Structural Dynamics of GaN Microcrystals in Evolutionary Selection Selective Area Growth probed by X-ray Microdiffraction
Abstract
A method to grow high quality, single crystalline semiconductor material irrespective of the substrate would allow a cost-effective improvement to functionality and performance of optoelectronic devices. Recently, a novel type of substrate-insensitive growth process called Evolutionary Selection Selective Area Growth (ES-SAG) has been proposed. Here we report the use of X-ray microdiffraction to study the structural properties of GaN microcrystals grown by ES-SAG. Utilizing high resolution in both direct and reciprocal spaces, we have unraveled structural dynamics of GaN microcrystals in growth structures of different dimensions. It has been found that the geometric proportions of the growth constrictions play an important role: 2.6 mm and 4.5 mm wide growth tunnels favor the evolutionary selection mechanism, contrary to the case of 8.6 mm growth tunnels. It was also found that GaN microcrystal ensembles are dominated by slight tensile strain irrespective of growth tunnel shape.
- Authors:
-
- Science and Technology Facilities Council (STFC), Oxford (United Kingdom). Diamond Light Source, Ltd.
- Yale Univ., New Haven, CT (United States). Dept. of Electrical Engineering
- Univ. of Strathclyde, Glasgow, Scotland (United Kingdom). Dept. of Physics
- Publication Date:
- Research Org.:
- Yale Univ., New Haven, CT (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1624704
- Grant/Contract Number:
- SC0001134
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Volume: 4; Journal Issue: 1; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Science & Technology - Other Topics; ELECTRONIC DEVICES; CHARACTERIZATION AND ANALYTICAL TECHNIQUES; STRUCTURE OF SOLIDS AND LIQUIDS; DESIGN, SYNTHESIS AND PROCESSING
Citation Formats
Kachkanov, V., Leung, B., Song, J., Zhang, Y., Tsai, M. -C., Yuan, G., Han, J., and O'Donnell, K. P. Structural Dynamics of GaN Microcrystals in Evolutionary Selection Selective Area Growth probed by X-ray Microdiffraction. United States: N. p., 2014.
Web. doi:10.1038/srep04651.
Kachkanov, V., Leung, B., Song, J., Zhang, Y., Tsai, M. -C., Yuan, G., Han, J., & O'Donnell, K. P. Structural Dynamics of GaN Microcrystals in Evolutionary Selection Selective Area Growth probed by X-ray Microdiffraction. United States. https://doi.org/10.1038/srep04651
Kachkanov, V., Leung, B., Song, J., Zhang, Y., Tsai, M. -C., Yuan, G., Han, J., and O'Donnell, K. P. Fri .
"Structural Dynamics of GaN Microcrystals in Evolutionary Selection Selective Area Growth probed by X-ray Microdiffraction". United States. https://doi.org/10.1038/srep04651. https://www.osti.gov/servlets/purl/1624704.
@article{osti_1624704,
title = {Structural Dynamics of GaN Microcrystals in Evolutionary Selection Selective Area Growth probed by X-ray Microdiffraction},
author = {Kachkanov, V. and Leung, B. and Song, J. and Zhang, Y. and Tsai, M. -C. and Yuan, G. and Han, J. and O'Donnell, K. P.},
abstractNote = {A method to grow high quality, single crystalline semiconductor material irrespective of the substrate would allow a cost-effective improvement to functionality and performance of optoelectronic devices. Recently, a novel type of substrate-insensitive growth process called Evolutionary Selection Selective Area Growth (ES-SAG) has been proposed. Here we report the use of X-ray microdiffraction to study the structural properties of GaN microcrystals grown by ES-SAG. Utilizing high resolution in both direct and reciprocal spaces, we have unraveled structural dynamics of GaN microcrystals in growth structures of different dimensions. It has been found that the geometric proportions of the growth constrictions play an important role: 2.6 mm and 4.5 mm wide growth tunnels favor the evolutionary selection mechanism, contrary to the case of 8.6 mm growth tunnels. It was also found that GaN microcrystal ensembles are dominated by slight tensile strain irrespective of growth tunnel shape.},
doi = {10.1038/srep04651},
journal = {Scientific Reports},
number = 1,
volume = 4,
place = {United States},
year = {Fri Apr 11 00:00:00 EDT 2014},
month = {Fri Apr 11 00:00:00 EDT 2014}
}
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Works referencing / citing this record:
Strong Geometrical Effects in Submillimeter Selective Area Growth and Light Extraction of GaN Light Emitting Diodes on Sapphire
journal, November 2015
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- Scientific Reports, Vol. 5, Issue 1