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Title: Nanoscale selective growth and microstructural control of indium nitride (InN)

Abstract

Selective area growth (SAG) is a phenomenon in thin film deposition where the sample surface is masked by a dielectric or refractory layer such that growth takes place only in the exposed window regions. As the opening window is pushed to nano-scale, it becomes possible to confine and control epitaxial evolution with lithographically engineered geometry with a feature size comparable to that ofa single nucleus. Two fundamental questions in nano-scale SAG are studied. The first one is how does nano-scale constriction in one direction impact the microstructure evolution in the other orthogonal directions. The other question is how does the presence of nano-scale geometric boundaries affect the crystallographic orientation in selective area epitaxy? InN is chosen as a case study to demonstrate the efficacy and unveil the science in nano-scale SAG. For the first time, we achieve uniform InN nanowires in the large scale with nano-trenches. The engineering of InN nuclei with interfacial energy and the possibility of orientation filtering are also studied.

Authors:
Publication Date:
Research Org.:
Yale Univ., New Haven, CT (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1529605
Report Number(s):
DOE-YALE-SC0001134
DOE Contract Number:  
SC0001134
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; selective area growth, graphoepitaxy, InN, nanoscale patterning

Citation Formats

Han, Jung. Nanoscale selective growth and microstructural control of indium nitride (InN). United States: N. p., 2019. Web. doi:10.2172/1529605.
Han, Jung. Nanoscale selective growth and microstructural control of indium nitride (InN). United States. doi:10.2172/1529605.
Han, Jung. Thu . "Nanoscale selective growth and microstructural control of indium nitride (InN)". United States. doi:10.2172/1529605. https://www.osti.gov/servlets/purl/1529605.
@article{osti_1529605,
title = {Nanoscale selective growth and microstructural control of indium nitride (InN)},
author = {Han, Jung},
abstractNote = {Selective area growth (SAG) is a phenomenon in thin film deposition where the sample surface is masked by a dielectric or refractory layer such that growth takes place only in the exposed window regions. As the opening window is pushed to nano-scale, it becomes possible to confine and control epitaxial evolution with lithographically engineered geometry with a feature size comparable to that ofa single nucleus. Two fundamental questions in nano-scale SAG are studied. The first one is how does nano-scale constriction in one direction impact the microstructure evolution in the other orthogonal directions. The other question is how does the presence of nano-scale geometric boundaries affect the crystallographic orientation in selective area epitaxy? InN is chosen as a case study to demonstrate the efficacy and unveil the science in nano-scale SAG. For the first time, we achieve uniform InN nanowires in the large scale with nano-trenches. The engineering of InN nuclei with interfacial energy and the possibility of orientation filtering are also studied.},
doi = {10.2172/1529605},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {6}
}