Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts

Clinton, Evan A.; Vadiee, Ehsan; Shen, Shyh-Chiang; Mehta, Karan; Yoder, P. Douglas; Doolittle, W. Alan

doi:10.1063/1.5035293

Title: Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts

Abstract

The current-voltage characteristics and metastability in GaN p++/n++ homojunction tunnel diodes and n++/p++/i/n tunnel-contacted diodes grown via metal modulated epitaxy have been reported on. The room temperature negative differential resistance (NDR) beginning at ~1.35 V is discussed for GaN homojunction devices grown on sapphire. The NDR vanishes, and the conductivity increases as multiple I-V sweeps are performed, thus implying that charge trapping states with long trap lifetimes exist at defect sites, and these traps play a crucial role in the tunneling mechanism. Additionally, the use of extremely high n-type (N_D ~ 4.6×10²⁰ cm^–3) and p-type (N_A ~ 7.7×10²⁰ cm^–3) doping results in a near linear characteristic with minimal rectification at current densities less than 200 A/cm² and soft rectification above this current density. Forward-bias tunneling and NDR are still present at 77 K. The highest silicon-doped n++/p++/i/n tunnel-contacted pin diode demonstrates a turn-on voltage of 3.12 V, only 0.14 V higher than that of the pin control diode, and an improved specific on-resistance of 3.24 ×10^–4 Ω cm², which is 13% lower than that of the control pin diode.

Authors:

Clinton, Evan A. ^[1];

^[1]; Shen, Shyh-Chiang ^[1];

^[1]; Yoder, P. Douglas ^[1]; Doolittle, W. Alan ^[1]

Georgia Inst. of Technology, Atlanta, GA (United States)

Publication Date:: Tue Jun 19 00:00:00 EDT 2018

Research Org.:: Arizona State Univ., Tempe, AZ (United States)

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E); National Science Foundation (NSF)

OSTI Identifier:: 1540218

Alternate Identifier(s):: OSTI ID: 1454896

Grant/Contract Number:: AR0000470

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 112; Journal Issue: 25; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING

Citation Formats


                    Clinton, Evan A., Vadiee, Ehsan, Shen, Shyh-Chiang, Mehta, Karan, Yoder, P. Douglas, and Doolittle, W. Alan. Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts.  United States: N. p., 2018. 
Web.  doi:10.1063/1.5035293.

Copy to clipboard


                    Clinton, Evan A., Vadiee, Ehsan, Shen, Shyh-Chiang, Mehta, Karan, Yoder, P. Douglas, & Doolittle, W. Alan. Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts.  United States.  https://doi.org/10.1063/1.5035293

Copy to clipboard


                    Clinton, Evan A., Vadiee, Ehsan, Shen, Shyh-Chiang, Mehta, Karan, Yoder, P. Douglas, and Doolittle, W. Alan. Tue .  
"Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts".  United States.  https://doi.org/10.1063/1.5035293.  https://www.osti.gov/servlets/purl/1540218.

Copy to clipboard


                    
@article{osti_1540218,

  title        = {Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts},

  author       = {Clinton, Evan A. and Vadiee, Ehsan and Shen, Shyh-Chiang and Mehta, Karan and Yoder, P. Douglas and Doolittle, W. Alan},

  abstractNote = {The current-voltage characteristics and metastability in GaN p++/n++ homojunction tunnel diodes and n++/p++/i/n tunnel-contacted diodes grown via metal modulated epitaxy have been reported on. The room temperature negative differential resistance (NDR) beginning at ~1.35 V is discussed for GaN homojunction devices grown on sapphire. The NDR vanishes, and the conductivity increases as multiple I-V sweeps are performed, thus implying that charge trapping states with long trap lifetimes exist at defect sites, and these traps play a crucial role in the tunneling mechanism. Additionally, the use of extremely high n-type (ND ~ 4.6×1020 cm–3) and p-type (NA ~ 7.7×1020 cm–3) doping results in a near linear characteristic with minimal rectification at current densities less than 200 A/cm2 and soft rectification above this current density. Forward-bias tunneling and NDR are still present at 77 K. The highest silicon-doped n++/p++/i/n tunnel-contacted pin diode demonstrates a turn-on voltage of 3.12 V, only 0.14 V higher than that of the pin control diode, and an improved specific on-resistance of 3.24 ×10–4 Ω cm2, which is 13% lower than that of the control pin diode.},

  doi          = {10.1063/1.5035293},

  journal      = {Applied Physics Letters},

  number       = 25,

  volume       = 112,

  place        = {United States},

  year         = {Tue Jun 19 00:00:00 EDT 2018},

  month        = {Tue Jun 19 00:00:00 EDT 2018}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1063/1.5035293

