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Title: GaN/InGaN Blue Light-Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam-Assisted Deposition

Abstract

Light-emitting diode (LED) arrays fabricated on a polycrystalline metal substrate are demonstrated using a novel technique that enables the growth of epitaxial metal-organic chemical vapor deposition (MOCVD) GaN layers on non-single-crystal substrates. Epitaxial GaN is deposited directly on metal foil using an intermediate ion beam-assisted deposition (IBAD) aligned layer. For a single 170 μm-diameter LED on the metal foil, electroluminescence (EL) spectrum shows a peak wavelength of ≈452 nm and a full width at half maximum (FWHM) of ≈24 nm. The current–voltage (I –V ) characteristics show a turn-on voltage of 3.7 V, a series resistance of 10 Ω. LEDs on metal show a relative external quantum efficiency (EQE) that is roughly 3× lower than that of similar LEDs fabricated on a sapphire substrate. Finally, InGaN LEDs on large-area non-single-crystal substrates such as metal foils enable large-area manufacturing, reducing production cost, and opening the door for new applications in lighting and displays.

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [1];  [1];  [2];  [3];  [3]
  1. Univ. of New Mexico, Albuquerque, NM (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. iBeam Materials, Santa Fe, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1618075
Alternate Identifier(s):
OSTI ID: 1596390
Report Number(s):
SAND-2020-0090J
Journal ID: ISSN 1862-6300; 681940
Grant/Contract Number:  
AC04-94AL85000; AR0000447; 89233218CNA000001; NA0003525
Resource Type:
Accepted Manuscript
Journal Name:
Physica Status Solidi. A, Applications and Materials Science
Additional Journal Information:
Journal Volume: 217; Journal Issue: 7; Journal ID: ISSN 1862-6300
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GaN; InGaN; LEDs; metal foils; III-nitrides

Citation Formats

Tarief Elshafiey, Abdelrahman, DaVico, Kenneth M., Rishinaramangalam, Ashwin K., Rashidi, Arman, Aragon, Andrew, Feezell, Daniel, Gunning, Brendan P., Sheehan, Christopher, and Matias, Vladimir. GaN/InGaN Blue Light-Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam-Assisted Deposition. United States: N. p., 2020. Web. https://doi.org/10.1002/pssa.201900800.
Tarief Elshafiey, Abdelrahman, DaVico, Kenneth M., Rishinaramangalam, Ashwin K., Rashidi, Arman, Aragon, Andrew, Feezell, Daniel, Gunning, Brendan P., Sheehan, Christopher, & Matias, Vladimir. GaN/InGaN Blue Light-Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam-Assisted Deposition. United States. https://doi.org/10.1002/pssa.201900800
Tarief Elshafiey, Abdelrahman, DaVico, Kenneth M., Rishinaramangalam, Ashwin K., Rashidi, Arman, Aragon, Andrew, Feezell, Daniel, Gunning, Brendan P., Sheehan, Christopher, and Matias, Vladimir. Fri . "GaN/InGaN Blue Light-Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam-Assisted Deposition". United States. https://doi.org/10.1002/pssa.201900800. https://www.osti.gov/servlets/purl/1618075.
@article{osti_1618075,
title = {GaN/InGaN Blue Light-Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam-Assisted Deposition},
author = {Tarief Elshafiey, Abdelrahman and DaVico, Kenneth M. and Rishinaramangalam, Ashwin K. and Rashidi, Arman and Aragon, Andrew and Feezell, Daniel and Gunning, Brendan P. and Sheehan, Christopher and Matias, Vladimir},
abstractNote = {Light-emitting diode (LED) arrays fabricated on a polycrystalline metal substrate are demonstrated using a novel technique that enables the growth of epitaxial metal-organic chemical vapor deposition (MOCVD) GaN layers on non-single-crystal substrates. Epitaxial GaN is deposited directly on metal foil using an intermediate ion beam-assisted deposition (IBAD) aligned layer. For a single 170 μm-diameter LED on the metal foil, electroluminescence (EL) spectrum shows a peak wavelength of ≈452 nm and a full width at half maximum (FWHM) of ≈24 nm. The current–voltage (I –V ) characteristics show a turn-on voltage of 3.7 V, a series resistance of 10 Ω. LEDs on metal show a relative external quantum efficiency (EQE) that is roughly 3× lower than that of similar LEDs fabricated on a sapphire substrate. Finally, InGaN LEDs on large-area non-single-crystal substrates such as metal foils enable large-area manufacturing, reducing production cost, and opening the door for new applications in lighting and displays.},
doi = {10.1002/pssa.201900800},
journal = {Physica Status Solidi. A, Applications and Materials Science},
number = 7,
volume = 217,
place = {United States},
year = {2020},
month = {1}
}

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