Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)

doi:https://doi.org/10.1134/S1063782617080073

Title: Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)

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Abstract

The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6H-SiC substrate in an argon environment are studied by Raman spectroscopy, atomic-force microscopy, the low-energy electron diffraction method, X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy and X-ray absorption spectroscopy at the carbon K edge. It is shown that the results of a systematic integrated study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films with a small fraction of bilayer graphene inclusions.

Authors:

Usachov, D. Yu. ^[1]; Lebedev, S. P.; Smirnov, A. N.; Levitskii, V. S.; Eliseyev, I. A.; Alekseev, P. A.; Dunaevskiy, M. S. ^[2]; Vilkov, O. Yu.; Rybkin, A. G. ^[1]; Lebedev, A. A. ^[2]

Saint Petersburg State University (Russian Federation)
Russian Academy of Sciences, Ioffe Institute (Russian Federation)

Publication Date:: 2017-08-15

OSTI Identifier:: 22756417

Resource Type:: Journal Article

Journal Name:: Semiconductors

Additional Journal Information:: Journal Volume: 51; Journal Issue: 8; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; ABLATION; ABSORPTION SPECTROSCOPY; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DIFFRACTION METHODS; ELECTRON DIFFRACTION; ELECTRONIC STRUCTURE; FILMS; GRAPHENE; RAMAN SPECTROSCOPY; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats


                    Davydov, V. Yu., E-mail: valery.davydov@mail.ioffe.ru, Usachov, D. Yu., Lebedev, S. P., Smirnov, A. N., Levitskii, V. S., Eliseyev, I. A., Alekseev, P. A., Dunaevskiy, M. S., Vilkov, O. Yu., Rybkin, A. G., and Lebedev, A. A. Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001).  United States: N. p., 2017. 
        Web.  doi:10.1134/S1063782617080073.

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                    Davydov, V. Yu., E-mail: valery.davydov@mail.ioffe.ru, Usachov, D. Yu., Lebedev, S. P., Smirnov, A. N., Levitskii, V. S., Eliseyev, I. A., Alekseev, P. A., Dunaevskiy, M. S., Vilkov, O. Yu., Rybkin, A. G., & Lebedev, A. A. Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001).  United States.  https://doi.org/10.1134/S1063782617080073

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                    Davydov, V. Yu., E-mail: valery.davydov@mail.ioffe.ru, Usachov, D. Yu., Lebedev, S. P., Smirnov, A. N., Levitskii, V. S., Eliseyev, I. A., Alekseev, P. A., Dunaevskiy, M. S., Vilkov, O. Yu., Rybkin, A. G., and Lebedev, A. A. Tue .  
        "Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)".  United States.  https://doi.org/10.1134/S1063782617080073.

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@article{osti_22756417,

  title        = {Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)},

  author       = {Davydov, V. Yu., E-mail: valery.davydov@mail.ioffe.ru and Usachov, D. Yu. and Lebedev, S. P. and Smirnov, A. N. and Levitskii, V. S. and Eliseyev, I. A. and Alekseev, P. A. and Dunaevskiy, M. S. and Vilkov, O. Yu. and Rybkin, A. G. and Lebedev, A. A.},

  abstractNote = {The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6H-SiC substrate in an argon environment are studied by Raman spectroscopy, atomic-force microscopy, the low-energy electron diffraction method, X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy and X-ray absorption spectroscopy at the carbon K edge. It is shown that the results of a systematic integrated study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films with a small fraction of bilayer graphene inclusions.},

  doi          = {10.1134/S1063782617080073},

  url          = {https://www.osti.gov/biblio/22756417},
  journal      = {Semiconductors},

  issn         = {1063-7826},

  number       = 8,

  volume       = 51,

  place        = {United States},

  year         = {2017},

  month        = {8}

}

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https://doi.org/10.1134/S1063782617080073

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