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Title: Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)

Abstract

The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6H-SiC substrate in an argon environment are studied by Raman spectroscopy, atomic-force microscopy, the low-energy electron diffraction method, X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy and X-ray absorption spectroscopy at the carbon K edge. It is shown that the results of a systematic integrated study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films with a small fraction of bilayer graphene inclusions.

Authors:
 [1];  [2]; ; ; ; ; ;  [1]; ;  [2];  [1]
  1. Russian Academy of Sciences, Ioffe Institute (Russian Federation)
  2. Saint Petersburg State University (Russian Federation)
Publication Date:
OSTI Identifier:
22756417
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 51; Journal Issue: 8; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABLATION; ABSORPTION SPECTROSCOPY; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DIFFRACTION METHODS; ELECTRON DIFFRACTION; ELECTRONIC STRUCTURE; FILMS; GRAPHENE; RAMAN SPECTROSCOPY; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Davydov, V. Yu., E-mail: valery.davydov@mail.ioffe.ru, Usachov, D. Yu., Lebedev, S. P., Smirnov, A. N., Levitskii, V. S., Eliseyev, I. A., Alekseev, P. A., Dunaevskiy, M. S., Vilkov, O. Yu., Rybkin, A. G., and Lebedev, A. A. Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001). United States: N. p., 2017. Web. doi:10.1134/S1063782617080073.
Davydov, V. Yu., E-mail: valery.davydov@mail.ioffe.ru, Usachov, D. Yu., Lebedev, S. P., Smirnov, A. N., Levitskii, V. S., Eliseyev, I. A., Alekseev, P. A., Dunaevskiy, M. S., Vilkov, O. Yu., Rybkin, A. G., & Lebedev, A. A. Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001). United States. doi:10.1134/S1063782617080073.
Davydov, V. Yu., E-mail: valery.davydov@mail.ioffe.ru, Usachov, D. Yu., Lebedev, S. P., Smirnov, A. N., Levitskii, V. S., Eliseyev, I. A., Alekseev, P. A., Dunaevskiy, M. S., Vilkov, O. Yu., Rybkin, A. G., and Lebedev, A. A. Tue . "Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)". United States. doi:10.1134/S1063782617080073.
@article{osti_22756417,
title = {Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)},
author = {Davydov, V. Yu., E-mail: valery.davydov@mail.ioffe.ru and Usachov, D. Yu. and Lebedev, S. P. and Smirnov, A. N. and Levitskii, V. S. and Eliseyev, I. A. and Alekseev, P. A. and Dunaevskiy, M. S. and Vilkov, O. Yu. and Rybkin, A. G. and Lebedev, A. A.},
abstractNote = {The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6H-SiC substrate in an argon environment are studied by Raman spectroscopy, atomic-force microscopy, the low-energy electron diffraction method, X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy and X-ray absorption spectroscopy at the carbon K edge. It is shown that the results of a systematic integrated study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films with a small fraction of bilayer graphene inclusions.},
doi = {10.1134/S1063782617080073},
journal = {Semiconductors},
issn = {1063-7826},
number = 8,
volume = 51,
place = {United States},
year = {2017},
month = {8}
}