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 23 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Observation and control of the surface kinetics of InGaN for the elimination of phase separation
journal, July 2012

Moseley, Michael; Gunning, Brendan; Greenlee, Jordan
Journal of Applied Physics, Vol. 112, Issue 1
DOI: 10.1063/1.4733347

Hydrogen diffusion in GaN:Mg and GaN:Si
journal, May 2018

Czernecki, Robert; Grzanka, Ewa; Jakiela, Rafal
Journal of Alloys and Compounds, Vol. 747
DOI: 10.1016/j.jallcom.2018.02.270

Polarization-Induced Zener Tunnel Junctions in Wide-Band-Gap Heterostructures
journal, July 2009

Simon, John; Zhang, Ze; Goodman, Kevin
Physical Review Letters, Vol. 103, Issue 2
DOI: 10.1103/PhysRevLett.103.026801

Integrated multilayer GaAs lasers separated by tunnel junctions
journal, September 1982

van der Ziel, J. P.; Tsang, W. T.
Applied Physics Letters, Vol. 41, Issue 6
DOI: 10.1063/1.93585

Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes: Physics-based modeling and experimental implications of TAT in InGaN/GaN LEDs
journal, February 2015

Mandurrino, Marco; Verzellesi, Giovanni; Goano, Michele
physica status solidi (a), Vol. 212, Issue 5
DOI: 10.1002/pssa.201431743

High-Frequency Negative-Resistance Circuit Principles for Esaki Diode Applications
journal, May 1960

Hines, M. E.
Bell System Technical Journal, Vol. 39, Issue 3
DOI: 10.1002/j.1538-7305.1960.tb03933.x

Thermal Annealing Effects on P-Type Mg-Doped GaN Films
journal, February 1992

Nakamura, Shuji; Mukai, Takashi; Senoh, Masayuki
Japanese Journal of Applied Physics, Vol. 31, Issue Part 2, No. 2B
DOI: 10.1143/JJAP.31.L139

Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition
journal, December 2017

Hwang, David; Mughal, Asad J.; Wong, Matthew S.
Applied Physics Express, Vol. 11, Issue 1
DOI: 10.7567/APEX.11.012102

Multi-color light emitting diode using polarization-induced tunnel junctions
journal, June 2007

Grundmann, Michael J.; Mishra, Umesh K.
physica status solidi (c), Vol. 4, Issue 7
DOI: 10.1002/pssc.200675000

Nitride-based stacked laser diodes with a tunnel junction
journal, November 2017

Okawara, Satoru; Aoki, Yuta; Kuwabara, Masakazu
Applied Physics Express, Vol. 11, Issue 1
DOI: 10.7567/APEX.11.012701

A study on strong memory effects for Mg doping in GaN metalorganic chemical vapor deposition
journal, December 1994

Ohba, Y.; Hatano, A.
Journal of Crystal Growth, Vol. 145, Issue 1-4
DOI: 10.1016/0022-0248(94)91053-7

Double Heterostructure GaAs Tunnel Junction for a AlGaAs/GaAs Tandem Solar Cell
journal, February 1988

Sugiura, Hideo; Amano, Chikao; Yamamoto, Akio
Japanese Journal of Applied Physics, Vol. 27, Issue Part 1, No. 2
DOI: 10.1143/JJAP.27.269

Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation
journal, September 2013

Fischer, A. M.; Wei, Y. O.; Ponce, F. A.
Applied Physics Letters, Vol. 103, Issue 13
DOI: 10.1063/1.4822122

Demonstration of forward inter-band tunneling in GaN by polarization engineering
journal, December 2011

Krishnamoorthy, Sriram; Park, Pil Sung; Rajan, Siddharth
Applied Physics Letters, Vol. 99, Issue 23
DOI: 10.1063/1.3666862

Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN
journal, August 2012

Gunning, Brendan; Lowder, Jonathan; Moseley, Michael
Applied Physics Letters, Vol. 101, Issue 8
DOI: 10.1063/1.4747466

Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions
journal, May 2001

Jeon, Seong-Ran; Song, Young-Ho; Jang, Ho-Jin
Applied Physics Letters, Vol. 78, Issue 21
DOI: 10.1063/1.1374483

