Conductivity based on selective etch for GaN devices and applications thereof
Patent
·
OSTI ID:1228370
This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.
- Research Organization:
- Yale University, New Haven, CT (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FC26-07NT43227
- Assignee:
- Yale University
- Patent Number(s):
- 9,206,524
- Application Number:
- 13/559,199
- OSTI ID:
- 1228370
- Country of Publication:
- United States
- Language:
- English
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