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Title: Study of narrow negative magnetoresistance effect in ultra-high mobility GaAs/AlGaAs 2DES under microwave photo-excitation

Abstract

The microwave-induced change in the narrow negative magneto-resistance effect that appears around zero magnetic field in high mobility GaAs/AlGaAs 2DES (≈107 cm2/Vs) is experimentally examined as a function of incident microwave power at a fixed bath temperature. The experimental results indicate that the narrow negative magneto-resistance effect exhibits substantially increased broadening with increasing microwave intensity. These magneto-resistance data were subjected to lineshape fits to extract possible variation of characteristic lengths with microwave intensity; the results suggest that characteristic lengths decrease by up to 50% upon increasing microwave power up to about 8 mW. We also examine the change in effective electron temperature, Te, due to the photo-excitation in the absence of a magnetic field. Combining these results suggests a correlation between electron heating and the observed change in the fit extracted characteristic lengths.

Authors:
ORCiD logo [1];  [2];  [2];  [2]; ORCiD logo [2];  [3];  [3];  [2]
  1. Georgia State Univ., Atlanta, GA (United States). Dept. of Physics and Astronomy; Uva Wellassa Univ., Badulla (Sri Lanka). Dept. of Science and Technology
  2. Georgia State Univ., Atlanta, GA (United States). Dept. of Physics and Astronomy
  3. ETH Zurich (Switzerland). Laboratorium für Festkörperphysik
Publication Date:
Research Org.:
Georgia State Univ., Atlanta, GA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; US Army Research Office (ARO); National Science Foundation (NSF)
OSTI Identifier:
1624522
Grant/Contract Number:  
SC0001762
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 10; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Condensed-matter physics; Physics

Citation Formats

Samaraweera, R. L., Gunawardana, B., Nanayakkara, T. R., Munasinghe, R. C., Kriisa, A., Reichl, C., Wegscheider, W., and Mani, R. G. Study of narrow negative magnetoresistance effect in ultra-high mobility GaAs/AlGaAs 2DES under microwave photo-excitation. United States: N. p., 2020. Web. doi:10.1038/s41598-019-57331-9.
Samaraweera, R. L., Gunawardana, B., Nanayakkara, T. R., Munasinghe, R. C., Kriisa, A., Reichl, C., Wegscheider, W., & Mani, R. G. Study of narrow negative magnetoresistance effect in ultra-high mobility GaAs/AlGaAs 2DES under microwave photo-excitation. United States. https://doi.org/10.1038/s41598-019-57331-9
Samaraweera, R. L., Gunawardana, B., Nanayakkara, T. R., Munasinghe, R. C., Kriisa, A., Reichl, C., Wegscheider, W., and Mani, R. G. Tue . "Study of narrow negative magnetoresistance effect in ultra-high mobility GaAs/AlGaAs 2DES under microwave photo-excitation". United States. https://doi.org/10.1038/s41598-019-57331-9. https://www.osti.gov/servlets/purl/1624522.
@article{osti_1624522,
title = {Study of narrow negative magnetoresistance effect in ultra-high mobility GaAs/AlGaAs 2DES under microwave photo-excitation},
author = {Samaraweera, R. L. and Gunawardana, B. and Nanayakkara, T. R. and Munasinghe, R. C. and Kriisa, A. and Reichl, C. and Wegscheider, W. and Mani, R. G.},
abstractNote = {The microwave-induced change in the narrow negative magneto-resistance effect that appears around zero magnetic field in high mobility GaAs/AlGaAs 2DES (≈107 cm2/Vs) is experimentally examined as a function of incident microwave power at a fixed bath temperature. The experimental results indicate that the narrow negative magneto-resistance effect exhibits substantially increased broadening with increasing microwave intensity. These magneto-resistance data were subjected to lineshape fits to extract possible variation of characteristic lengths with microwave intensity; the results suggest that characteristic lengths decrease by up to 50% upon increasing microwave power up to about 8 mW. We also examine the change in effective electron temperature, Te, due to the photo-excitation in the absence of a magnetic field. Combining these results suggests a correlation between electron heating and the observed change in the fit extracted characteristic lengths.},
doi = {10.1038/s41598-019-57331-9},
journal = {Scientific Reports},
number = 1,
volume = 10,
place = {United States},
year = {Tue Jan 21 00:00:00 EST 2020},
month = {Tue Jan 21 00:00:00 EST 2020}
}

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Cited by: 3 works
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Figures / Tables:

Figure 1 Figure 1: This figure shows the experimental data i.e. Rxx vs B, over the magnetic field range of 0 ≤ B ≤ 0.045 Tesla. Photo-excited Rxx data are shown at microwave frequency, f = 48.5 GHz for (a) the higher mobility sample measured at 1.60 K and (b) the lower mobility samplemore » at 1.55 K bath temperature. The vertical arrows indicate the direction of increasing power from 0 mW to ≈12 mW. Lines with symbols in (a and b) exhibit the corresponding dark curves.« less

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Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.