InGaN/GaN tunnel-injection blue light-emitting diodes
journal, June 2002

Wen, T. C.; Chang, S. J.; Wu, L. W.
IEEE Transactions on Electron Devices, Vol. 49, Issue 6
DOI: 10.1109/TED.2002.1003762

The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes
journal, February 2009

Zhu, Di; Xu, Jiuru; Noemaun, Ahmed N.
Applied Physics Letters, Vol. 94, Issue 8
DOI: 10.1063/1.3089687

Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
journal, January 2003

Xing, Huili; Green, Daniel S.; Yu, Haijiang
Japanese Journal of Applied Physics, Vol. 42, Issue Part 1, No. 1
DOI: 10.1143/JJAP.42.50

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN
journal, January 2015

Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.
Journal of Applied Physics, Vol. 117, Issue 4
DOI: 10.1063/1.4906464

Tunnel diode oscillator for 0.001 ppm measurements at low temperatures
journal, May 1975

Van Degrift, Craig T.
Review of Scientific Instruments, Vol. 46, Issue 5
DOI: 10.1063/1.1134272

True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy
journal, February 2018

Skierbiszewski, Czeslaw; Muziol, Grzegorz; Nowakowski-Szkudlarek, Krzesimir
Applied Physics Express, Vol. 11, Issue 3
DOI: 10.7567/APEX.11.034103

Polarization-engineered GaN/InGaN/GaN tunnel diodes
journal, November 2010

Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih
Applied Physics Letters, Vol. 97, Issue 20
DOI: 10.1063/1.3517481

Tunnel Mechanisms and Junction Characterization in III-V Tunnel Diodes
journal, March 1972

Andrews, A. M.; Korb, H. W.; Holonyak, N.
Physical Review B, Vol. 5, Issue 6
DOI: 10.1103/PhysRevB.5.2273

On p‐ type doping in GaN—acceptor binding energies
journal, August 1995

Fischer, S.; Wetzel, C.; Haller, E. E.
Applied Physics Letters, Vol. 67, Issue 9
DOI: 10.1063/1.114403

Theoretical evidence for efficient p-type doping of GaN using beryllium
journal, June 1997

Bernardini, Fabio; Fiorentini, Vincenzo; Bosin, Andrea
Applied Physics Letters, Vol. 70, Issue 22
DOI: 10.1063/1.118766

III-Nitride Double-Heterojunction Solar Cells With High In-Content InGaN Absorbing Layers: Comparison of Large-Area and Small-Area Devices
journal, March 2016

Fabien, Chloe A. M.; Maros, Aymeric; Honsberg, Christiana B.
IEEE Journal of Photovoltaics, Vol. 6, Issue 2
DOI: 10.1109/JPHOTOV.2015.2504790

Low-temperature growth of InGaN films over the entire composition range by MBE
journal, September 2015

Fabien, Chloe A. M.; Gunning, Brendan P.; Alan Doolittle, W.
Journal of Crystal Growth, Vol. 425
DOI: 10.1016/j.jcrysgro.2015.02.014

Transient atomic behavior and surface kinetics of GaN
journal, July 2009

Moseley, Michael; Billingsley, Daniel; Henderson, Walter
Journal of Applied Physics, Vol. 106, Issue 1
DOI: 10.1063/1.3148275

InGaN/GaN light-emitting diode with a polarization tunnel junction
journal, May 2013

Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu
Applied Physics Letters, Vol. 102, Issue 19
DOI: 10.1063/1.4806978

InGaN laser diode with metal-free laser ridge using n ⁺ -GaN contact layers
journal, May 2016

Malinverni, Marco; Tardy, Camille; Rossetti, Marco
Applied Physics Express, Vol. 9, Issue 6
DOI: 10.7567/APEX.9.061004

Low-resistance GaN tunnel homojunctions with 150 kA/cm ² current and repeatable negative differential resistance
journal, March 2016

Akyol, Fatih; Krishnamoorthy, Sriram; Zhang, Yuewei
Applied Physics Letters, Vol. 108, Issue 13
DOI: 10.1063/1.4944998

Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes
journal, August 2010

Bayram, C.; Vashaei, Z.; Razeghi, M.
Applied Physics Letters, Vol. 97, Issue 9
DOI: 10.1063/1.3484280

Multijunction GaInN-based solar cells using a tunnel junction
journal, March 2014

