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Title: Li-ion synaptic transistor for low power analog computing

Nonvolatile redox transistors (NVRTs) based upon Li-ion battery materials are demonstrated as memory elements for neuromorphic computer architectures with multi-level analog states, “write” linearity, low-voltage switching, and low power dissipation. Simulations of back propagation using the device properties reach ideal classification accuracy. Finally, physics-based simulations predict energy costs per “write” operation of <10 aJ when scaled to 200 nm × 200 nm.
Authors:
 [1] ;  [1] ;  [1] ;  [2] ;  [2] ;  [2] ;  [2] ;  [2] ;  [1]
  1. Sandia National Lab. (SNL-CA), Livermore, CA (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Report Number(s):
SAND-2017-0895J
Journal ID: ISSN 0935-9648; 650771
Grant/Contract Number:
AC04-94AL85000; DESC0001160
Type:
Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 29; Journal Issue: 4; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Research Org:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
97 MATHEMATICS AND COMPUTING; 30 DIRECT ENERGY CONVERSION; 36 MATERIALS SCIENCE
OSTI Identifier:
1343625
Alternate Identifier(s):
OSTI ID: 1401249