High mobility in a van der Waals layered antiferromagnetic metal
Abstract
Van der Waals (vdW) materials with magnetic order have been heavily pursued for fundamental physics as well as for device design. Despite the rapid advances, so far, they are mainly insulating or semiconducting, and none of them has a high electronic mobility—a property that is rare in layered vdW materials in general. The realization of a high-mobility vdW material that also exhibits magnetic order would open the possibility for novel magnetic twistronic or spintronic devices. Here, we report very high carrier mobility in the layered vdW antiferromagnet GdTe3. The electron mobility is beyond 60,000 cm2V–1s–1, which is the highest among all known layered magnetic materials, to the best of our knowledge. Among all known vdW materials, the mobility of bulk GdTe3is comparable to that of black phosphorus. By mechanical exfoliation, we further demonstrate that GdTe3can be exfoliated to ultrathin flakes of three monolayers.
- Authors:
-
- Princeton Univ., NJ (United States)
- Boston College, Boston, MA (United States)
- Max-Planck-Inst. für Festkörperforschung, Stuttgart (Germany)
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Publication Date:
- Research Org.:
- Princeton Univ., NJ (United States); Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; National Science Foundation (NSF); ExxonMobil Research and Engineering Company
- OSTI Identifier:
- 1839265
- Alternate Identifier(s):
- OSTI ID: 1599045
- Grant/Contract Number:
- FG02-07ER46419; AC02-06CH11357; DMR-1904442; DMR-0703406; DMR-1420541; ARO W911NF-12-1-0461; SC0017863; DMR-1709987; DMR-142054
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Science Advances
- Additional Journal Information:
- Journal Volume: 6; Journal Issue: 6; Journal ID: ISSN 2375-2548
- Publisher:
- AAAS
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Lei, Shiming, Lin, Jingjing, Jia, Yanyu, Gray, Mason, Topp, Andreas, Farahi, Gelareh, Klemenz, Sebastian, Gao, Tong, Rodolakis, Fanny, McChesney, Jessica L., Ast, Christian R., Yazdani, Ali, Burch, Kenneth S., Wu, Sanfeng, Ong, Nai Phuan, and Schoop, Leslie M. High mobility in a van der Waals layered antiferromagnetic metal. United States: N. p., 2020.
Web. doi:10.1126/sciadv.aay6407.
Lei, Shiming, Lin, Jingjing, Jia, Yanyu, Gray, Mason, Topp, Andreas, Farahi, Gelareh, Klemenz, Sebastian, Gao, Tong, Rodolakis, Fanny, McChesney, Jessica L., Ast, Christian R., Yazdani, Ali, Burch, Kenneth S., Wu, Sanfeng, Ong, Nai Phuan, & Schoop, Leslie M. High mobility in a van der Waals layered antiferromagnetic metal. United States. https://doi.org/10.1126/sciadv.aay6407
Lei, Shiming, Lin, Jingjing, Jia, Yanyu, Gray, Mason, Topp, Andreas, Farahi, Gelareh, Klemenz, Sebastian, Gao, Tong, Rodolakis, Fanny, McChesney, Jessica L., Ast, Christian R., Yazdani, Ali, Burch, Kenneth S., Wu, Sanfeng, Ong, Nai Phuan, and Schoop, Leslie M. Fri .
"High mobility in a van der Waals layered antiferromagnetic metal". United States. https://doi.org/10.1126/sciadv.aay6407. https://www.osti.gov/servlets/purl/1839265.
@article{osti_1839265,
title = {High mobility in a van der Waals layered antiferromagnetic metal},
author = {Lei, Shiming and Lin, Jingjing and Jia, Yanyu and Gray, Mason and Topp, Andreas and Farahi, Gelareh and Klemenz, Sebastian and Gao, Tong and Rodolakis, Fanny and McChesney, Jessica L. and Ast, Christian R. and Yazdani, Ali and Burch, Kenneth S. and Wu, Sanfeng and Ong, Nai Phuan and Schoop, Leslie M.},
abstractNote = {Van der Waals (vdW) materials with magnetic order have been heavily pursued for fundamental physics as well as for device design. Despite the rapid advances, so far, they are mainly insulating or semiconducting, and none of them has a high electronic mobility—a property that is rare in layered vdW materials in general. The realization of a high-mobility vdW material that also exhibits magnetic order would open the possibility for novel magnetic twistronic or spintronic devices. Here, we report very high carrier mobility in the layered vdW antiferromagnet GdTe3. The electron mobility is beyond 60,000 cm2V–1s–1, which is the highest among all known layered magnetic materials, to the best of our knowledge. Among all known vdW materials, the mobility of bulk GdTe3is comparable to that of black phosphorus. By mechanical exfoliation, we further demonstrate that GdTe3can be exfoliated to ultrathin flakes of three monolayers.},
doi = {10.1126/sciadv.aay6407},
journal = {Science Advances},
number = 6,
volume = 6,
place = {United States},
year = {Fri Feb 07 00:00:00 EST 2020},
month = {Fri Feb 07 00:00:00 EST 2020}
}
Web of Science
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