Coherent backscattering in quasi-ballistic ultra-high mobility GaAs/AlGaAs 2DES

Samaraweera, R. L.; Liu, H. -C.; Gunawardana, B.; Kriisa, A.; Reichl, C.; Wegscheider, W.; Mani, R. G.

doi:10.1038/s41598-018-28359-0

Title: Coherent backscattering in quasi-ballistic ultra-high mobility GaAs/AlGaAs 2DES

Journal Article · 03 July 2018 · Scientific Reports

DOI: https://doi.org/10.1038/s41598-018-28359-0 · OSTI ID:1457480

; Liu, H. -C.; Gunawardana, B.;

; Reichl, C.; Wegscheider, W.; Mani, R. G.

Abstract A small and narrow negative-magnetoresistance (MR) effect that appears about null magnetic field over the interval −0.025 ≤ B ≤ 0.025 T in magnetotransport studies of the GaAs/AlGaAs 2D system with μ ≈ 10 ⁷ cm ² / Vs is experimentally examined as a function of the sample temperature, T . The temperature dependent magnetoresistance data were fit using the Hikami et al . theory, without including the spin-orbit correction, to extract the inelastic length, l _i , which decreases rapidly with increasing temperature. It turns out that l _i < l _e , where l _e is the elastic length, for all T . Thus, we measured the single particle lifetime, τ _s , and the single particle mean free path l _s = v _F τ _s . A comparison between l _i and l _s indicates that l _i > l _s . The results suggest that the observed small and narrow magnetoresistance effect about null magnetic field could be a manifestation of coherent backscattering due to small angle scattering from remote ionized donors in the high mobility GaAs/AlGaAs 2DES.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: SC0001762

OSTI ID:: 1457480

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 8; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United Kingdom

Language:: English

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