skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

This content will become publicly available on November 8, 2020

Title: Negative differential resistance observed on the charge density wave of a transition metal dichalcogenide

Abstract

Charge density waves and negative differential resistance are seemingly unconnected physical phenomena. The former is an ordered quantum fluid of electrons, intensely investigated for its relation with superconductivity, while the latter receives much attention for its potential applications in electronics. Here we show that these two phenomena can not only coexist but also that the localized electronic states of the charge density wave are essential to induce negative differential resistance in a transition metal dichalcogenide, 1T-TaS 2. Using scanning tunneling microscopy and spectroscopy, we report the observation of negative differential resistance in the commensurate charge density wave state of 1T-TaS 2. The observed phenomenon is explained by the interplay of interlayer and intra-layer tunneling with the participation of the atomically localized states of the charge density wave maxima and minima. Here, we demonstrate that lattice defects can locally affect the coupling between the layers and are therefore a mechanism to realize NDR in these materials.

Authors:
ORCiD logo [1]; ORCiD logo [2];  [3];  [4];  [3]; ORCiD logo [5]; ORCiD logo [4]
  1. Argonne National Lab. (ANL), Argonne, IL (United States); Univ. of Ottawa, Ottawa (Canada)
  2. Argonne National Lab. (ANL), Argonne, IL (United States); Old Dominion Univ., Norfolk, VA (United States)
  3. Argonne National Lab. (ANL), Argonne, IL (United States)
  4. Argonne National Lab. (ANL), Argonne, IL (United States); Ohio Univ., Athens, OH (United States)
  5. Ohio Univ., Athens, OH (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1579324
Alternate Identifier(s):
OSTI ID: 1576025
Grant/Contract Number:  
AC02-06CH11357; FG02-02ER46012; PHY-1607611
Resource Type:
Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Volume: 11; Journal Issue: 46; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; Charge Density Waves; Scanning Tunneling Microscopy

Citation Formats

Luican-Mayer, Adina, Zhang, Yuan, DiLullo, Andrew, Li, Yang, Fisher, Brandon, Ulloa, Sergio E., and Hla, Saw -Wai. Negative differential resistance observed on the charge density wave of a transition metal dichalcogenide. United States: N. p., 2019. Web. doi:10.1039/c9nr07857f.
Luican-Mayer, Adina, Zhang, Yuan, DiLullo, Andrew, Li, Yang, Fisher, Brandon, Ulloa, Sergio E., & Hla, Saw -Wai. Negative differential resistance observed on the charge density wave of a transition metal dichalcogenide. United States. doi:10.1039/c9nr07857f.
Luican-Mayer, Adina, Zhang, Yuan, DiLullo, Andrew, Li, Yang, Fisher, Brandon, Ulloa, Sergio E., and Hla, Saw -Wai. Fri . "Negative differential resistance observed on the charge density wave of a transition metal dichalcogenide". United States. doi:10.1039/c9nr07857f.
@article{osti_1579324,
title = {Negative differential resistance observed on the charge density wave of a transition metal dichalcogenide},
author = {Luican-Mayer, Adina and Zhang, Yuan and DiLullo, Andrew and Li, Yang and Fisher, Brandon and Ulloa, Sergio E. and Hla, Saw -Wai},
abstractNote = {Charge density waves and negative differential resistance are seemingly unconnected physical phenomena. The former is an ordered quantum fluid of electrons, intensely investigated for its relation with superconductivity, while the latter receives much attention for its potential applications in electronics. Here we show that these two phenomena can not only coexist but also that the localized electronic states of the charge density wave are essential to induce negative differential resistance in a transition metal dichalcogenide, 1T-TaS2. Using scanning tunneling microscopy and spectroscopy, we report the observation of negative differential resistance in the commensurate charge density wave state of 1T-TaS2. The observed phenomenon is explained by the interplay of interlayer and intra-layer tunneling with the participation of the atomically localized states of the charge density wave maxima and minima. Here, we demonstrate that lattice defects can locally affect the coupling between the layers and are therefore a mechanism to realize NDR in these materials.},
doi = {10.1039/c9nr07857f},
journal = {Nanoscale},
number = 46,
volume = 11,
place = {United States},
year = {2019},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on November 8, 2020
Publisher's Version of Record

Save / Share:

Works referenced in this record:

From Mott state to superconductivity in 1T-TaS2
journal, November 2008

  • Sipos, B.; Kusmartseva, A. F.; Akrap, A.
  • Nature Materials, Vol. 7, Issue 12
  • DOI: 10.1038/nmat2318

Quantum spin Hall state in monolayer 1T'-WTe2
journal, June 2017

  • Tang, Shujie; Zhang, Chaofan; Wong, Dillon
  • Nature Physics, Vol. 13, Issue 7
  • DOI: 10.1038/nphys4174

