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Title: Growth and Isolation of Large Area Boron-Doped Nanocrystalline Diamond Sheets: A Route toward Diamond-on-Graphene Heterojunction

Journal Article · · Advanced Functional Materials
ORCiD logo [1];  [2];  [2];  [3];  [2];  [2];  [3];  [3];  [4];  [5]
  1. Gdańsk University of Technology (Poland); DOE/OSTI
  2. Gdańsk University of Technology (Poland)
  3. California Institute of Technology (CalTech), Pasadena, CA (United States)
  4. Univ. of California, Riverside, CA (United States)
  5. Univ. of Gdansk (Poland)
+ Show Author Affiliations

Many material device applications would benefit from thin diamond coatings, but current growth techniques, such as chemical vapor deposition (CVD) or atomic layer deposition require high substrate and gas-phase temperatures that would destroy the device being coated. The development of freestanding, thin boron-doped diamond nanosheets grown on tantalum foil substrates via microwave plasma-assisted CVD is reported. These diamond sheets (measuring up to 4 × 5 mm in planar area, and 300–600 nm in thickness) are removed from the substrate using mechanical exfoliation and then transferred to other substrates, including Si/SiO2 and graphene. The electronic properties of the resulting diamond nanosheets and their dependence on the free-standing growth, the mechanical exfoliation and transfer processes, and ultimately on their composition are characterized. To support this, a prototypical diamond nanosheet–graphene field effect transistor-like (DNGfet) device is developed and its electronic transport properties are studied as a function of temperature. The resulting DNGfet device exhibits thermally activated transport (thermionic conductance) above 50 K. Below 50 K a transition to variable range hopping is observed. Finally, these findings demonstrate the first step towards a low-temperature diamond-based transistor.

Research Organization:
University of Southern California, Los Angeles, CA (United States)
Sponsoring Organization:
Polish National Science Centre (NCN); USDOE; USDOE Office of Science (SC)
Grant/Contract Number:
SC0014607
OSTI ID:
1612242
Journal Information:
Advanced Functional Materials, Journal Name: Advanced Functional Materials Journal Issue: 3 Vol. 29; ISSN 1616-301X
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English

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  • Prawer, Steven; Nemanich, Robert J.
  • Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences, Vol. 362, Issue 1824 https://doi.org/10.1098/rsta.2004.1451
journal September 2004
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36 MATERIALS SCIENCE
carrier transfer
chemical vapor deposition
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freestanding diamond nanosheets
graphene
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physics
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