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Title: Coherent backscattering in quasi-ballistic ultra-high mobility GaAs/AlGaAs 2DES

Abstract

A small and narrow negative-magnetoresistance (MR) effect that appears about null magnetic field over the interval -0.025 ≤ B ≤ 0.025 T in magnetotransport studies of the GaAs/AlGaAs 2D system with μ ≈ 107cm2/Vs is experimentally examined as a function of the sample temperature, T. The temperature dependent magnetoresistance data were fit using the Hikami et al. theory, without including the spin-orbit correction, to extract the inelastic length, li, which decreases rapidly with increasing temperature. It turns out that li < le, where le is the elastic length, for all T. Thus, we measured the single particle lifetime, τs, and the single particle mean free path ls = vFτs. A comparison between li and ls indicates that li > ls. The results suggest that the observed small and narrow magnetoresistance effect about null magnetic field could be a manifestation of coherent backscattering due to small angle scattering from remote ionized donors in the high mobility GaAs/AlGaAs 2DES.

Authors:
ORCiD logo [1];  [1];  [1]; ORCiD logo [1];  [2];  [2];  [1]
  1. Georgia State Univ., Atlanta, GA (United States). Dept. of Physics and Astronomy
  2. Swiss Federal Inst. of Technology in Zurich (ETH Zurich) (Switzerland). Lab. of Solid State Physics
Publication Date:
Research Org.:
Georgia State Univ., Atlanta, GA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); US Army Research Office (ARO); National Science Foundation (NSF)
OSTI Identifier:
1457480
Alternate Identifier(s):
OSTI ID: 1499996
Grant/Contract Number:  
SC0001762; W911NF-14-2-0076; W911NF-15-1-0433; ECCS1701302
Resource Type:
Published Article
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 8; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; magnetic properties and materials; two-dimensional materials

Citation Formats

Samaraweera, R. L., Liu, H. -C., Gunawardana, B., Kriisa, A., Reichl, C., Wegscheider, W., and Mani, R. G. Coherent backscattering in quasi-ballistic ultra-high mobility GaAs/AlGaAs 2DES. United States: N. p., 2018. Web. doi:10.1038/s41598-018-28359-0.
Samaraweera, R. L., Liu, H. -C., Gunawardana, B., Kriisa, A., Reichl, C., Wegscheider, W., & Mani, R. G. Coherent backscattering in quasi-ballistic ultra-high mobility GaAs/AlGaAs 2DES. United States. https://doi.org/10.1038/s41598-018-28359-0
Samaraweera, R. L., Liu, H. -C., Gunawardana, B., Kriisa, A., Reichl, C., Wegscheider, W., and Mani, R. G. Tue . "Coherent backscattering in quasi-ballistic ultra-high mobility GaAs/AlGaAs 2DES". United States. https://doi.org/10.1038/s41598-018-28359-0.
@article{osti_1457480,
title = {Coherent backscattering in quasi-ballistic ultra-high mobility GaAs/AlGaAs 2DES},
author = {Samaraweera, R. L. and Liu, H. -C. and Gunawardana, B. and Kriisa, A. and Reichl, C. and Wegscheider, W. and Mani, R. G.},
abstractNote = {A small and narrow negative-magnetoresistance (MR) effect that appears about null magnetic field over the interval -0.025 ≤ B ≤ 0.025 T in magnetotransport studies of the GaAs/AlGaAs 2D system with μ ≈ 107cm2/Vs is experimentally examined as a function of the sample temperature, T. The temperature dependent magnetoresistance data were fit using the Hikami et al. theory, without including the spin-orbit correction, to extract the inelastic length, li, which decreases rapidly with increasing temperature. It turns out that li < le, where le is the elastic length, for all T. Thus, we measured the single particle lifetime, τs, and the single particle mean free path ls = vFτs. A comparison between li and ls indicates that li > ls. The results suggest that the observed small and narrow magnetoresistance effect about null magnetic field could be a manifestation of coherent backscattering due to small angle scattering from remote ionized donors in the high mobility GaAs/AlGaAs 2DES.},
doi = {10.1038/s41598-018-28359-0},
journal = {Scientific Reports},
number = ,
volume = 8,
place = {United States},
year = {2018},
month = {7}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1038/s41598-018-28359-0

Citation Metrics:
Cited by: 12 works
Citation information provided by
Web of Science

Figures / Tables:

Figure 1 Figure 1: Radiation induced magnetoresistance oscillations in Rxx in a GaAs/AlGaAs heterostructure 2D electron system. Rxx is exhibited vs. the magnetic field, B, for dark (Black-curve) and with microwave excitation at f = 70 GHz and P = 0.77 mW (Red-curve). The inset shows the enlarged view of the weakmore » localization-like effect.« less

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Linear polarization sensitivity of magnetotransport in irradiated two-dimensional electron systems
journal, May 2013

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journal, October 1978

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text, January 2014


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text, January 2013


Microwave-induced resistance oscillations as a classical memory effect
text, January 2016


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text, January 2002


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Works referencing / citing this record:

Influence of Microwave Excitation‐Power on the Narrow Negative Magnetoresistance Effect Around B  = 0 T in the Ultra‐High Mobility GaAs/AlGaAs 2DES
journal, February 2019

  • Samaraweera, Rasanga L.; Gunawardana, Binuka; Kriisa, Annika
  • physica status solidi (b), Vol. 256, Issue 6
  • DOI: 10.1002/pssb.201800610

Cyclotron resonance in the high mobility GaAs/AlGaAs 2D electron system over the microwave, mm-wave, and terahertz- bands
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Radiation-induced magnetoresistance oscillations in monolayer and bilayer graphene
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Study of narrow negative magnetoresistance effect in ultra-high mobility GaAs/AlGaAs 2DES under microwave photo-excitation
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Simultaneous magneto-electro-optical measurements in modulation-doped quantum well: An investigation on magneto-photoluminescence intensity oscillations
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Cyclotron resonance in the high mobility GaAs/AlGaAs 2D electron system over the microwave, mm-wave, and terahertz- bands
text, January 2019


Study of narrow negative magnetoresistance effect in ultra-high mobility GaAs/AlGaAs 2DES under microwave photo-excitation
text, January 2020


Cyclotron resonance in the high mobility GaAs/AlGaAs 2D electron system over the microwave, mm-wave, and terahertz- bands
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Radiation-induced magnetoresistance oscillations in monolayer and bilayer graphene
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Photon-Assisted Perfect Conductivity Between Arrays of Two-Level Atoms
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Study of narrow negative magnetoresistance effect in ultra-high mobility GaAs/AlGaAs 2DES under microwave photo-excitation
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