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Title: All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junctions

Abstract

In this work, we carefully investigate three important effects including postgrowth activation annealing, delta (δ) dose and magnesium (Mg) buildup delay as well as experimentally demonstrate their influence on the electrical properties of GaN homojunction p–n diodes with a tunnel junction (TJ). The diodes were monolithically grown by metalorganic chemical vapor deposition (MOCVD) in a single growth step. By optimizing the annealing parameters for Mg activation, δ-dose for both donors and acceptors at TJ interfaces, and p+-GaN layer thickness, a significant improvement in tunneling properties is achieved. For the TJs embedded within the continuously-grown, all-MOCVD GaN diode structures, ultra-low voltage penalties of 158 mV and 490 mV are obtained at current densities of 20 A cm–2 and 100 A cm–2, respectively. The diodes with the engineered TJs show a record-low differential resistivity of 1.6 × 10–4 Ω cm2 at 5 kA cm–2.

Authors:
 [1];  [2];  [1];  [1];  [2];  [2];  [1]; ORCiD logo [2]
+ Show Author Affiliations
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. The Ohio State Univ., Columbus, OH (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Building Technologies Office
OSTI Identifier:
1765749
Report Number(s):
SAND-2021-1234J
Journal ID: ISSN 0022-3727; 693819
Grant/Contract Number:  
AC04-94AL85000; 31150; NA-0003525
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Physics. D, Applied Physics
Additional Journal Information:
Journal Volume: 54; Journal Issue: 15; Journal ID: ISSN 0022-3727
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; GaN; tunnel junction; MOCVD; delta dose; activation

Citation Formats

Hasan, Syed M. N., Gunning, Brendan P., J.-Eddine, Zane, Chandrasekar, Hareesh, Crawford, Mary H., Armstrong, Andrew, Rajan, Siddharth, and Arafin, Shamsul. All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junctions. United States: N. p., 2021. Web. doi:10.1088/1361-6463/abdb0f.
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Hasan, Syed M. N., Gunning, Brendan P., J.-Eddine, Zane, Chandrasekar, Hareesh, Crawford, Mary H., Armstrong, Andrew, Rajan, Siddharth, & Arafin, Shamsul. All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junctions. United States. https://doi.org/10.1088/1361-6463/abdb0f
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Hasan, Syed M. N., Gunning, Brendan P., J.-Eddine, Zane, Chandrasekar, Hareesh, Crawford, Mary H., Armstrong, Andrew, Rajan, Siddharth, and Arafin, Shamsul. Fri . "All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junctions". United States. https://doi.org/10.1088/1361-6463/abdb0f. https://www.osti.gov/servlets/purl/1765749.
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@article{osti_1765749,
title = {All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junctions},
author = {Hasan, Syed M. N. and Gunning, Brendan P. and J.-Eddine, Zane and Chandrasekar, Hareesh and Crawford, Mary H. and Armstrong, Andrew and Rajan, Siddharth and Arafin, Shamsul},
abstractNote = {In this work, we carefully investigate three important effects including postgrowth activation annealing, delta (δ) dose and magnesium (Mg) buildup delay as well as experimentally demonstrate their influence on the electrical properties of GaN homojunction p–n diodes with a tunnel junction (TJ). The diodes were monolithically grown by metalorganic chemical vapor deposition (MOCVD) in a single growth step. By optimizing the annealing parameters for Mg activation, δ-dose for both donors and acceptors at TJ interfaces, and p+-GaN layer thickness, a significant improvement in tunneling properties is achieved. For the TJs embedded within the continuously-grown, all-MOCVD GaN diode structures, ultra-low voltage penalties of 158 mV and 490 mV are obtained at current densities of 20 A cm–2 and 100 A cm–2, respectively. The diodes with the engineered TJs show a record-low differential resistivity of 1.6 × 10–4 Ω cm2 at 5 kA cm–2.},
doi = {10.1088/1361-6463/abdb0f},
journal = {Journal of Physics. D, Applied Physics},
number = 15,
volume = 54,
place = {United States},
year = {Fri Jan 29 00:00:00 EST 2021},
month = {Fri Jan 29 00:00:00 EST 2021}
}
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Works referenced in this record:

Hybrid tunnel junction contacts to III–nitride light-emitting diodes
journal, January 2016

  • Young, Erin C.; Yonkee, Benjamin P.; Wu, Feng
  • Applied Physics Express, Vol. 9, Issue 2
  • DOI: 10.7567/APEX.9.022102

