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Title: Conformal High-K Dielectric Coating of Suspended Single-Walled Carbon Nanotubes by Atomic Layer Deposition

Abstract

As one of the highest mobility semiconductor materials, carbon nanotubes (CNTs) have been extensively studied for use in field effect transistors (FETs). To fabricate surround-gate FETs- which offer the best switching performance-deposition of conformal, weakly-interacting dielectric layers is necessary. This is challenging due to the chemically inert surface of CNTs and a lack of nucleation sites-especially for defect-free CNTs. As a result, a technique that enables integration of uniform high-k dielectrics, while preserving the CNT's exceptional properties is required. In this work, we show a method that enables conformal atomic layer deposition (ALD) of high-k dielectrics on defect-free CNTs. By depositing a thin Ti metal film, followed by oxidation to TiO2 under ambient conditions, a nucleation layer is formed for subsequent ALD deposition of Al2O3. The technique is easy to implement and is VLSI-compatible. We show that the ALD coatings are uniform, continuous and conformal, and Raman spectroscopy reveals that the technique does not induce defects in the CNT. The resulting bilayer TiO2/Al2O3 thin-film shows an improved dielectric constant of 21.7 and an equivalent oxide thickness of 2.7 nm. The electrical properties of back-gated and top-gated devices fabricated using this method are presented.

Authors:
; ; ;
Publication Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1545395
Alternate Identifier(s):
OSTI ID: 1628512; OSTI ID: 1650067
Grant/Contract Number:  
AC02-05CH11231; BR05236454; 090118FD5346
Resource Type:
Published Article
Journal Name:
Nanomaterials
Additional Journal Information:
Journal Name: Nanomaterials Journal Volume: 9 Journal Issue: 8; Journal ID: ISSN 2079-4991
Publisher:
MDPI
Country of Publication:
Switzerland
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; Science & Technology - Other Topics; Materials Science; carbon nanotube; atomic layer deposition; dielectric; TiO2; nucleation layer

Citation Formats

Kemelbay,, Tikhonov,, Aloni,, and Kuykendall,. Conformal High-K Dielectric Coating of Suspended Single-Walled Carbon Nanotubes by Atomic Layer Deposition. Switzerland: N. p., 2019. Web. doi:10.3390/nano9081085.
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Kemelbay,, Tikhonov,, Aloni,, & Kuykendall,. Conformal High-K Dielectric Coating of Suspended Single-Walled Carbon Nanotubes by Atomic Layer Deposition. Switzerland. https://doi.org/10.3390/nano9081085
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Kemelbay,, Tikhonov,, Aloni,, and Kuykendall,. Sun . "Conformal High-K Dielectric Coating of Suspended Single-Walled Carbon Nanotubes by Atomic Layer Deposition". Switzerland. https://doi.org/10.3390/nano9081085.
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@article{osti_1545395,
title = {Conformal High-K Dielectric Coating of Suspended Single-Walled Carbon Nanotubes by Atomic Layer Deposition},
author = {Kemelbay, and Tikhonov, and Aloni, and Kuykendall,},
abstractNote = {As one of the highest mobility semiconductor materials, carbon nanotubes (CNTs) have been extensively studied for use in field effect transistors (FETs). To fabricate surround-gate FETs- which offer the best switching performance-deposition of conformal, weakly-interacting dielectric layers is necessary. This is challenging due to the chemically inert surface of CNTs and a lack of nucleation sites-especially for defect-free CNTs. As a result, a technique that enables integration of uniform high-k dielectrics, while preserving the CNT's exceptional properties is required. In this work, we show a method that enables conformal atomic layer deposition (ALD) of high-k dielectrics on defect-free CNTs. By depositing a thin Ti metal film, followed by oxidation to TiO2 under ambient conditions, a nucleation layer is formed for subsequent ALD deposition of Al2O3. The technique is easy to implement and is VLSI-compatible. We show that the ALD coatings are uniform, continuous and conformal, and Raman spectroscopy reveals that the technique does not induce defects in the CNT. The resulting bilayer TiO2/Al2O3 thin-film shows an improved dielectric constant of 21.7 and an equivalent oxide thickness of 2.7 nm. The electrical properties of back-gated and top-gated devices fabricated using this method are presented.},
doi = {10.3390/nano9081085},
journal = {Nanomaterials},
number = 8,
volume = 9,
place = {Switzerland},
year = {Sun Jul 28 00:00:00 EDT 2019},
month = {Sun Jul 28 00:00:00 EDT 2019}
}
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Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.3390/nano9081085
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Cited by: 4 works
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Figures / Tables:

Figure 1 Figure 1: Morphology and coverage of CNT dielectric coatings. (a) SEM images of CNTs without TiO2 pretreatment (left) and with TiO2 pretreatment (right); (b–i) TEM images of CNTs with (b) 10 nm of Al2O3 only; (c) 3 nm of Ti converted to TiO2 and covered with 10 nm of Al2O3;more » (d) 5 nm of Ti converted to TiO2 and covered with 10 nm of Al2O3; (e) 3 nm Ti converted to TiO2 only; (f) 5 nm Ti converted to TiO2 only; (g) 3 nm of Ti converted to TiO2 with 10 nm of Al2O3, rotated over 60° along the nanotube axis; (h) 5 nm Ti converted to TiO2 with 10 nm of Al2O3, three different projections of the CNT rotated over 59° along the nanotube axis; (i) a corresponding high-resolution image of the CNT shown in (h).« less
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