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Title: High mobility in a van der Waals layered antiferromagnetic metal

Abstract

Van der Waals (vdW) materials with magnetic order have been heavily pursued for fundamental physics as well as for device design. Despite the rapid advances, so far, they are mainly insulating or semiconducting, and none of them has a high electronic mobility—a property that is rare in layered vdW materials in general. The realization of a high-mobility vdW material that also exhibits magnetic order would open the possibility for novel magnetic twistronic or spintronic devices. Here, we report very high carrier mobility in the layered vdW antiferromagnet GdTe 3. The electron mobility is beyond 60,000 cm 2V –1s –1, which is the highest among all known layered magnetic materials, to the best of our knowledge. Among all known vdW materials, the mobility of bulk GdTe 3is comparable to that of black phosphorus. By mechanical exfoliation, we further demonstrate that GdTe 3can be exfoliated to ultrathin flakes of three monolayers.

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [2];  [3];  [1];  [1]; ORCiD logo [1]; ORCiD logo [4];  [4];  [3]; ORCiD logo [1]; ORCiD logo [2];  [1]; ORCiD logo [1]; ORCiD logo [1]
  1. Princeton Univ., NJ (United States)
  2. Boston College, Boston, MA (United States)
  3. Max-Planck-Inst. für Festkörperforschung, Stuttgart (Germany)
  4. Argonne National Lab. (ANL), Argonne, IL (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
National Science Foundation (NSF); ExxonMobil Research and Engineering Company; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Scientific User Facilities Division
OSTI Identifier:
1599045
Grant/Contract Number:  
[AC02-06CH11357; DMR-1904442; DMR-0703406; DMR-1420541; ARO W911NF-12-1-0461; SC0017863; DMR-1709987; DMR-142054; FG02-07ER46419]
Resource Type:
Accepted Manuscript
Journal Name:
Science Advances
Additional Journal Information:
[ Journal Volume: 6; Journal Issue: 6]; Journal ID: ISSN 2375-2548
Publisher:
AAAS
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Lei, Shiming, Lin, Jingjing, Jia, Yanyu, Gray, Mason, Topp, Andreas, Farahi, Gelareh, Klemenz, Sebastian, Gao, Tong, Rodolakis, Fanny, McChesney, Jessica L., Ast, Christian R., Yazdani, Ali, Burch, Kenneth S., Wu, Sanfeng, Ong, Nai Phuan, and Schoop, Leslie M. High mobility in a van der Waals layered antiferromagnetic metal. United States: N. p., 2020. Web. doi:10.1126/sciadv.aay6407.
Lei, Shiming, Lin, Jingjing, Jia, Yanyu, Gray, Mason, Topp, Andreas, Farahi, Gelareh, Klemenz, Sebastian, Gao, Tong, Rodolakis, Fanny, McChesney, Jessica L., Ast, Christian R., Yazdani, Ali, Burch, Kenneth S., Wu, Sanfeng, Ong, Nai Phuan, & Schoop, Leslie M. High mobility in a van der Waals layered antiferromagnetic metal. United States. doi:10.1126/sciadv.aay6407.
Lei, Shiming, Lin, Jingjing, Jia, Yanyu, Gray, Mason, Topp, Andreas, Farahi, Gelareh, Klemenz, Sebastian, Gao, Tong, Rodolakis, Fanny, McChesney, Jessica L., Ast, Christian R., Yazdani, Ali, Burch, Kenneth S., Wu, Sanfeng, Ong, Nai Phuan, and Schoop, Leslie M. Fri . "High mobility in a van der Waals layered antiferromagnetic metal". United States. doi:10.1126/sciadv.aay6407. https://www.osti.gov/servlets/purl/1599045.
@article{osti_1599045,
title = {High mobility in a van der Waals layered antiferromagnetic metal},
author = {Lei, Shiming and Lin, Jingjing and Jia, Yanyu and Gray, Mason and Topp, Andreas and Farahi, Gelareh and Klemenz, Sebastian and Gao, Tong and Rodolakis, Fanny and McChesney, Jessica L. and Ast, Christian R. and Yazdani, Ali and Burch, Kenneth S. and Wu, Sanfeng and Ong, Nai Phuan and Schoop, Leslie M.},
abstractNote = {Van der Waals (vdW) materials with magnetic order have been heavily pursued for fundamental physics as well as for device design. Despite the rapid advances, so far, they are mainly insulating or semiconducting, and none of them has a high electronic mobility—a property that is rare in layered vdW materials in general. The realization of a high-mobility vdW material that also exhibits magnetic order would open the possibility for novel magnetic twistronic or spintronic devices. Here, we report very high carrier mobility in the layered vdW antiferromagnet GdTe3. The electron mobility is beyond 60,000 cm2V–1s–1, which is the highest among all known layered magnetic materials, to the best of our knowledge. Among all known vdW materials, the mobility of bulk GdTe3is comparable to that of black phosphorus. By mechanical exfoliation, we further demonstrate that GdTe3can be exfoliated to ultrathin flakes of three monolayers.},
doi = {10.1126/sciadv.aay6407},
journal = {Science Advances},
number = [6],
volume = [6],
place = {United States},
year = {2020},
month = {2}
}

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