Size-dependent giant-magnetoresistance in millimeter scale GaAs/AlGaAs 2D electron devices
Abstract
Large changes in the electrical resistance induced by the application of a small magnetic field are potentially useful for device-applications. Such Giant Magneto-Resistance (GMR) effects also provide new insights into the physical phenomena involved in the associated electronic transport. This study examines a ‘‘bell-shape’’ negative GMR that grows in magnitude with decreasing temperatures in mm-wide devices fabricated from the high-mobility GaAs/AlGaAs 2-Dimensional Electron System (2DES). Experiments show that the span of this magnetoresistance on the magnetic-field-axis increases with decreasing device width, W, while there is no concurrent Hall resistance, Rxy, correction. A multi-conduction model, including negative diagonal conductivity, and non-vanishing off-diagonal conductivity, reproduces experimental observations. The results suggest that a size effect in the mm-wide 2DES with mm-scale electron mean-free-paths is responsible for the observed ‘‘non-ohmic’’ size-dependent negative GMR.
- Authors:
-
- Georgia State Univ., Atlanta, GA (United States). Dept. of Physics and Astronomy
- Emory Univ., Atlanta, GA (United States). Dept. of Physics
- Eidgenoessische Technische Hochschule, Zurich (Switzerland). Lab. for Feskorperphysik
- Publication Date:
- Research Org.:
- Georgia State Univ., Atlanta, GA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1624653
- Grant/Contract Number:
- SC0001762
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Volume: 3; Journal Issue: 1; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 79 ASTRONOMY AND ASTROPHYSICS; Science & Technology - Other Topics; ELECTRONIC PROPERTIES AND MATERIALS; ELECTRONIC AND SPINTRONIC DEVICES; TWO-DIMENSIONAL MATERIALS; QUANTUM HALL
Citation Formats
Mani, R. G., Kriisa, A., and Wegscheider, W. Size-dependent giant-magnetoresistance in millimeter scale GaAs/AlGaAs 2D electron devices. United States: N. p., 2013.
Web. doi:10.1038/srep02747.
Mani, R. G., Kriisa, A., & Wegscheider, W. Size-dependent giant-magnetoresistance in millimeter scale GaAs/AlGaAs 2D electron devices. United States. https://doi.org/10.1038/srep02747
Mani, R. G., Kriisa, A., and Wegscheider, W. Wed .
"Size-dependent giant-magnetoresistance in millimeter scale GaAs/AlGaAs 2D electron devices". United States. https://doi.org/10.1038/srep02747. https://www.osti.gov/servlets/purl/1624653.
@article{osti_1624653,
title = {Size-dependent giant-magnetoresistance in millimeter scale GaAs/AlGaAs 2D electron devices},
author = {Mani, R. G. and Kriisa, A. and Wegscheider, W.},
abstractNote = {Large changes in the electrical resistance induced by the application of a small magnetic field are potentially useful for device-applications. Such Giant Magneto-Resistance (GMR) effects also provide new insights into the physical phenomena involved in the associated electronic transport. This study examines a ‘‘bell-shape’’ negative GMR that grows in magnitude with decreasing temperatures in mm-wide devices fabricated from the high-mobility GaAs/AlGaAs 2-Dimensional Electron System (2DES). Experiments show that the span of this magnetoresistance on the magnetic-field-axis increases with decreasing device width, W, while there is no concurrent Hall resistance, Rxy, correction. A multi-conduction model, including negative diagonal conductivity, and non-vanishing off-diagonal conductivity, reproduces experimental observations. The results suggest that a size effect in the mm-wide 2DES with mm-scale electron mean-free-paths is responsible for the observed ‘‘non-ohmic’’ size-dependent negative GMR.},
doi = {10.1038/srep02747},
journal = {Scientific Reports},
number = 1,
volume = 3,
place = {United States},
year = {Wed Sep 25 00:00:00 EDT 2013},
month = {Wed Sep 25 00:00:00 EDT 2013}
}
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