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Title: The correlation of epitaxial graphene properties and morphology of SiC (0001)

Abstract

The electronic properties of epitaxial graphene (EG) on SiC (0001) depend sensitively on the surface morphology of SiC substrate. Here, 2–3 layers of graphene were grown on on-axis 6H-SiC with different step densities realized through controlling growth temperature and ambient pressure. We show that epitaxial graphene on SiC (0001) with low step density and straight step edge possesses fewer point defects laying mostly on step edges and higher carrier mobility. A relationship between step density and EG mobility is established. The linear scan of Raman spectra combined with the atomic force microscopy morphology images revealed that the Raman fingerprint peaks are nearly the same on terraces, but shift significantly while cross step edges, suggesting the graphene is not homogeneous in strain and carrier concentration over terraces and step edges of substrates. Thus, control morphology of epitaxial graphene on SiC (0001) is a simple and effective method to pursue optimal route for high quality graphene and will be helpful to prepare wafer sized graphene for device applications.

Authors:
; ; ; ; ;  [1];  [2]
  1. Research and Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
  2. Nanoscale Physics and Devices Laboratory, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
Publication Date:
OSTI Identifier:
22275598
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 115; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER MOBILITY; CONCENTRATION RATIO; CORRELATIONS; EPITAXY; GRAPHENE; IMAGES; LAYERS; MICROSCOPY; MORPHOLOGY; POINT DEFECTS; RAMAN SPECTRA; SILICON CARBIDES; STRAINS; SUBSTRATES; SURFACES

Citation Formats

Guo, Y., Guo, L. W., E-mail: lwguo@iphy.ac.cn, E-mail: xlchen@iphy.ac.cn, Huang, J., Jia, Y. P., Lin, J. J., Lu, W., Li, Z. L., Yang, R., Chen, X. L., E-mail: lwguo@iphy.ac.cn, E-mail: xlchen@iphy.ac.cn, and Collaborative Innovation Center of Quantum Matter, Beijing 100190. The correlation of epitaxial graphene properties and morphology of SiC (0001). United States: N. p., 2014. Web. doi:10.1063/1.4863796.
Guo, Y., Guo, L. W., E-mail: lwguo@iphy.ac.cn, E-mail: xlchen@iphy.ac.cn, Huang, J., Jia, Y. P., Lin, J. J., Lu, W., Li, Z. L., Yang, R., Chen, X. L., E-mail: lwguo@iphy.ac.cn, E-mail: xlchen@iphy.ac.cn, & Collaborative Innovation Center of Quantum Matter, Beijing 100190. The correlation of epitaxial graphene properties and morphology of SiC (0001). United States. https://doi.org/10.1063/1.4863796
Guo, Y., Guo, L. W., E-mail: lwguo@iphy.ac.cn, E-mail: xlchen@iphy.ac.cn, Huang, J., Jia, Y. P., Lin, J. J., Lu, W., Li, Z. L., Yang, R., Chen, X. L., E-mail: lwguo@iphy.ac.cn, E-mail: xlchen@iphy.ac.cn, and Collaborative Innovation Center of Quantum Matter, Beijing 100190. Tue . "The correlation of epitaxial graphene properties and morphology of SiC (0001)". United States. https://doi.org/10.1063/1.4863796.
@article{osti_22275598,
title = {The correlation of epitaxial graphene properties and morphology of SiC (0001)},
author = {Guo, Y. and Guo, L. W., E-mail: lwguo@iphy.ac.cn, E-mail: xlchen@iphy.ac.cn and Huang, J. and Jia, Y. P. and Lin, J. J. and Lu, W. and Li, Z. L. and Yang, R. and Chen, X. L., E-mail: lwguo@iphy.ac.cn, E-mail: xlchen@iphy.ac.cn and Collaborative Innovation Center of Quantum Matter, Beijing 100190},
abstractNote = {The electronic properties of epitaxial graphene (EG) on SiC (0001) depend sensitively on the surface morphology of SiC substrate. Here, 2–3 layers of graphene were grown on on-axis 6H-SiC with different step densities realized through controlling growth temperature and ambient pressure. We show that epitaxial graphene on SiC (0001) with low step density and straight step edge possesses fewer point defects laying mostly on step edges and higher carrier mobility. A relationship between step density and EG mobility is established. The linear scan of Raman spectra combined with the atomic force microscopy morphology images revealed that the Raman fingerprint peaks are nearly the same on terraces, but shift significantly while cross step edges, suggesting the graphene is not homogeneous in strain and carrier concentration over terraces and step edges of substrates. Thus, control morphology of epitaxial graphene on SiC (0001) is a simple and effective method to pursue optimal route for high quality graphene and will be helpful to prepare wafer sized graphene for device applications.},
doi = {10.1063/1.4863796},
url = {https://www.osti.gov/biblio/22275598}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 4,
volume = 115,
place = {United States},
year = {2014},
month = {1}
}