Wrap‐Around Core–Shell Heterostructures of Layered Crystals
journal, May 2019


Gate-tunable phase transitions in thin flakes of 1T-TaS2
journal, January 2015


Stabilizing the commensurate charge-density wave in 1T-tantalum disulfide at higher temperatures via potassium intercalation
journal, January 2019

  • Zhao, Rui; Grisafe, Benjamin; Ghosh, Ram Krishna
  • Nanoscale, Vol. 11, Issue 13
  • DOI: 10.1039/C8NR09732A

Intercalation of vacuum deposited silver into 1T-TaS2 and its influence on charge density waves
journal, February 1995


Ultrafast Switching to a Stable Hidden Quantum State in an Electronic Crystal
journal, April 2014


Phase ordering of charge density waves traced by ultrafast low-energy electron diffraction
journal, November 2017

  • Vogelgesang, S.; Storeck, G.; Horstmann, J. G.
  • Nature Physics, Vol. 14, Issue 2
  • DOI: 10.1038/nphys4309

Local charge-density-wave structure in 1 T - TaS 2 determined by scanning tunneling microscopy
journal, November 1988


Atomistic origin of an ordered superstructure induced superconductivity in layered chalcogenides
journal, January 2015

  • Ang, R.; Wang, Z. C.; Chen, C. L.
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms7091

Charge-density waves and superlattices in the metallic layered transition metal dichalcogenides
journal, March 1975


Orbital textures and charge density waves in transition metal dichalcogenides
journal, March 2015

  • Ritschel, T.; Trinckauf, J.; Koepernik, K.
  • Nature Physics, Vol. 11, Issue 4
  • DOI: 10.1038/nphys3267

Nanoscale measurement of Nernst effect in two-dimensional charge density wave material 1T-TaS 2
journal, November 2017

  • Wu, Stephen M.; Luican-Mayer, Adina; Bhattacharya, Anand
  • Applied Physics Letters, Vol. 111, Issue 22
  • DOI: 10.1063/1.5004804

STM/AFM investigations of β-MoTe2, α-MoTe2 and WTe2
journal, May 1996


Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2
journal, January 2016

  • Cho, Doohee; Cheon, Sangmo; Kim, Ki-Seok
  • Nature Communications, Vol. 7, Issue 1
  • DOI: 10.1038/ncomms10453

Correlated electronic states at domain walls of a Mott-charge-density-wave insulator 1T-TaS2
journal, August 2017


Surface-Limited Superconducting Phase Transition on 1 T -TaS 2
journal, November 2018


Mottness collapse without metallization in the domain wall of the triangular-lattice Mott insulator 1 T TaS 2
journal, January 2019


Atom-by-atom assembly
journal, May 2014


Room Temperature Negative Differential Resistance through Individual Organic Molecules on Silicon Surfaces
journal, January 2004

  • Guisinger, Nathan P.; Greene, Mark E.; Basu, Rajiv
  • Nano Letters, Vol. 4, Issue 1
  • DOI: 10.1021/nl0348589

Tuning negative differential resistance in a molecular film
journal, May 2005

  • Grobis, M.; Wachowiak, A.; Yamachika, R.
  • Applied Physics Letters, Vol. 86, Issue 20
  • DOI: 10.1063/1.1931822

Negative Differential Resistance on the Atomic Scale: Implications for Atomic Scale Devices
journal, September 1989


Visualizing Atomic-Scale Negative Differential Resistance in Bilayer Graphene
journal, January 2013


Observation of Mott Localization Gap Using Low Temperature Scanning Tunneling Spectroscopy in Commensurate 1 T T a Sa 2
journal, October 1994


A metallic mosaic phase and the origin of Mott-insulating state in 1T-TaS2
journal, March 2016

  • Ma, Liguo; Ye, Cun; Yu, Yijun
  • Nature Communications, Vol. 7, Issue 1
  • DOI: 10.1038/ncomms10956

Band structures of the layer compounds 1T-TaS 2 and 2H-TaSe 2 in the presence of commensurate charge-density waves
journal, June 1985

  • Smith, N. V.; Kevan, S. D.; DiSalvo, F. J.
  • Journal of Physics C: Solid State Physics, Vol. 18, Issue 16
  • DOI: 10.1088/0022-3719/18/16/013

Electrical, structural and magnetic properties of pure and doped 1T-TaS 2
journal, March 1979


Femtosecond dynamics of electronic states in the Mott insulator 1T-TaS 2 by time resolved photoelectron spectroscopy
journal, May 2008


Phonon anomaly at the charge ordering transition in 1 T TaS 2
journal, September 2002


Electronic correlation effects and orbital density wave in the layered compound 1 T -TaS 2
journal, September 2017


Three-dimensional metallic and two-dimensional insulating behavior in octahedral tantalum dichalcogenides
journal, July 2014