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Title: Li-ion synaptic transistor for low power analog computing

Abstract

Nonvolatile redox transistors (NVRTs) based upon Li-ion battery materials are demonstrated as memory elements for neuromorphic computer architectures with multi-level analog states, “write” linearity, low-voltage switching, and low power dissipation. Simulations of back propagation using the device properties reach ideal classification accuracy. Finally, physics-based simulations predict energy costs per “write” operation of <10 aJ when scaled to 200 nm × 200 nm.

Authors:
 [1];  [1];  [1];  [2];  [2];  [2];  [2];  [2];  [1]
  1. Sandia National Lab. (SNL-CA), Livermore, CA (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1343625
Alternate Identifier(s):
OSTI ID: 1401249
Report Number(s):
SAND-2017-0895J
Journal ID: ISSN 0935-9648; 650771
Grant/Contract Number:  
AC04-94AL85000; DESC0001160
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 29; Journal Issue: 4; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
97 MATHEMATICS AND COMPUTING; 30 DIRECT ENERGY CONVERSION; 36 MATERIALS SCIENCE

Citation Formats

Fuller, Elliot J., Gabaly, Farid El, Leonard, Francois, Agarwal, Sapan, Plimpton, Steven J., Jacobs-Gedrim, Robin B., James, Conrad D., Marinella, Matthew J., and Talin, Albert Alec. Li-ion synaptic transistor for low power analog computing. United States: N. p., 2016. Web. doi:10.1002/adma.201604310.
Fuller, Elliot J., Gabaly, Farid El, Leonard, Francois, Agarwal, Sapan, Plimpton, Steven J., Jacobs-Gedrim, Robin B., James, Conrad D., Marinella, Matthew J., & Talin, Albert Alec. Li-ion synaptic transistor for low power analog computing. United States. doi:10.1002/adma.201604310.
Fuller, Elliot J., Gabaly, Farid El, Leonard, Francois, Agarwal, Sapan, Plimpton, Steven J., Jacobs-Gedrim, Robin B., James, Conrad D., Marinella, Matthew J., and Talin, Albert Alec. Tue . "Li-ion synaptic transistor for low power analog computing". United States. doi:10.1002/adma.201604310. https://www.osti.gov/servlets/purl/1343625.
@article{osti_1343625,
title = {Li-ion synaptic transistor for low power analog computing},
author = {Fuller, Elliot J. and Gabaly, Farid El and Leonard, Francois and Agarwal, Sapan and Plimpton, Steven J. and Jacobs-Gedrim, Robin B. and James, Conrad D. and Marinella, Matthew J. and Talin, Albert Alec},
abstractNote = {Nonvolatile redox transistors (NVRTs) based upon Li-ion battery materials are demonstrated as memory elements for neuromorphic computer architectures with multi-level analog states, “write” linearity, low-voltage switching, and low power dissipation. Simulations of back propagation using the device properties reach ideal classification accuracy. Finally, physics-based simulations predict energy costs per “write” operation of <10 aJ when scaled to 200 nm × 200 nm.},
doi = {10.1002/adma.201604310},
journal = {Advanced Materials},
number = 4,
volume = 29,
place = {United States},
year = {2016},
month = {11}
}

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