R., Baddorf, A., Duscher, G., & Kalyanaraman, R. Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility.  United States.  https://doi.org/10.1038/srep18157

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                    Malasi, A., Taz, H., Farah, A., Patel, M., Lawrie, Benjamin, Pooser, R., Baddorf, A., Duscher, G., and Kalyanaraman, R. Wed .  
"Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility".  United States.  https://doi.org/10.1038/srep18157.  https://www.osti.gov/servlets/purl/1245353.

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@article{osti_1245353,

  title        = {Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility},

  author       = {Malasi, A. and Taz, H. and Farah, A. and Patel, M. and Lawrie, Benjamin and Pooser, R. and Baddorf, A. and Duscher, G. and Kalyanaraman, R.},

  abstractNote = {We report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 104 S/m) and Hall mobility (>30 cm2/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergent semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. In conclusion, since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned.},

  doi          = {10.1038/srep18157},

  journal      = {Scientific Reports},

  number       = ,

  volume       = 5,

  place        = {United States},

  year         = {Wed Dec 16 00:00:00 EST 2015},

  month        = {Wed Dec 16 00:00:00 EST 2015}

}

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Works referencing / citing this record:

Transparent ferromagnetic and semiconducting behavior in Fe-Dy-Tb based amorphous oxide films
journal, June 2016

Taz, H.; Sakthivel, T.; Yamoah, N. K.
Scientific Reports, Vol. 6, Issue 1
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Transparent ferromagnetic and semiconducting behavior in Fe-Dy-Tb based amorphous oxide films
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Scientific Reports, Vol. 6, Issue 1
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Title: Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

Abstract

Citation Formats

Laser-Induced Self-Assembled Nanostructures on Electron-Transparent Substrates journal, November 2014

An ab initio model of electron transport in hematite (α-Fe2O3) basal planes journal, April 2003

Thickness-dependent electrical conductivities and ohmic contacts in transition metal dichalcogenides multilayers journal, September 2014

Past achievements and future challenges in the development of optically transparent electrodes journal, November 2012

Past achievements and future challenges in the development of optically transparent electrodes journal, November 2012

Preparation and applications of magnetostrictive thin films journal, November 1994

Electrical Properties of α - Fe 2 O 3 journal, March 1954

Tb 2 O 3 thin films: An alternative candidate for high-k dielectric applications journal, December 2014

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors journal, November 2004

Thickness-dependent electrical conductivities and ohmic contacts in transition metal dichalcogenides multilayers journal, September 2014

The nature of the electronic band gap in lanthanide oxides text, January 2012

Analysis of XPS spectra of Fe2+ and Fe3+ ions in oxide materials journal, February 2008

Material characteristics and applications of transparent amorphous oxide semiconductors journal, January 2010

Basic materials physics of transparent conducting oxides journal, January 2004

Advances in understanding of transparent conducting oxides journal, March 2012

An amorphous oxide semiconductor thin-film transistor route to oxide electronics journal, April 2014

Electrical conduction in non-metallic rare-earth solids journal, March 1988

Nature of the electronic band gap in lanthanide oxides journal, March 2013

Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples journal, May 1996

Composition-dependent structural and transport properties of amorphous transparent conducting oxides journal, May 2015

Electrical transport properties of Ti-doped Fe 2 O 3 (0001) epitaxial films journal, December 2011

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors journal, November 2004

Basic materials physics of transparent conducting oxides journal, January 2004

Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment and ab initio calculations journal, January 2007

Role of order and disorder in covalent semiconductors and ionic oxides used to produce thin film transistors journal, June 2007

Effect of oxidation on the magnetic properties of unprotected TbFe thin films journal, February 1986

Transparent ferromagnetic and semiconducting behavior in Fe-Dy-Tb based amorphous oxide films journal, June 2016

Transparent ferromagnetic and semiconducting behavior in Fe-Dy-Tb based amorphous oxide films journal, June 2016

Laser-Induced Self-Assembled Nanostructures on Electron-Transparent Substrates
journal, November 2014

An ab initio model of electron transport in hematite (α-Fe₂O₃) basal planes
journal, April 2003

Thickness-dependent electrical conductivities and ohmic contacts in transition metal dichalcogenides multilayers
journal, September 2014

Past achievements and future challenges in the development of optically transparent electrodes
journal, November 2012

Past achievements and future challenges in the development of optically transparent electrodes
journal, November 2012

Preparation and applications of magnetostrictive thin films
journal, November 1994

Electrical Properties of $α$ - ${Fe}_{2}$ $O_{3}$
journal, March 1954

Tb ₂ O ₃ thin films: An alternative candidate for high-k dielectric applications
journal, December 2014

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
journal, November 2004

Thickness-dependent electrical conductivities and ohmic contacts in transition metal dichalcogenides multilayers
journal, September 2014

The nature of the electronic band gap in lanthanide oxides
text, January 2012

Analysis of XPS spectra of Fe2+ and Fe3+ ions in oxide materials
journal, February 2008

Material characteristics and applications of transparent amorphous oxide semiconductors
journal, January 2010

Basic materials physics of transparent conducting oxides
journal, January 2004

Advances in understanding of transparent conducting oxides
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An amorphous oxide semiconductor thin-film transistor route to oxide electronics
journal, April 2014

Electrical conduction in non-metallic rare-earth solids
journal, March 1988

Nature of the electronic band gap in lanthanide oxides
journal, March 2013

Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples
journal, May 1996

Composition-dependent structural and transport properties of amorphous transparent conducting oxides
journal, May 2015

Electrical transport properties of Ti-doped Fe $_{2}$ $O_{3}$ (0001) epitaxial films
journal, December 2011

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
journal, November 2004

Basic materials physics of transparent conducting oxides
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Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment and ab initio calculations
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