Graphene grown out of diamond
Abstract
Most applications of graphene need a suitable support substrate to present its excellent properties. But transferring graphene onto insulators or growing graphene on foreign substrates could cause properties diminishing. Here, we report the graphene growth directly out of diamond (111) by B doping, guided by first-principles calculations. The spontaneous graphene formation occurred due to the reconstruction of the diamond surface when the B doping density and profile are adequate. The resulting materials are defect free with high phase purity/carrier mobility, controllable layer number, and good uniformity, which can be potentially used directly for device fabrication, e.g., high-performance devices requiring good thermal conductivity.
- Authors:
-
- Chinese Academy of Sciences (CAS), Beijing (China). Inst. of Phyiscs, Beijing National Lab. for Condensed Matter Physics; Collaborative Innovation Center of Quantum Matter, Beijing (China); Univ. of Chinese Academy of Sciences, Beijing (China). School of Physical Sciences, CAS Key Lab. of Vacuum Physics
- Chinese Academy of Sciences (CAS), Beijing (China). Inst. of Phyiscs, Beijing National Lab. for Condensed Matter Physics
- Renmin Univ. of China, Beijing (China). Dept. of Physics
- Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Physics, Applied Physics, and Astronomy
- Publication Date:
- Research Org.:
- Rensselaer Polytechnic Inst., Troy, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1535282
- Grant/Contract Number:
- SC0002623
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 109; Journal Issue: 16; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; physics
Citation Formats
Gu, Changzhi, Li, Wuxia, Xu, Jing, Xu, Shicong, Lu, Chao, Xu, Lifang, Li, Junjie, and Zhang, Shengbai. Graphene grown out of diamond. United States: N. p., 2016.
Web. doi:10.1063/1.4964710.
Gu, Changzhi, Li, Wuxia, Xu, Jing, Xu, Shicong, Lu, Chao, Xu, Lifang, Li, Junjie, & Zhang, Shengbai. Graphene grown out of diamond. United States. https://doi.org/10.1063/1.4964710
Gu, Changzhi, Li, Wuxia, Xu, Jing, Xu, Shicong, Lu, Chao, Xu, Lifang, Li, Junjie, and Zhang, Shengbai. Wed .
"Graphene grown out of diamond". United States. https://doi.org/10.1063/1.4964710. https://www.osti.gov/servlets/purl/1535282.
@article{osti_1535282,
title = {Graphene grown out of diamond},
author = {Gu, Changzhi and Li, Wuxia and Xu, Jing and Xu, Shicong and Lu, Chao and Xu, Lifang and Li, Junjie and Zhang, Shengbai},
abstractNote = {Most applications of graphene need a suitable support substrate to present its excellent properties. But transferring graphene onto insulators or growing graphene on foreign substrates could cause properties diminishing. Here, we report the graphene growth directly out of diamond (111) by B doping, guided by first-principles calculations. The spontaneous graphene formation occurred due to the reconstruction of the diamond surface when the B doping density and profile are adequate. The resulting materials are defect free with high phase purity/carrier mobility, controllable layer number, and good uniformity, which can be potentially used directly for device fabrication, e.g., high-performance devices requiring good thermal conductivity.},
doi = {10.1063/1.4964710},
journal = {Applied Physics Letters},
number = 16,
volume = 109,
place = {United States},
year = {Wed Oct 19 00:00:00 EDT 2016},
month = {Wed Oct 19 00:00:00 EDT 2016}
}
Web of Science
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Works referencing / citing this record:
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