Low-Voltage, CMOS-Free Synaptic Memory Based on LiXTiO2 Redox Transistors
Abstract
Neuromorphic computers based on analogue neural networks aim to substantially lower computing power by reducing the need to shuttle data between memory and logic units. Artificial synapses containing nonvolatile analogue conductance states enable direct computation using memory elements; however, most nonvolatile analogue memories require high write voltages and large current densities and are accompanied by nonlinear and unpredictable weight updates. Here, we develop an inorganic redox transistor based on electrochemical lithium-ion insertion into LiXTiO2 that displays linear weight updates at both low current densities and low write voltages. The write voltage, as low as 200 mV at room temperature, is achieved by minimizing the open-circuit voltage and using a low-voltage diffusive memristor selector. We further show that the LiXTiO2 redox transistor can achieve an extremely sharp transistor subthreshold slope of just 40 mV/decade when operating in an electrochemically driven phase transformation regime.
- Authors:
-
[1];
[1]
- Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Univ. of Massachusetts, Amherst, MA (United States)
- Sandia National Lab. (SNL-CA), Livermore, CA (United States); Fujitsu Lab., Ltd., Atsugi, Kanagawa (Japan)
- Publication Date:
- Research Org.:
- Energy Frontier Research Centers (EFRC) (United States). Nanostructures for Electrical Energy Storage (NEES); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); US Air Force Office of Scientific Research (AFOSR); USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1570267
- Report Number(s):
- SAND-2019-11568J
Journal ID: ISSN 1944-8244; 680029
- Grant/Contract Number:
- AC04-94AL85000; NA0003525; SC0001160
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ACS Applied Materials and Interfaces
- Additional Journal Information:
- Journal Volume: 11; Journal Issue: 42; Journal ID: ISSN 1944-8244
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; redox transistor; artificial synapse; low-energy computing; electrochemical ion insertion; subthreshold slope; Ti02; diffusive memristor
Citation Formats
Li, Yiyang, Fuller, Elliot James, Asapu, Shiva, Kurita, Tomochika, Agarwal, Sapan, Yang, J. Joshua, and Talin, Albert Alec. Low-Voltage, CMOS-Free Synaptic Memory Based on LiXTiO2 Redox Transistors. United States: N. p., 2019.
Web. doi:10.1021/acsami.9b14338.
Li, Yiyang, Fuller, Elliot James, Asapu, Shiva, Kurita, Tomochika, Agarwal, Sapan, Yang, J. Joshua, & Talin, Albert Alec. Low-Voltage, CMOS-Free Synaptic Memory Based on LiXTiO2 Redox Transistors. United States. https://doi.org/10.1021/acsami.9b14338
Li, Yiyang, Fuller, Elliot James, Asapu, Shiva, Kurita, Tomochika, Agarwal, Sapan, Yang, J. Joshua, and Talin, Albert Alec. Fri .
"Low-Voltage, CMOS-Free Synaptic Memory Based on LiXTiO2 Redox Transistors". United States. https://doi.org/10.1021/acsami.9b14338. https://www.osti.gov/servlets/purl/1570267.
@article{osti_1570267,
title = {Low-Voltage, CMOS-Free Synaptic Memory Based on LiXTiO2 Redox Transistors},
author = {Li, Yiyang and Fuller, Elliot James and Asapu, Shiva and Kurita, Tomochika and Agarwal, Sapan and Yang, J. Joshua and Talin, Albert Alec},
abstractNote = {Neuromorphic computers based on analogue neural networks aim to substantially lower computing power by reducing the need to shuttle data between memory and logic units. Artificial synapses containing nonvolatile analogue conductance states enable direct computation using memory elements; however, most nonvolatile analogue memories require high write voltages and large current densities and are accompanied by nonlinear and unpredictable weight updates. Here, we develop an inorganic redox transistor based on electrochemical lithium-ion insertion into LiXTiO2 that displays linear weight updates at both low current densities and low write voltages. The write voltage, as low as 200 mV at room temperature, is achieved by minimizing the open-circuit voltage and using a low-voltage diffusive memristor selector. We further show that the LiXTiO2 redox transistor can achieve an extremely sharp transistor subthreshold slope of just 40 mV/decade when operating in an electrochemically driven phase transformation regime.},
doi = {10.1021/acsami.9b14338},
journal = {ACS Applied Materials and Interfaces},
number = 42,
volume = 11,
place = {United States},
year = {Fri Sep 27 00:00:00 EDT 2019},
month = {Fri Sep 27 00:00:00 EDT 2019}
}
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