skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Graphene grown out of diamond

Abstract

Most applications of graphene need a suitable support substrate to present its excellent properties. But transferring graphene onto insulators or growing graphene on foreign substrates could cause properties diminishing. Here, we report the graphene growth directly out of diamond (111) by B doping, guided by first-principles calculations. The spontaneous graphene formation occurred due to the reconstruction of the diamond surface when the B doping density and profile are adequate. The resulting materials are defect free with high phase purity/carrier mobility, controllable layer number, and good uniformity, which can be potentially used directly for device fabrication, e.g., high-performance devices requiring good thermal conductivity.

Authors:
 [1];  [2];  [3];  [2];  [2];  [2];  [2];  [4]
  1. Chinese Academy of Sciences (CAS), Beijing (China). Inst. of Phyiscs, Beijing National Lab. for Condensed Matter Physics; Collaborative Innovation Center of Quantum Matter, Beijing (China); Univ. of Chinese Academy of Sciences, Beijing (China). School of Physical Sciences, CAS Key Lab. of Vacuum Physics
  2. Chinese Academy of Sciences (CAS), Beijing (China). Inst. of Phyiscs, Beijing National Lab. for Condensed Matter Physics
  3. Renmin Univ. of China, Beijing (China). Dept. of Physics
  4. Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Physics, Applied Physics, and Astronomy
Publication Date:
Research Org.:
Rensselaer Polytechnic Inst., Troy, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1535282
Grant/Contract Number:  
SC0002623
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 16; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; physics

Citation Formats

Gu, Changzhi, Li, Wuxia, Xu, Jing, Xu, Shicong, Lu, Chao, Xu, Lifang, Li, Junjie, and Zhang, Shengbai. Graphene grown out of diamond. United States: N. p., 2016. Web. doi:10.1063/1.4964710.
Gu, Changzhi, Li, Wuxia, Xu, Jing, Xu, Shicong, Lu, Chao, Xu, Lifang, Li, Junjie, & Zhang, Shengbai. Graphene grown out of diamond. United States. doi:10.1063/1.4964710.
Gu, Changzhi, Li, Wuxia, Xu, Jing, Xu, Shicong, Lu, Chao, Xu, Lifang, Li, Junjie, and Zhang, Shengbai. Wed . "Graphene grown out of diamond". United States. doi:10.1063/1.4964710. https://www.osti.gov/servlets/purl/1535282.
@article{osti_1535282,
title = {Graphene grown out of diamond},
author = {Gu, Changzhi and Li, Wuxia and Xu, Jing and Xu, Shicong and Lu, Chao and Xu, Lifang and Li, Junjie and Zhang, Shengbai},
abstractNote = {Most applications of graphene need a suitable support substrate to present its excellent properties. But transferring graphene onto insulators or growing graphene on foreign substrates could cause properties diminishing. Here, we report the graphene growth directly out of diamond (111) by B doping, guided by first-principles calculations. The spontaneous graphene formation occurred due to the reconstruction of the diamond surface when the B doping density and profile are adequate. The resulting materials are defect free with high phase purity/carrier mobility, controllable layer number, and good uniformity, which can be potentially used directly for device fabrication, e.g., high-performance devices requiring good thermal conductivity.},
doi = {10.1063/1.4964710},
journal = {Applied Physics Letters},
number = 16,
volume = 109,
place = {United States},
year = {2016},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 7 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

The superconductivity in boron-doped polycrystalline diamond thick films
journal, April 2006


High-speed graphene transistors with a self-aligned nanowire gate
journal, September 2010

  • Liao, Lei; Lin, Yung-Chen; Bao, Mingqiang
  • Nature, Vol. 467, Issue 7313
  • DOI: 10.1038/nature09405

Production, properties and potential of graphene
journal, July 2010


Coherent Generation of Photo-Thermo-Acoustic Wave from Graphene Sheets
journal, June 2015

  • Tian, Yichao; Tian, He; Wu, Y. L.
  • Scientific Reports, Vol. 5, Issue 1
  • DOI: 10.1038/srep10582

Transport characteristics of a single-layer graphene field-effect transistor grown on 4H-silicon carbide
journal, September 2010


Graphene-Nanodiamond Heterostructures and their application to High Current Devices
journal, September 2015

  • Zhao, Fang; Vrajitoarea, Andrei; Jiang, Qi
  • Scientific Reports, Vol. 5, Issue 1
  • DOI: 10.1038/srep13771

Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale
journal, July 2016

  • Berman, Diana; Deshmukh, Sanket A.; Narayanan, Badri
  • Nature Communications, Vol. 7, Issue 1
  • DOI: 10.1038/ncomms12099

The radiation hardness properties of γ-ray for SOD circuits fabricated on 4-inch SOD wafer
journal, March 2002


Properties of graphene produced by the high pressure–high temperature growth process
journal, January 2008

  • Parvizi, F.; Teweldebrhan, D.; Ghosh, S.
  • Micro & Nano Letters, Vol. 3, Issue 1
  • DOI: 10.1049/mnl:20070074

Special points for Brillouin-zone integrations
journal, June 1976

  • Monkhorst, Hendrik J.; Pack, James D.
  • Physical Review B, Vol. 13, Issue 12, p. 5188-5192
  • DOI: 10.1103/PhysRevB.13.5188

Electric Field Effect in Atomically Thin Carbon Films
journal, October 2004


Large yield production of high mobility freely suspended graphene electronic devices on a polydimethylglutarimide based organic polymer
journal, May 2011

  • Tombros, Nikolaos; Veligura, Alina; Junesch, Juliane
  • Journal of Applied Physics, Vol. 109, Issue 9
  • DOI: 10.1063/1.3579997

Thermal properties of graphene and nanostructured carbon materials
journal, August 2011

  • Balandin, Alexander A.
  • Nature Materials, Vol. 10, Issue 8, p. 569-581
  • DOI: 10.1038/nmat3064

Graphene-on-Diamond Devices with Increased Current-Carrying Capacity: Carbon sp2 -on-sp3 Technology
journal, February 2012

  • Yu, Jie; Liu, Guanxiong; Sumant, Anirudha V.
  • Nano Letters, Vol. 12, Issue 3, p. 1603-1608
  • DOI: 10.1021/nl204545q

Gate-dependent pseudospin mixing in graphene/boron nitride moiré superlattices
journal, August 2014

  • Shi, Zhiwen; Jin, Chenhao; Yang, Wei
  • Nature Physics, Vol. 10, Issue 10
  • DOI: 10.1038/nphys3075

Observation of Plasmarons in Quasi-Freestanding Doped Graphene
journal, May 2010


High-frequency, scaled graphene transistors on diamond-like carbon
journal, April 2011

  • Wu, Yanqing; Lin, Yu-ming; Bol, Ageeth A.
  • Nature, Vol. 472, Issue 7341
  • DOI: 10.1038/nature09979

Body-Centered Orthorhombic C 16 : A Novel Topological Node-Line Semimetal
journal, May 2016


100-GHz Transistors from Wafer-Scale Epitaxial Graphene
journal, February 2010

  • Lin, Y.-M.; Dimitrakopoulos, C.; Jenkins, K. A.
  • Science, Vol. 327, Issue 5966, p. 662-662
  • DOI: 10.1126/science.1184289

Ab initiomolecular dynamics for liquid metals
journal, January 1993


Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements
journal, June 1997

  • Look, D. C.; Molnar, R. J.
  • Applied Physics Letters, Vol. 70, Issue 25
  • DOI: 10.1063/1.119176

Graphite-like surface reconstructions on C{111} and their implication for n -type diamond
journal, November 2002


Raman spectroscopy in graphene
journal, April 2009


Correlation hole of the spin-polarized electron gas, with exact small-wave-vector and high-density scaling
journal, December 1991


Observation of an intrinsic bandgap and Landau level renormalization in graphene/boron-nitride heterostructures
journal, July 2014

  • Chen, Zhi-Guo; Shi, Zhiwen; Yang, Wei
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms5461

Electronic spin transport and spin precession in single graphene layers at room temperature
journal, July 2007

  • Tombros, Nikolaos; Jozsa, Csaba; Popinciuc, Mihaita
  • Nature, Vol. 448, Issue 7153, p. 571-574
  • DOI: 10.1038/nature06037

    Works referencing / citing this record:

    Anisotropy of Graphene Nanoflake Diamond Interface Frictional Properties
    journal, May 2019

    • Zhang, Ji; Osloub, Ehsan; Siddiqui, Fatima
    • Materials, Vol. 12, Issue 9
    • DOI: 10.3390/ma12091425

    The Flexible Lubrication Performance of Graphene Used in Diamond Interface as a Solid Lubricant: First-Principles Calculations
    journal, December 2019

    • Wang, Jianjun; Li, Lin; Yang, Wentao
    • Nanomaterials, Vol. 9, Issue 12
    • DOI: 10.3390/nano9121784