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patent-application
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June 2004 |
Method of Manufacturing Vertical-Cavity Surface Emitting Laser
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March 2011 |
CW lasing of current injection blue GaN-based vertical cavity surface emitting laser
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April 2008 |
Efficiency droop in nitride-based light-emitting diodes
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journal
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July 2010 |
Light emitting device and manufacturing method thereof
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patent
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January 2013 |
Light Emitting Diodes
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August 2013 |
Near ultraviolet optically pumped vertical cavity laser
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January 2000 |
Synthesis, assembly and applications of semiconductor nanomembranes
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Substrate Modes of (Al,In)GaN Semiconductor Laser Diodes on SiC and GaN Substrates
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January 2007 |
Doping selective lateral electrochemical etching of GaN for chemical lift-off
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journal
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June 2009 |
Method for a GaN Vertical Microcavity Surface Emitting Laser (VCSEL)
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October 2015 |
Multijunction GaInN-based solar cells using a tunnel junction
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March 2014 |
FinFET method and structure with embedded underlying anti-punch through layer
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patent
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July 2013 |
Porous GaN prepared by UV assisted electrochemical etching
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February 2007 |
Mesoporous GaN for Photonic Engineering—Highly Reflective GaN Mirrors as an Example
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June 2015 |
Design and performance of asymmetric waveguide nitride laser diodes
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journal
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February 2000 |
Semiconductor Device and Method of Fabricating the Same
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November 2014 |
Vertical Cavity Surface Emitting Laser Device
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December 2008 |
Formation of Self-Organized Nanoporous Anodic Oxide from Metallic Gallium
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September 2012 |
Structural and optical characteristics of porous GaN generated by electroless chemical etching
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March 2009 |
Spontaneous polarization and piezoelectric constants of III-V nitrides
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October 1997 |
Methods of Making and Modifying Porous Devices for Biomedical Applications
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January 2007 |
High reflectance membrane-based distributed Bragg reflectors for GaN photonics
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November 2012 |
Porous Particles and Methods of Making Thereof
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November 2008 |
Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same
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September 2003 |
Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature
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June 2011 |
Light Emitting Device and Manufacturing Method Thereof
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February 2014 |
Nitride Semiconductor Wafer
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October 2010 |
A conductivity-based selective etching for next generation GaN devices
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June 2010 |
Selective Etching of Oxides to Metal Nitrides and Metal Oxides
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March 2006 |
Method for making a semiconductor substrate comprising a variant porous layer
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patent
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July 2004 |
High Efficiency LEDs with Tunnel Junctions
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August 2007 |
Defect-Free Single-Crystal SiGe: A New Material from Nanomembrane Strain Engineering
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Group III-V complex vertical cavity surface emitting laser diode and method for manufacturing the same
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patent
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October 2001 |
Method for Producing Gallium Nitride Substrates for Electronic and Optoelectronic Devices
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August 2013 |
Gap Distributed Bragg Reflectors
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February 2013 |
III-Nitride Light Emitting Device Including Porous Semiconductor Layer
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June 2009 |
Optoelectronic device and method for manufacturing the same
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patent
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August 2013 |
Porous silicon photo-device capable of photoelectric conversion
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patent
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July 1997 |
Diffusion, release, and uptake of hydrogen in magnesium-doped gallium nitride: Theory and experiment
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journal
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March 2001 |
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
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journal
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December 1989 |
High Diffuse Reflectivity of Nanoporous GaN Distributed Bragg Reflector Formed by Electrochemical Etching
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journal
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July 2013 |
Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers
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conference
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March 2013 |
Semiconductor Light Emitting Device and Fabrication Method Thereof
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February 2004 |
Optoelectronic Device and Method for Manufacturing the Same
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March 2012 |
Electrolysis transistor
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December 2008 |
Surface emitting laser and manufacturing method thereof
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April 2011 |
Optoelectronic Device and Method for Manufacturing the Same
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May 2013 |
Printed Assemblies of Ultrathin, Microscale Inorganic Light Emitting Diodes for Deformable and Semitransparent Displays
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High-Quality Non-Polar/Semi-Polar Semiconductor Device on Porous Nitride Semiconductor and Manufacturing Method Thereof
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August 2012 |
Conductivity Based on Selective Etch for GaN Devices and Applications Thereof
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January 2013 |
Vertical-Cavity Surface-Emitting Laser Diode Device
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July 2009 |
Electrical Transport Properties of p-GaN
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journal
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March 1996 |
Monolithically-Pumped Erbium-Doped Waveguide Amplifiers and Lasers
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November 2008 |
Method for Producing Group 3-5 Nitride Semiconductor and Method for Producing Light-Emitting Device
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patent-application
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May 2009 |
p ‐type conduction in Mg‐doped GaN and Al 0.08 Ga 0.92 N grown by metalorganic vapor phase epitaxy
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journal
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August 1994 |
III-Nitride Light-Emitting Devices with One or More Resonance Reflectors and Reflective Engineered Growth Templates for Such Devices, and Methods