Kurokawa, Hironori; Kaga, Mitsuru; Goda, Tomomi
Applied Physics Express, Vol. 7, Issue 3
DOI: 10.7567/APEX.7.034104

Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes
journal, November 2010

Bayram, C.; Vashaei, Z.; Razeghi, M.
Applied Physics Letters, Vol. 97, Issue 18
DOI: 10.1063/1.3515418

Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In/sub 0.3/Ga/sub 0.7/N/GaN short-period superlattice tunneling contact layer
journal, October 2001

Sheu, J. K.; Tsai, J. M.; Shei, S. C.
IEEE Electron Device Letters, Vol. 22, Issue 10
DOI: 10.1109/55.954911

A review of the synthesis of reduced defect density InxGa1−xN for all indium compositions
journal, October 2017

Clinton, Evan A.; Vadiee, Ehsan; Fabien, Chloe A. M.
Solid-State Electronics, Vol. 136
DOI: 10.1016/j.sse.2017.06.020

Polarization-engineered GaN/InGaN/GaN tunnel diodes
text, January 2010

Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih
arXiv
DOI: 10.48550/arxiv.1008.4124

Demonstration of Forward Inter-band Tunneling in GaN by Polarization Engineering
text, January 2011

Krishnamoorthy, Sriram; Park, Pil Sung; Rajan, Siddharth
arXiv
DOI: 10.48550/arxiv.1108.4075

Works referencing / citing this record:

The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance
journal, August 2019

Vadiee, Ehsan; Clinton, Evan A.; Carpenter, Joe V.
Journal of Applied Physics, Vol. 126, Issue 8
DOI: 10.1063/1.5112498

Ultra-wide-bandgap AlGaN homojunction tunnel diodes with negative differential resistance
journal, August 2019

Clinton, Evan A.; Engel, Zachary; Vadiee, Ehsan
Applied Physics Letters, Vol. 115, Issue 8
DOI: 10.1063/1.5113503

Similar Records in DOE PAGES and OSTI.GOV collections:

The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance

Journal Article Vadiee, Ehsan ; Clinton, Evan A. ; Carpenter, Joe V. ; ... - Journal of Applied Physics

GaN p⁺⁺/n⁺⁺ tunnel junctions (TJs) with heavy bulk or delta Mg doping at the junction were grown via molecular beam epitaxy with a hysteresis-free and repeatable negative differential resistance (NDR). The TJ with Mg doping of 5.5 × 10²⁰ cm^-3 shows NDR at~1.8 V and a large current density of 3.4 KA/cm² at -1.0 V. Atomic resolution scanning transmission electron microscopy imaging showed no additional defects despite the doping exceeding the solubility limit in GaN allowing subsequent epitaxy of series-connected layers and devices. GaN homojunction TJs grown on bulk GaN showed an improved current density and NDR stability. In addition,more »« less
Cited by 7
https://doi.org/10.1063/1.5112498

Full Text Available
Ultra-wide-bandgap AlGaN homojunction tunnel diodes with negative differential resistance

Journal Article Clinton, Evan A. ; Engel, Zachary ; Vadiee, Ehsan ; ... - Applied Physics Letters

The power efficiencies of state-of-the-art Al_xGa_1-xN deep-ultraviolet (UV) emitters operating in the <300 nm wavelength region are currently limited to a few percent in part due to limitations in the series and contact resistance which result in excessive drive voltages. Al_xGa_1-xN tunnel contacts and tunnel junctions in deep-UV devices are a promising route toward increasing these efficiencies by improving the contact resistances, hole injection, and reducing optical absorption by removing undesirable p-GaN contact layers. However, due to doping inefficiencies, standalone tunnel diodes have not been realized in the form of homojunction Al_xGa_1-xN. In this work, Al_xGa_1-xN (0.19 ≤ x ≤more »« less
Cited by 20
https://doi.org/10.1063/1.5113503

Full Text Available
Fabrication and characterization of n-ZnO:Eu/p-ZnO:(Ag, N) homojunction by spray pyrolysis