Low resistance GaN/InGaN/GaN tunnel junctions
journal, March 2013

  • Krishnamoorthy, Sriram; Akyol, Fatih; Park, Pil Sung
  • Applied Physics Letters, Vol. 102, Issue 11
  • DOI: 10.1063/1.4796041

Effects of Mg pre-flow, memory, and diffusion on the growth of p-GaN with MOCVD (Conference Presentation)
conference, May 2017

  • Tu, Charng-Gan; Chen, Hao-Tsung; Chen, Sheng-Hung
  • Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI
  • DOI: 10.1117/12.2249540

All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications
journal, March 2017

  • Neugebauer, S.; Hoffmann, M. P.; Witte, H.
  • Applied Physics Letters, Vol. 110, Issue 10
  • DOI: 10.1063/1.4978268

Delta-doping optimization for high quality p-type GaN
journal, October 2008

  • Bayram, C.; Pau, J. L.; McClintock, R.
  • Journal of Applied Physics, Vol. 104, Issue 8
  • DOI: 10.1063/1.3000564

Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition
journal, October 1995

  • Götz, W.; Johnson, N. M.; Walker, J.
  • Applied Physics Letters, Vol. 67, Issue 18
  • DOI: 10.1063/1.114330

Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition
journal, December 2017

  • Hwang, David; Mughal, Asad J.; Wong, Matthew S.
  • Applied Physics Express, Vol. 11, Issue 1
  • DOI: 10.7567/APEX.11.012102

GaInN-based tunnel junctions with high InN mole fractions grown by MOVPE: GaInN-based tunnel junctions with high InN mole fractions
journal, January 2015

  • Minamikawa, Daichi; Ino, Masataka; Kawai, Shunsuke
  • physica status solidi (b), Vol. 252, Issue 5
  • DOI: 10.1002/pssb.201451507

A study on strong memory effects for Mg doping in GaN metalorganic chemical vapor deposition
journal, December 1994

Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact
journal, January 2016

  • Yonkee, Benjamin P.; Young, Erin C.; Lee, Changmin
  • Optics Express, Vol. 24, Issue 7
  • DOI: 10.1364/OE.24.007816

Activation of buried p-GaN in MOCVD-regrown vertical structures
journal, August 2018

  • Li, Wenshen; Nomoto, Kazuki; Lee, Kevin
  • Applied Physics Letters, Vol. 113, Issue 6
  • DOI: 10.1063/1.5041879

Ueber Diffusion
journal, January 1855

Demonstration of low resistance ohmic contacts to p-type (202̄1̄) GaN
journal, June 2015

  • Yonkee, Benjamin P.; Farrell, Robert M.; Leonard, John T.
  • Semiconductor Science and Technology, Vol. 30, Issue 7
  • DOI: 10.1088/0268-1242/30/7/075007

Theory of doping and defects in III–V nitrides
journal, June 1998

Fermi level dependence of hydrogen diffusivity in GaN
journal, September 2001

  • Polyakov, A. Y.; Smirnov, N. B.; Pearton, S. J.
  • Applied Physics Letters, Vol. 79, Issue 12
  • DOI: 10.1063/1.1404398

Fully transparent GaN homojunction tunnel junction-enabled cascaded blue LEDs
journal, August 2020

  • Jamal-Eddine, Zane; Hasan, Syed M. N.; Gunning, Brendan
  • Applied Physics Letters, Vol. 117, Issue 5
  • DOI: 10.1063/5.0015403

Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction
journal, November 2016

  • Yonkee, B. P.; Young, E. C.; DenBaars, S. P.
  • Applied Physics Letters, Vol. 109, Issue 19
  • DOI: 10.1063/1.4967501

The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance
journal, August 2019

  • Vadiee, Ehsan; Clinton, Evan A.; Carpenter, Joe V.
  • Journal of Applied Physics, Vol. 126, Issue 8
  • DOI: 10.1063/1.5112498

III-nitride ultraviolet light-emitting diodes with delta doping
journal, July 2003

  • Kim, K. H.; Li, J.; Jin, S. X.
  • Applied Physics Letters, Vol. 83, Issue 3
  • DOI: 10.1063/1.1593212

Inversion of wurtzite GaN(0001) by exposure to magnesium
journal, August 1999

  • Ramachandran, V.; Feenstra, R. M.; Sarney, W. L.
  • Applied Physics Letters, Vol. 75, Issue 6
  • DOI: 10.1063/1.124520

Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
journal, January 2003

  • Xing, Huili; Green, Daniel S.; Yu, Haijiang
  • Japanese Journal of Applied Physics, Vol. 42, Issue Part 1, No. 1
  • DOI: 10.1143/JJAP.42.50

