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Title: Coherent backscattering in quasi-ballistic ultra-high mobility GaAs/AlGaAs 2DES

Abstract

A small and narrow negative-magnetoresistance (MR) effect that appears about null magnetic field over the interval -0.025 ≤ B ≤ 0.025 T in magnetotransport studies of the GaAs/AlGaAs 2D system with μ ≈ 10 7cm 2/Vs is experimentally examined as a function of the sample temperature, T. The temperature dependent magnetoresistance data were fit using the Hikami et al. theory, without including the spin-orbit correction, to extract the inelastic length, l i, which decreases rapidly with increasing temperature. It turns out that l i < l e, where l e is the elastic length, for all T. Thus, we measured the single particle lifetime, τ s, and the single particle mean free path l s = v Fτ s. A comparison between l i and l s indicates that l i > l s. The results suggest that the observed small and narrow magnetoresistance effect about null magnetic field could be a manifestation of coherent backscattering due to small angle scattering from remote ionized donors in the high mobility GaAs/AlGaAs 2DES.

Authors:
ORCiD logo; ; ; ORCiD logo; ; ;
Publication Date:
Research Org.:
Georgia State Univ., Atlanta, GA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); US Army Research Office (ARO); National Science Foundation (NSF)
OSTI Identifier:
1457480
Alternate Identifier(s):
OSTI ID: 1499996
Grant/Contract Number:  
SC0001762; W911NF-14-2-0076; W911NF-15-1-0433; ECCS1701302
Resource Type:
Published Article
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Name: Scientific Reports Journal Volume: 8 Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United Kingdom
Language:
English
Subject:
36 MATERIALS SCIENCE; magnetic properties and materials; two-dimensional materials

Citation Formats

Samaraweera, R. L., Liu, H. -C., Gunawardana, B., Kriisa, A., Reichl, C., Wegscheider, W., and Mani, R. G. Coherent backscattering in quasi-ballistic ultra-high mobility GaAs/AlGaAs 2DES. United Kingdom: N. p., 2018. Web. doi:10.1038/s41598-018-28359-0.
Samaraweera, R. L., Liu, H. -C., Gunawardana, B., Kriisa, A., Reichl, C., Wegscheider, W., & Mani, R. G. Coherent backscattering in quasi-ballistic ultra-high mobility GaAs/AlGaAs 2DES. United Kingdom. doi:10.1038/s41598-018-28359-0.
Samaraweera, R. L., Liu, H. -C., Gunawardana, B., Kriisa, A., Reichl, C., Wegscheider, W., and Mani, R. G. Tue . "Coherent backscattering in quasi-ballistic ultra-high mobility GaAs/AlGaAs 2DES". United Kingdom. doi:10.1038/s41598-018-28359-0.
@article{osti_1457480,
title = {Coherent backscattering in quasi-ballistic ultra-high mobility GaAs/AlGaAs 2DES},
author = {Samaraweera, R. L. and Liu, H. -C. and Gunawardana, B. and Kriisa, A. and Reichl, C. and Wegscheider, W. and Mani, R. G.},
abstractNote = {A small and narrow negative-magnetoresistance (MR) effect that appears about null magnetic field over the interval -0.025 ≤ B ≤ 0.025 T in magnetotransport studies of the GaAs/AlGaAs 2D system with μ ≈ 107cm2/Vs is experimentally examined as a function of the sample temperature, T. The temperature dependent magnetoresistance data were fit using the Hikami et al. theory, without including the spin-orbit correction, to extract the inelastic length, li, which decreases rapidly with increasing temperature. It turns out that li < le, where le is the elastic length, for all T. Thus, we measured the single particle lifetime, τs, and the single particle mean free path ls = vFτs. A comparison between li and ls indicates that li > ls. The results suggest that the observed small and narrow magnetoresistance effect about null magnetic field could be a manifestation of coherent backscattering due to small angle scattering from remote ionized donors in the high mobility GaAs/AlGaAs 2DES.},
doi = {10.1038/s41598-018-28359-0},
journal = {Scientific Reports},
number = 1,
volume = 8,
place = {United Kingdom},
year = {2018},
month = {7}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1038/s41598-018-28359-0

Citation Metrics:
Cited by: 7 works
Citation information provided by
Web of Science

Figures / Tables:

Figure 1 Figure 1: Radiation induced magnetoresistance oscillations in Rxx in a GaAs/AlGaAs heterostructure 2D electron system. Rxx is exhibited vs. the magnetic field, B, for dark (Black-curve) and with microwave excitation at f = 70 GHz and P = 0.77 mW (Red-curve). The inset shows the enlarged view of the weakmore » localization-like effect.« less

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    Works referencing / citing this record:

    Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs heterostructures
    journal, December 2002

    • Mani, Ramesh G.; Smet, Jürgen H.; von Klitzing, Klaus
    • Nature, Vol. 420, Issue 6916
    • DOI: 10.1038/nature01277

    Dressed Photons Induced Resistance Oscillation and Zero Resistance in Arrayed Simple Harmonic Oscillators with No Impurity
    journal, November 2016

    • Chang, Chih-Chun; Chen, Guang-Yin; Lin, Lee
    • Scientific Reports, Vol. 6, Issue 1
    • DOI: 10.1038/srep37763

    An incompressible state of a photo-excited electron gas
    journal, May 2015

    • Chepelianskii, Alexei D.; Watanabe, Masamitsu; Nasyedkin, Kostyantyn
    • Nature Communications, Vol. 6, Issue 1
    • DOI: 10.1038/ncomms8210

    Weak localisation and electron-electron interactions in modulation-doped GaAs/AlGaAs heterostructures
    journal, September 1990


    Weak localization in the narrow gap bulk semiconductors Hg1-xCdxTe and InSb
    journal, August 1991


    Weak localization and size effects in thin In 2 O 3 films prepared by autowave oxidation
    journal, October 2016

    • Tambasov, Igor A.; Tarasov, Anton S.; Volochaev, Mikhail N.
    • Physica E: Low-dimensional Systems and Nanostructures, Vol. 84
    • DOI: 10.1016/j.physe.2016.06.005

    Observation of a node in the quantum oscillations induced by microwave radiation
    journal, May 2004

    • Kovalev, Alexey E.; Zvyagin, Sergey A.; Bowers, Clifford R.
    • Solid State Communications, Vol. 130, Issue 6
    • DOI: 10.1016/j.ssc.2004.02.028

    Logarithmic corrections to two-dimensional transport in silicon inversion layers
    journal, December 1981


    Influence of linearly polarized radiation on magnetoresistance in irradiated two-dimensional electron systems
    journal, June 2012

    • Iñarrea, Jesús
    • Applied Physics Letters, Vol. 100, Issue 24
    • DOI: 10.1063/1.4729299

    Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
    journal, October 1978

    • Dingle, R.; Störmer, H. L.; Gossard, A. C.
    • Applied Physics Letters, Vol. 33, Issue 7
    • DOI: 10.1063/1.90457

    Photo-excited zero-resistance states in quasi-two-dimensional GaAs / AlxGa1−xAs devices
    journal, December 2007


    Weak localization effects in GaAs doping superlattices
    journal, July 1984


    Weak localization in thin films
    journal, May 1984


    Tunable electron heating induced giant magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system
    journal, December 2016

    • Wang, Zhuo; Samaraweera, R. L.; Reichl, C.
    • Scientific Reports, Vol. 6, Issue 1
    • DOI: 10.1038/srep38516

    Observation of resistively detected hole spin resonance and zero-field pseudo-spin splitting in epitaxial graphene
    journal, January 2012

    • Mani, Ramesh G.; Hankinson, John; Berger, Claire
    • Nature Communications, Vol. 3, Issue 1
    • DOI: 10.1038/ncomms1986

    The observation of localisation and interaction effects in the two-dimensional electron gas of a GaAs-GaAlAs heterojunction at low temperatures
    journal, November 1981


    Theoretical model for negative giant magnetoresistance in ultrahigh-mobility 2D electron systems
    journal, May 2014


    Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs Heterostructures
    journal, April 2004


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    journal, August 1997

    • Umansky, V.; de-Picciotto, R.; Heiblum, M.
    • Applied Physics Letters, Vol. 71, Issue 5
    • DOI: 10.1063/1.119829

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    • Iñarrea, Jesús
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    • DOI: 10.1063/1.4805046

    Low-temperature conductivity and weak-localization effect in barely metallic GaAs
    journal, April 1993


    Radiation-induced zero-resistance states with resolved Landau levels
    journal, November 2004


      Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.