Journal Article Swapna, R. ; Kumar, M.C. Santhosh, - Materials Research Bulletin

Graphical abstract: In this paper authors report the fabrication of ZnO homojunction by the deposition of 2 at.% Eu doped ZnO (n-ZnO:Eu) layer grown over the 4 at.% Ag–N dual acceptor doped ZnO (p-ZnO:(Ag, N)) layer by spray pyrolysis technique. The as-grown n-type and p-type ZnO films on glass substrates have been characterized by Hall measurements, X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), UV–vis and luminescence spectroscopy techniques. Hall measurement shows that 4 at.% ZnO:(Ag, N) film exhibits p-type conductivity with high hole concentration of 2.17 × 10{sup 18} cm{sup −3} and n-type conductivity is observed in the ZnO:Eu film.more »« less
https://doi.org/10.1016/J.MATERRESBULL.2013.08.045
InGaN based micro light emitting diodes featuring a buried GaN tunnel junction

Journal Article Malinverni, M., E-mail: marco.malinverni@epfl.ch ; Martin, D. ; Grandjean, N. - Applied Physics Letters

GaN tunnel junctions (TJs) are grown by ammonia molecular beam epitaxy. High doping levels are achieved with a net acceptor concentration close to ∼10{sup 20 }cm{sup −3}, thanks to the low growth temperature. This allows for the realization of p-n junctions with ultrathin depletion width enabling efficient interband tunneling. n-p-n structures featuring such a TJ exhibit low leakage current densities, e.g., <5 × 10{sup −5} A cm{sup −2} at reverse bias of 10 V. Under forward bias, the voltage is 3.3 V and 4.8 V for current densities of 20 A cm{sup −2} and 2000 A cm{sup −2}, respectively. The specific series resistance of the whole device ismore »« less
https://doi.org/10.1063/1.4928037
All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junctions

Journal Article Hasan, Syed M. N. ; Gunning, Brendan P. ; J.-Eddine, Zane ; ... - Journal of Physics. D, Applied Physics

In this work, we carefully investigate three important effects including postgrowth activation annealing, delta (δ) dose and magnesium (Mg) buildup delay as well as experimentally demonstrate their influence on the electrical properties of GaN homojunction p–n diodes with a tunnel junction (TJ). The diodes were monolithically grown by metalorganic chemical vapor deposition (MOCVD) in a single growth step. By optimizing the annealing parameters for Mg activation, δ-dose for both donors and acceptors at TJ interfaces, and p⁺-GaN layer thickness, a significant improvement in tunneling properties is achieved. For the TJs embedded within the continuously-grown, all-MOCVD GaN diode structures, ultra-low voltagemore »« less
https://doi.org/10.1088/1361-6463/abdb0f

Full Text Available

Similar Records

Title: Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts

Abstract

Citation Formats

Observation and control of the surface kinetics of InGaN for the elimination of phase separation journal, July 2012

Hydrogen diffusion in GaN:Mg and GaN:Si journal, May 2018

Polarization-Induced Zener Tunnel Junctions in Wide-Band-Gap Heterostructures journal, July 2009

Integrated multilayer GaAs lasers separated by tunnel junctions journal, September 1982

Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes: Physics-based modeling and experimental implications of TAT in InGaN/GaN LEDs journal, February 2015

High-Frequency Negative-Resistance Circuit Principles for Esaki Diode Applications journal, May 1960

Thermal Annealing Effects on P-Type Mg-Doped GaN Films journal, February 1992

Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition journal, December 2017

Multi-color light emitting diode using polarization-induced tunnel junctions journal, June 2007

Nitride-based stacked laser diodes with a tunnel junction journal, November 2017

A study on strong memory effects for Mg doping in GaN metalorganic chemical vapor deposition journal, December 1994

Double Heterostructure GaAs Tunnel Junction for a AlGaAs/GaAs Tandem Solar Cell journal, February 1988

Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation journal, September 2013

Demonstration of forward inter-band tunneling in GaN by polarization engineering journal, December 2011

Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN journal, August 2012

Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions journal, May 2001

InGaN/GaN tunnel-injection blue light-emitting diodes journal, June 2002

The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes journal, February 2009

Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition journal, January 2003

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN journal, January 2015

Tunnel diode oscillator for 0.001 ppm measurements at low temperatures journal, May 1975

True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy journal, February 2018

Polarization-engineered GaN/InGaN/GaN tunnel diodes journal, November 2010

Tunnel Mechanisms and Junction Characterization in III-V Tunnel Diodes journal, March 1972

On p‐ type doping in GaN—acceptor binding energies journal, August 1995

Theoretical evidence for efficient p-type doping of GaN using beryllium journal, June 1997

III-Nitride Double-Heterojunction Solar Cells With High In-Content InGaN Absorbing Layers: Comparison of Large-Area and Small-Area Devices journal, March 2016