Doping profiles in low resistive GaN tunnel junctions grown by metalorganic vapor phase epitaxy
journal, February 2019

  • Akatsuka, Yasuto; Iwayama, Sho; Takeuchi, Tetsuya
  • Applied Physics Express, Vol. 12, Issue 2
  • DOI: 10.7567/1882-0786/aafca8

Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED
journal, January 1991

Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop
journal, August 2013

  • Akyol, Fatih; Krishnamoorthy, Sriram; Rajan, Siddharth
  • Applied Physics Letters, Vol. 103, Issue 8
  • DOI: 10.1063/1.4819737

Quantitative investigation of the lateral diffusion of hydrogen in p-type GaN layers having NPN structures
journal, December 2018

  • Narita, Tetsuo; Tomita, Kazuyoshi; Yamada, Shinji
  • Applied Physics Express, Vol. 12, Issue 1
  • DOI: 10.7567/1882-0786/aaf418

Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
journal, March 1994

  • Nakamura, Shuji; Mukai, Takashi; Senoh, Masayuki
  • Applied Physics Letters, Vol. 64, Issue 13, p. 1687-1689
  • DOI: 10.1063/1.111832

600 V/ $1.7~\Omega$ Normally-Off GaN Vertical Trench Metal–Oxide–Semiconductor Field-Effect Transistor
journal, November 2016

Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction
journal, March 2018

  • Alhassan, Abdullah I.; Young, Erin C.; Alyamani, Ahmed Y.
  • Applied Physics Express, Vol. 11, Issue 4
  • DOI: 10.7567/APEX.11.042101

Magnesium segregation and the formation of pyramidal defects in p -GaN
journal, December 2002

  • Figge, Stephan; Kröger, Roland; Böttcher, Tim
  • Applied Physics Letters, Vol. 81, Issue 25
  • DOI: 10.1063/1.1527981

True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy
journal, February 2018

  • Skierbiszewski, Czeslaw; Muziol, Grzegorz; Nowakowski-Szkudlarek, Krzesimir
  • Applied Physics Express, Vol. 11, Issue 3
  • DOI: 10.7567/APEX.11.034103

Investigation of Mg δ -doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD
journal, August 2018

  • Lund, Cory; Agarwal, Anchal; Romanczyk, Brian
  • Semiconductor Science and Technology, Vol. 33, Issue 9
  • DOI: 10.1088/1361-6641/aad5cf

Diffusion, release, and uptake of hydrogen in magnesium-doped gallium nitride: Theory and experiment
journal, March 2001

  • Myers, S. M.; Wright, A. F.; Petersen, G. A.
  • Journal of Applied Physics, Vol. 89, Issue 6, p. 3195-3202
  • DOI: 10.1063/1.1347410

InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes
journal, October 2014

  • Krishnamoorthy, Sriram; Akyol, Fatih; Rajan, Siddharth
  • Applied Physics Letters, Vol. 105, Issue 14, Article No. 141104
  • DOI: 10.1063/1.4897342

Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions
journal, August 2013

  • Kuwano, Yuka; Kaga, Mitsuru; Morita, Takatoshi
  • Japanese Journal of Applied Physics, Vol. 52, Issue 8S
  • DOI: 10.7567/JJAP.52.08JK12

Mg Incorporation Efficiency in Pulsed MOCVD of N-Polar GaN:Mg
journal, May 2017

  • Marini, Jonathan; Mahaboob, Isra; Hogan, Kasey
  • Journal of Electronic Materials, Vol. 46, Issue 10
  • DOI: 10.1007/s11664-017-5602-x

InGaN/GaN light-emitting diode with a polarization tunnel junction
journal, May 2013

  • Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu
  • Applied Physics Letters, Vol. 102, Issue 19
  • DOI: 10.1063/1.4806978

Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping
journal, May 2003

  • Nakarmi, M. L.; Kim, K. H.; Li, J.
  • Applied Physics Letters, Vol. 82, Issue 18, p. 3041-3043
  • DOI: 10.1063/1.1559444

GaN:-Mg grown by MOVPE: Structural properties and their effect on the electronic and optical behavior
journal, January 2008

Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts
journal, June 2018

  • Clinton, Evan A.; Vadiee, Ehsan; Shen, Shyh-Chiang
  • Applied Physics Letters, Vol. 112, Issue 25
  • DOI: 10.1063/1.5035293

Hydrogen release from magnesium-doped GaN with clean ordered surfaces
journal, November 2003

  • Wampler, W. R.; Myers, S. M.
  • Journal of Applied Physics, Vol. 94, Issue 9
  • DOI: 10.1063/1.1616986
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