Temperature-modulated electronic structure of graphene on SiC: Possible roles of electron-electron interaction and strain
Abstract
We have iobserved the electron band structure of graphene epitaxially grown on an SiC substrate using angle-resolved photoemission spectroscopy. The conical energy spectrum of graphene exhibits a minimum slope at ~50 K, which is accompanied by the minimum separation between its two branches. These observations provide a viable route towards the engineering of the electronic properties of graphene using temperature, while the latter suggests a possible evidence of gap engineering via strain induced by the substrate and modulated by temperature.
- Authors:
-
[1];
[2]
- Pusan National Univ., Busan (South Korea)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC); National Research Foundation of Korea (NRF)
- OSTI Identifier:
- 1530310
- Alternate Identifier(s):
- OSTI ID: 1411480
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 111; Journal Issue: 23; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE
Citation Formats
Hwang, Choongyu, Hwang, Jinwoong, Lee, Ji-Eun, Denlinger, Jonathan, and Mo, Sung-Kwan. Temperature-modulated electronic structure of graphene on SiC: Possible roles of electron-electron interaction and strain. United States: N. p., 2017.
Web. doi:10.1063/1.4986425.
Hwang, Choongyu, Hwang, Jinwoong, Lee, Ji-Eun, Denlinger, Jonathan, & Mo, Sung-Kwan. Temperature-modulated electronic structure of graphene on SiC: Possible roles of electron-electron interaction and strain. United States. https://doi.org/10.1063/1.4986425
Hwang, Choongyu, Hwang, Jinwoong, Lee, Ji-Eun, Denlinger, Jonathan, and Mo, Sung-Kwan. Wed .
"Temperature-modulated electronic structure of graphene on SiC: Possible roles of electron-electron interaction and strain". United States. https://doi.org/10.1063/1.4986425. https://www.osti.gov/servlets/purl/1530310.
@article{osti_1530310,
title = {Temperature-modulated electronic structure of graphene on SiC: Possible roles of electron-electron interaction and strain},
author = {Hwang, Choongyu and Hwang, Jinwoong and Lee, Ji-Eun and Denlinger, Jonathan and Mo, Sung-Kwan},
abstractNote = {We have iobserved the electron band structure of graphene epitaxially grown on an SiC substrate using angle-resolved photoemission spectroscopy. The conical energy spectrum of graphene exhibits a minimum slope at ~50 K, which is accompanied by the minimum separation between its two branches. These observations provide a viable route towards the engineering of the electronic properties of graphene using temperature, while the latter suggests a possible evidence of gap engineering via strain induced by the substrate and modulated by temperature.},
doi = {10.1063/1.4986425},
journal = {Applied Physics Letters},
number = 23,
volume = 111,
place = {United States},
year = {Wed Dec 06 00:00:00 EST 2017},
month = {Wed Dec 06 00:00:00 EST 2017}
}
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Figures / Tables:
Figure 1: (a) An LEED image of graphene on an SiC(0001) substrate taken at 98.8 eV. The white circle denotes graphene 1 × 1 LEED pattern in addition to the 6$\sqrt{3}$ × 6$\sqrt{3}$ phase corresponding to the graphene/substrate superstructure. (b) ARPES intensity maps of graphene on an SiC(0001) substrate takenmore »
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