Low-temperature growth of InGaN films over the entire composition range by MBE journal, September 2015

Transient atomic behavior and surface kinetics of GaN journal, July 2009

InGaN/GaN light-emitting diode with a polarization tunnel junction journal, May 2013

InGaN laser diode with metal-free laser ridge using n + -GaN contact layers journal, May 2016

Low-resistance GaN tunnel homojunctions with 150 kA/cm 2 current and repeatable negative differential resistance journal, March 2016

Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes journal, August 2010

Multijunction GaInN-based solar cells using a tunnel junction journal, March 2014

Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes journal, November 2010

Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In/sub 0.3/Ga/sub 0.7/N/GaN short-period superlattice tunneling contact layer journal, October 2001

A review of the synthesis of reduced defect density InxGa1−xN for all indium compositions journal, October 2017

Polarization-engineered GaN/InGaN/GaN tunnel diodes text, January 2010

Demonstration of Forward Inter-band Tunneling in GaN by Polarization Engineering text, January 2011

The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance journal, August 2019

Ultra-wide-bandgap AlGaN homojunction tunnel diodes with negative differential resistance journal, August 2019

Observation and control of the surface kinetics of InGaN for the elimination of phase separation
journal, July 2012

Hydrogen diffusion in GaN:Mg and GaN:Si
journal, May 2018

Polarization-Induced Zener Tunnel Junctions in Wide-Band-Gap Heterostructures
journal, July 2009

Integrated multilayer GaAs lasers separated by tunnel junctions
journal, September 1982

Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes: Physics-based modeling and experimental implications of TAT in InGaN/GaN LEDs
journal, February 2015

High-Frequency Negative-Resistance Circuit Principles for Esaki Diode Applications
journal, May 1960

Thermal Annealing Effects on P-Type Mg-Doped GaN Films
journal, February 1992

Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition
journal, December 2017

Multi-color light emitting diode using polarization-induced tunnel junctions
journal, June 2007

Nitride-based stacked laser diodes with a tunnel junction
journal, November 2017

A study on strong memory effects for Mg doping in GaN metalorganic chemical vapor deposition
journal, December 1994

Double Heterostructure GaAs Tunnel Junction for a AlGaAs/GaAs Tandem Solar Cell
journal, February 1988

Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation
journal, September 2013

Demonstration of forward inter-band tunneling in GaN by polarization engineering
journal, December 2011

Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN
journal, August 2012

Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions
journal, May 2001

InGaN/GaN tunnel-injection blue light-emitting diodes
journal, June 2002

The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes
journal, February 2009

Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
journal, January 2003

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN
journal, January 2015

Tunnel diode oscillator for 0.001 ppm measurements at low temperatures
journal, May 1975

True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy
journal, February 2018

Polarization-engineered GaN/InGaN/GaN tunnel diodes
journal, November 2010

Tunnel Mechanisms and Junction Characterization in III-V Tunnel Diodes
journal, March 1972

On p‐ type doping in GaN—acceptor binding energies
journal, August 1995

Theoretical evidence for efficient p-type doping of GaN using beryllium
journal, June 1997

III-Nitride Double-Heterojunction Solar Cells With High In-Content InGaN Absorbing Layers: Comparison of Large-Area and Small-Area Devices
journal, March 2016

Low-temperature growth of InGaN films over the entire composition range by MBE
journal, September 2015

Transient atomic behavior and surface kinetics of GaN
journal, July 2009

InGaN/GaN light-emitting diode with a polarization tunnel junction
journal, May 2013

InGaN laser diode with metal-free laser ridge using n ⁺ -GaN contact layers
journal, May 2016

Low-resistance GaN tunnel homojunctions with 150 kA/cm ² current and repeatable negative differential resistance
journal, March 2016

Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes
journal, August 2010

Multijunction GaInN-based solar cells using a tunnel junction
journal, March 2014

Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes
journal, November 2010

Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In/sub 0.3/Ga/sub 0.7/N/GaN short-period superlattice tunneling contact layer
journal, October 2001

A review of the synthesis of reduced defect density InxGa1−xN for all indium compositions
journal, October 2017

Polarization-engineered GaN/InGaN/GaN tunnel diodes
text, January 2010

Demonstration of Forward Inter-band Tunneling in GaN by Polarization Engineering
text, January 2011

The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance
journal, August 2019

Ultra-wide-bandgap AlGaN homojunction tunnel diodes with negative differential resistance
journal, August 2019