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February 2008 |
Semiconductor Substrate and Thin-Film Semiconductive Member, and Method for Making Thereof
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October 2002 |
Series Connected Flip Chip LEDS with Growth Substrate Removed
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February 2012 |
Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection
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December 2008 |
Oxidation Kinetics and Microstructure of Wet-Oxidized MBE-Grown Short-Period AlGaAs Superlattices
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journal
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January 2001 |
Pure Blue Laser Diodes Based on Nonpolar m -Plane Gallium Nitride with InGaN Waveguiding Layers
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journal
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September 2007 |
Light Emitting Diode With Porous Sic Substrate And Method For Fabricating
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patent-application
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August 2005 |
Blue light emitting diode exceeding 100% quantum efficiency
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journal
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February 2014 |
Elimination of AlGaN epilayer cracking by spatially patterned AlN mask
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journal
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March 2006 |
Highly Efficient III-Nitride-Based Top Emission Type Light Emitting Device Having Large Area and High Capacity and Method of Manufacturing the Same
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patent-application
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February 2007 |
Vertical cavity surface emitting laser with low band gap highly doped contact layer
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patent
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October 1998 |
High Injection Efficiency Polar and Non-Polar III-Nitrides Light Emitters
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patent-application
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August 2011 |
Gallium nitride: Method of defect characterization by wet oxidation in an oxalic acid electrolytic cell
- Sundararajan, Sri Priya; Crouse, David; Lo, Yu-Hwa
-
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, Vol. 20, Issue 4
https://doi.org/10.1116/1.1488644
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journal
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July 2002 |
Current steering effect of GaN nanoporous structure
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journal
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November 2014 |
Light-Emitting Device Including Nitride-Based Semiconductor Omnidirectional Reflector
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patent-application
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September 2013 |
Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vapor Deposition
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journal
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August 2000 |
Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions
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journal
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August 2013 |
Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
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patent
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November 2001 |
Method of manufacturing a perforated workpiece
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patent
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November 1993 |
Optical Device, Surface Emitting Type Device and Method for Manufacturing the Same
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patent-application
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March 2002 |
Preparation of crystalline microporous and mesoporous metal silicates, products produced thereby and use thereof
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patent
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July 1999 |
Group III-Nitride Solar Cell with Graded Compositions
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patent-application
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July 2009 |
Surface-Emission Laser Diode and Fabrication Process Thereof
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March 2014 |
Conductivity based on selective etch for GaN devices and applications thereof
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patent
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December 2015 |
Thin and Flexible Gallium Nitride and Method of Making the Same
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patent-application
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June 2013 |
High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching
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journal
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January 2005 |
Lateral electrochemical etching of III-nitride materials for microfabrication
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patent
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February 2017 |
Structure and Method for Fabricating High Contrast Reflective Mirrors
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patent-application
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October 2002 |
Photonic Structures for Efficient Light Extraction and Conversion in Multi-Color Light Emitting Devices
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patent-application
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April 2007 |
High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates
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journal
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July 2000 |
Semiconductor Light Emitting Device Including Porous Layer
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patent-application
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December 2007 |
Low Threshold Microcavity Light Emitter
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patent-application
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October 2003 |
Method for lift-off of epitaxially grown semiconductors by electrochemical anodic etching
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patent-application
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June 2002 |
Doping method
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patent
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August 2011 |
Growth of low resistivity p-type GaN by metal organic chemical vapour deposition
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journal
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January 1997 |
Lateral Electrochemical Etching of III-Nitride Materials for Microfabrication
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patent-application
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May 2017 |
Control of Photoelectrochemical (PEC) Etching by Modification of the Local Electrochemical Potential of the Semiconductor Structure Relative to the Electrolyte
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patent-application
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May 2006 |
Photo-Enhanced Activation of Hydrogen-Passivated Magnesium in P-Type GaN Films
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journal
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August 1998 |
A Method for GaN Vertical Microcavity Surface Emitting Laser (VCSEL)
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patent-application
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August 2017 |
Vertical Cavity Surface Emitting Laser (VCSEL)
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patent-application
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June 2002 |
Vertical Structure Semiconductor Devices
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patent-application
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November 2005 |
Hole Compensation Mechanism of P-Type GaN Films
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journal
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May 1992 |
Optoelectronic Device and Method for Manufacturing the Same
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patent-application
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December 2013 |
