Negative differential resistance observed on the charge density wave of a transition metal dichalcogenide
Abstract
Charge density waves and negative differential resistance are seemingly unconnected physical phenomena. The former is an ordered quantum fluid of electrons, intensely investigated for its relation with superconductivity, while the latter receives much attention for its potential applications in electronics. Here we show that these two phenomena can not only coexist but also that the localized electronic states of the charge density wave are essential to induce negative differential resistance in a transition metal dichalcogenide, 1T-TaS2. Using scanning tunneling microscopy and spectroscopy, we report the observation of negative differential resistance in the commensurate charge density wave state of 1T-TaS2. The observed phenomenon is explained by the interplay of interlayer and intra-layer tunneling with the participation of the atomically localized states of the charge density wave maxima and minima. Here, we demonstrate that lattice defects can locally affect the coupling between the layers and are therefore a mechanism to realize NDR in these materials.
- Authors:
-
- Argonne National Lab. (ANL), Argonne, IL (United States); Univ. of Ottawa, Ottawa (Canada)
- Argonne National Lab. (ANL), Argonne, IL (United States); Old Dominion Univ., Norfolk, VA (United States)
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Argonne National Lab. (ANL), Argonne, IL (United States); Ohio Univ., Athens, OH (United States)
- Ohio Univ., Athens, OH (United States)
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1579324
- Alternate Identifier(s):
- OSTI ID: 1576025
- Grant/Contract Number:
- AC02-06CH11357; FG02-02ER46012; PHY-1607611
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nanoscale
- Additional Journal Information:
- Journal Volume: 11; Journal Issue: 46; Journal ID: ISSN 2040-3364
- Publisher:
- Royal Society of Chemistry
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; Charge Density Waves; Scanning Tunneling Microscopy
Citation Formats
Luican-Mayer, Adina, Zhang, Yuan, DiLullo, Andrew, Li, Yang, Fisher, Brandon, Ulloa, Sergio E., and Hla, Saw -Wai. Negative differential resistance observed on the charge density wave of a transition metal dichalcogenide. United States: N. p., 2019.
Web. doi:10.1039/c9nr07857f.
Luican-Mayer, Adina, Zhang, Yuan, DiLullo, Andrew, Li, Yang, Fisher, Brandon, Ulloa, Sergio E., & Hla, Saw -Wai. Negative differential resistance observed on the charge density wave of a transition metal dichalcogenide. United States. https://doi.org/10.1039/c9nr07857f
Luican-Mayer, Adina, Zhang, Yuan, DiLullo, Andrew, Li, Yang, Fisher, Brandon, Ulloa, Sergio E., and Hla, Saw -Wai. Fri .
"Negative differential resistance observed on the charge density wave of a transition metal dichalcogenide". United States. https://doi.org/10.1039/c9nr07857f. https://www.osti.gov/servlets/purl/1579324.
@article{osti_1579324,
title = {Negative differential resistance observed on the charge density wave of a transition metal dichalcogenide},
author = {Luican-Mayer, Adina and Zhang, Yuan and DiLullo, Andrew and Li, Yang and Fisher, Brandon and Ulloa, Sergio E. and Hla, Saw -Wai},
abstractNote = {Charge density waves and negative differential resistance are seemingly unconnected physical phenomena. The former is an ordered quantum fluid of electrons, intensely investigated for its relation with superconductivity, while the latter receives much attention for its potential applications in electronics. Here we show that these two phenomena can not only coexist but also that the localized electronic states of the charge density wave are essential to induce negative differential resistance in a transition metal dichalcogenide, 1T-TaS2. Using scanning tunneling microscopy and spectroscopy, we report the observation of negative differential resistance in the commensurate charge density wave state of 1T-TaS2. The observed phenomenon is explained by the interplay of interlayer and intra-layer tunneling with the participation of the atomically localized states of the charge density wave maxima and minima. Here, we demonstrate that lattice defects can locally affect the coupling between the layers and are therefore a mechanism to realize NDR in these materials.},
doi = {10.1039/c9nr07857f},
journal = {Nanoscale},
number = 46,
volume = 11,
place = {United States},
year = {Fri Nov 08 00:00:00 EST 2019},
month = {Fri Nov 08 00:00:00 EST 2019}
}
Web of Science
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