GaN/InGaN Blue Light-Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam-Assisted Deposition

Tarief Elshafiey, Abdelrahman; DaVico, Kenneth M.; Rishinaramangalam, Ashwin K.; Rashidi, Arman; Aragon, Andrew; Feezell, Daniel; Gunning, Brendan P.; Sheehan, Christopher; Matias, Vladimir

doi:10.1002/pssa.201900800

Title: GaN/InGaN Blue Light-Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam-Assisted Deposition

Abstract

Light-emitting diode (LED) arrays fabricated on a polycrystalline metal substrate are demonstrated using a novel technique that enables the growth of epitaxial metal-organic chemical vapor deposition (MOCVD) GaN layers on non-single-crystal substrates. Epitaxial GaN is deposited directly on metal foil using an intermediate ion beam-assisted deposition (IBAD) aligned layer. For a single 170 μm-diameter LED on the metal foil, electroluminescence (EL) spectrum shows a peak wavelength of ≈452 nm and a full width at half maximum (FWHM) of ≈24 nm. The current–voltage (I –V ) characteristics show a turn-on voltage of 3.7 V, a series resistance of 10 Ω. LEDs on metal show a relative external quantum efficiency (EQE) that is roughly 3× lower than that of similar LEDs fabricated on a sapphire substrate. Finally, InGaN LEDs on large-area non-single-crystal substrates such as metal foils enable large-area manufacturing, reducing production cost, and opening the door for new applications in lighting and displays.

Authors:

^[1]; DaVico, Kenneth M. ^[1]; Rishinaramangalam, Ashwin K. ^[1]; Rashidi, Arman ^[1]; Aragon, Andrew ^[1]; Feezell, Daniel ^[1]; Gunning, Brendan P. ^[2]; Sheehan, Christopher ^[3]; Matias, Vladimir ^[3]

Univ. of New Mexico, Albuquerque, NM (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
iBeam Materials, Santa Fe, NM (United States)

Publication Date:: Fri Jan 31 00:00:00 EST 2020

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1618075

Alternate Identifier(s):: OSTI ID: 1596390

Report Number(s):: SAND-2020-0090J
Journal ID: ISSN 1862-6300; 681940

Grant/Contract Number:: AC04-94AL85000; AR0000447; 89233218CNA000001; NA0003525

Resource Type:: Accepted Manuscript

Journal Name:: Physica Status Solidi. A, Applications and Materials Science

Additional Journal Information:: Journal Volume: 217; Journal Issue: 7; Journal ID: ISSN 1862-6300

Publisher:: Wiley

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; GaN; InGaN; LEDs; metal foils; III-nitrides

Citation Formats


                    Tarief Elshafiey, Abdelrahman, DaVico, Kenneth M., Rishinaramangalam, Ashwin K., Rashidi, Arman, Aragon, Andrew, Feezell, Daniel, Gunning, Brendan P., Sheehan, Christopher, and Matias, Vladimir. GaN/InGaN Blue Light-Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam-Assisted Deposition.  United States: N. p., 2020. 
Web.  doi:10.1002/pssa.201900800.

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                    Tarief Elshafiey, Abdelrahman, DaVico, Kenneth M., Rishinaramangalam, Ashwin K., Rashidi, Arman, Aragon, Andrew, Feezell, Daniel, Gunning, Brendan P., Sheehan, Christopher, & Matias, Vladimir. GaN/InGaN Blue Light-Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam-Assisted Deposition.  United States.  https://doi.org/10.1002/pssa.201900800

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                    Tarief Elshafiey, Abdelrahman, DaVico, Kenneth M., Rishinaramangalam, Ashwin K., Rashidi, Arman, Aragon, Andrew, Feezell, Daniel, Gunning, Brendan P., Sheehan, Christopher, and Matias, Vladimir. Fri .  
"GaN/InGaN Blue Light-Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam-Assisted Deposition".  United States.  https://doi.org/10.1002/pssa.201900800.  https://www.osti.gov/servlets/purl/1618075.

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@article{osti_1618075,

  title        = {GaN/InGaN Blue Light-Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam-Assisted Deposition},

  author       = {Tarief Elshafiey, Abdelrahman and DaVico, Kenneth M. and Rishinaramangalam, Ashwin K. and Rashidi, Arman and Aragon, Andrew and Feezell, Daniel and Gunning, Brendan P. and Sheehan, Christopher and Matias, Vladimir},

  abstractNote = {Light-emitting diode (LED) arrays fabricated on a polycrystalline metal substrate are demonstrated using a novel technique that enables the growth of epitaxial metal-organic chemical vapor deposition (MOCVD) GaN layers on non-single-crystal substrates. Epitaxial GaN is deposited directly on metal foil using an intermediate ion beam-assisted deposition (IBAD) aligned layer. For a single 170 μm-diameter LED on the metal foil, electroluminescence (EL) spectrum shows a peak wavelength of ≈452 nm and a full width at half maximum (FWHM) of ≈24 nm. The current–voltage (I –V ) characteristics show a turn-on voltage of 3.7 V, a series resistance of 10 Ω. LEDs on metal show a relative external quantum efficiency (EQE) that is roughly 3× lower than that of similar LEDs fabricated on a sapphire substrate. Finally, InGaN LEDs on large-area non-single-crystal substrates such as metal foils enable large-area manufacturing, reducing production cost, and opening the door for new applications in lighting and displays.},

  doi          = {10.1002/pssa.201900800},

  journal      = {Physica Status Solidi. A, Applications and Materials Science},

  number       = 7,

  volume       = 217,

  place        = {United States},

  year         = {Fri Jan 31 00:00:00 EST 2020},

  month        = {Fri Jan 31 00:00:00 EST 2020}

}

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Title: GaN/InGaN Blue Light-Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam-Assisted Deposition

Abstract

Citation Formats

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Nanowire LEDs grown directly on flexible metal foil
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Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering
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Ror2 signaling regulates Golgi structure and transport through IFT20 for tumor invasiveness
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Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates
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Weakening of the stratospheric polar vortex by Arctic sea-ice loss
journal, September 2014

Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil
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Molecular beam epitaxy and characterization of AlGaN nanowire ultraviolet light emitting diodes on Al coated Si (0 0 1) substrate
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