Selective oxidation of AlInN layers for current confinement in III–nitride devices
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journal
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August 2005 |
Light-emitting element with porous light-emitting layers
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patent
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September 2007 |
Lateral Electrochemical Etching of III-Nitride Materials for Microfabrication
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patent-application
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January 2014 |
Porous Substrates, Articles, Systems And Compositions Comprising Nanofibers And Methods Of Their Use And Production
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patent-application
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June 2009 |
Ultraviolet Light Emitting Diode Devices and Methods for Fabricating the Same
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patent-application
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January 2012 |
Semiconductor device, surface emitting semiconductor laser and edge emitting semiconductor laser
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patent
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July 2003 |
InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes
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journal
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October 2014 |
Comparison between blue lasers and light-emitting diodes for future solid-state lighting Comparison between blue lasers and light-emitting diodes
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journal
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August 2013 |
Nitride Semiconductor Device
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patent-application
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July 2014 |
Stress engineering during metalorganic chemical vapor deposition of AlGaN/GaN distributed Bragg reflectors
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journal
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May 2001 |
Surface Emitting Laser Element Array
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patent-application
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August 2010 |
Optoelectronic device and method for manufacturing the same
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patent
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January 2013 |
Nitride Semiconductor Laser Diode
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patent-application
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July 2012 |
Electrically tunable fabry-perot structure utilizing a deformable multi-layer mirror and method of making the same
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patent
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July 2003 |
Method for Controlling the Structure and Surface Qualities of a Thin Film and Product Produced Thereby
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patent-application
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May 2007 |
Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD)
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patent-application
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January 2009 |
Room Temperature Lasing at Blue Wavelengths in Gallium Nitride Microcavities
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journal
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September 1999 |
Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices
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journal
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June 1999 |
Integrated photoelectrochemical cell and system having a liquid electrolyte
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patent
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July 2010 |
Detachable substrate or detachable structure and method for the production thereof
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patent-application
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February 2005 |
Forming semiconductor structures including activated acceptors in buried p-type III-V layers
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patent
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March 2003 |
Laser diode with metal-oxide upper cladding layer
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patent
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January 2006 |
Multiple quantum well semiconductor laser
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patent
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April 1996 |
Group III Nitride Semiconductor Device and Method for Manufacturing the Same, Group III Nitride Semiconductor Light-Emitting Device and Method for Manufacturing the Same, and Lamp
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patent-application
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May 2011 |
Nitride Semiconductor Laser
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September 2010 |
Nitride Semiconductor Light Emitting Device and Method for Fabricating the Same
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patent-application
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July 2008 |
Semiconductor Materials and Devices
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patent-application
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March 2008 |
Shape transformation of nanoporous GaN by annealing: From buried cavities to nanomembranes
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journal
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June 2011 |
Wafer Bonding of Thinned Electronic Materials and Circuits to High Performance Substrate
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patent-application
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September 2006 |
Nitride Based Semiconductor Having Improved External Quantum Efficiency and Fabrication Method Thereof
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patent-application
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October 2005 |
Nanopores in GaN by electrochemical anodization in hydrofluoric acid: Formation and mechanism
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journal
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September 2012 |
Optoelectronic Device and Method for Manufacturing the Same
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patent-application
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December 2013 |
A Method and Device Concerning III-Nitride Edge Emitting Laser Diode of High Confinement Factor with Lattice Matched Cladding Layer
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May 2018 |
Si/Ge Junctions Formed by Nanomembrane Bonding
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journal
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February 2011 |
Method to make buried, highly conductive p-type III-nitride layers
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patent-application
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July 2016 |
High-power blue laser diodes with indium tin oxide cladding on semipolar(202¯1¯) GaN substrates
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journal
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March 2015 |
Method for separating semiconductor devices using nanoporous structure
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patent
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May 2016 |
Reactivation of Mg acceptor in Mg-doped GaN by nitrogen plasma treatment
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journal
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May 2000 |
Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure
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patent
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July 2010 |
Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green
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journal
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January 2009 |
Observations of Macroporous Gallium Nitride Electrochemically Etched from High Doped Single Crystal Wafers in HF Based Electrolytes
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journal
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January 2013 |
Optoelectronic device and method for manufacturing the same
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patent
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August 2013 |