Approach to Defect-Free Lifetime and High Electron Density in CdTe

Swain, S. K.; Duenow, J. N.; Johnston, S. W.; Amarasinghe, M.; McCoy, J. J.; Metzger, W. K.; Lynn, K. G.

doi:10.1007/s11664-019-07190-x

Title: Approach to Defect-Free Lifetime and High Electron Density in CdTe

Abstract

Achieving simultaneously high carrier density and lifetime is crucial to II-VI semiconductor-based applications such as photovoltaics and infrared detectors; yet, it is a challenging task. In this work, high purity CdTe single crystals doped with indium (In) were grown by vertical Bridgman melt growth under carefully controlled stoichiometry. Two-photon excitation time-resolved photoluminescence was employed to measure bulk recombination lifetime by eliminating surface recombination effects. By adjusting stoichiometry with post growth annealing, high-net free carrier density approaching 10¹⁸ cm^-3 was attained simultaneously with lifetime approaching the radiative limit by suppressing non-radiative recombination centers.

Authors:

Swain, S. K. ^[1]; Duenow, J. N. ^[2]; Johnston, S. W. ^[2]; Amarasinghe, M. ^[2]; McCoy, J. J. ^[1]; Metzger, W. K. ^[2]; Lynn, K. G. ^[1]

Washington State Univ., Pullman, WA (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

Publication Date:: Thu Apr 11 00:00:00 EDT 2019

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States); Washington State Univ., Pullman, WA (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

OSTI Identifier:: 1512683

Alternate Identifier(s):: OSTI ID: 1644037; OSTI ID: 1741033

Report Number(s):: NREL/JA-5K00-73893
Journal ID: ISSN 0361-5235

Grant/Contract Number:: AC36-08GO28308; EE0007537; EE0008548

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Electronic Materials

Additional Journal Information:: Journal Volume: 48; Journal Issue: 7; Journal ID: ISSN 0361-5235

Publisher:: Springer

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 14 SOLAR ENERGY; n-type CdTe; time resolved photoluminescence; carrier density; life time

Citation Formats


                    Swain, S. K., Duenow, J. N., Johnston, S. W., Amarasinghe, M., McCoy, J. J., Metzger, W. K., and Lynn, K. G. Approach to Defect-Free Lifetime and High Electron Density in CdTe.  United States: N. p., 2019. 
Web.  doi:10.1007/s11664-019-07190-x.

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                    Swain, S. K., Duenow, J. N., Johnston, S. W., Amarasinghe, M., McCoy, J. J., Metzger, W. K., & Lynn, K. G. Approach to Defect-Free Lifetime and High Electron Density in CdTe.  United States.  https://doi.org/10.1007/s11664-019-07190-x

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                    Swain, S. K., Duenow, J. N., Johnston, S. W., Amarasinghe, M., McCoy, J. J., Metzger, W. K., and Lynn, K. G. Thu .  
"Approach to Defect-Free Lifetime and High Electron Density in CdTe".  United States.  https://doi.org/10.1007/s11664-019-07190-x.  https://www.osti.gov/servlets/purl/1512683.

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@article{osti_1512683,

  title        = {Approach to Defect-Free Lifetime and High Electron Density in CdTe},

  author       = {Swain, S. K. and Duenow, J. N. and Johnston, S. W. and Amarasinghe, M. and McCoy, J. J. and Metzger, W. K. and Lynn, K. G.},

  abstractNote = {Achieving simultaneously high carrier density and lifetime is crucial to II-VI semiconductor-based applications such as photovoltaics and infrared detectors; yet, it is a challenging task. In this work, high purity CdTe single crystals doped with indium (In) were grown by vertical Bridgman melt growth under carefully controlled stoichiometry. Two-photon excitation time-resolved photoluminescence was employed to measure bulk recombination lifetime by eliminating surface recombination effects. By adjusting stoichiometry with post growth annealing, high-net free carrier density approaching 1018 cm-3 was attained simultaneously with lifetime approaching the radiative limit by suppressing non-radiative recombination centers.},

  doi          = {10.1007/s11664-019-07190-x},

  journal      = {Journal of Electronic Materials},

  number       = 7,

  volume       = 48,

  place        = {United States},

  year         = {Thu Apr 11 00:00:00 EDT 2019},

  month        = {Thu Apr 11 00:00:00 EDT 2019}

}

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Works referencing / citing this record:

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WSU1920--8548-0
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Similar Records

Title: Approach to Defect-Free Lifetime and High Electron Density in CdTe

Abstract

Citation Formats

Auger recombination in GaAs and GaSb journal, July 1977

An optical technique for measuring surface recombination velocity journal, May 2009

Non-Radiative Carrier Recombination Enhanced by Two-Level Process: A First-Principles Study journal, February 2016

Carrier providers or killers: The case of Cu defects in CdTe journal, July 2017

Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe journal, October 2002

Surface Passivation of CdTe Single Crystals journal, January 2015

Unusually low surface recombination and long bulk lifetime in n -CdTe single crystals journal, September 1998

Indium doping of CdTe polycrystalline films prepared by co-sputtering of CdTe–In–Cd targets journal, January 1997

Intrinsic surface passivation of CdTe journal, October 2015

The roles of carrier concentration and interface, bulk, and grain-boundary recombination for 25% efficient CdTe solar cells journal, June 2017

In Situ Arsenic Doping of CdTe/Si by Molecular Beam Epitaxy journal, July 2015

Modified compensation model of CdTe journal, December 1998

Identification of the chlorine A center in CdTe journal, March 1992

Minority Carrier Lifetime Analysis in the Bulk of Thin-Film Absorbers Using Subbandgap (Two-Photon) Excitation journal, October 2013

Compensating related defects in In-doped bulk CdTe journal, June 2000

Dependence of the Minority-Carrier Lifetime on the Stoichiometry of CdTe Using Time-Resolved Photoluminescence and First-Principles Calculations journal, August 2013

Electrical Properties of n -Type CdTe journal, March 1963

Study of defect levels in CdTe using thermoelectric effect spectroscopy journal, June 2006

Iodine Doping of CdTe and CdMgTe for Photovoltaic Applications journal, June 2017

Radiative and interfacial recombination in CdTe heterostructures journal, December 2014

Impurity gettering effect of Te inclusions in CdZnTe single crystals journal, December 2008

Vapor Pressure Scanning of Nonstoichiometry in CdTe journal, February 1993

Electrical compensation in CdTe and Cd 0.9 Zn 0.1 Te by intrinsic defects journal, December 2000

Optical investigations of defects in Cd 1 − x Zn x Te journal, April 1995

Distribution and genesis of inclusions in CdTe and (Cd,Zn)Te single crystals grown by the Bridgman method and by the travelling heater method journal, February 1995

Final Report: Preparation and Evaluation of N-Type CdSeTe and CdTe as an Absorber in Thin Film PV report, March 2021

Auger recombination in GaAs and GaSb
journal, July 1977

An optical technique for measuring surface recombination velocity
journal, May 2009

Non-Radiative Carrier Recombination Enhanced by Two-Level Process: A First-Principles Study
journal, February 2016

Carrier providers or killers: The case of Cu defects in CdTe
journal, July 2017

Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe
journal, October 2002

Surface Passivation of CdTe Single Crystals
journal, January 2015

Unusually low surface recombination and long bulk lifetime in n -CdTe single crystals
journal, September 1998

Indium doping of CdTe polycrystalline films prepared by co-sputtering of CdTe–In–Cd targets
journal, January 1997

Intrinsic surface passivation of CdTe
journal, October 2015

The roles of carrier concentration and interface, bulk, and grain-boundary recombination for 25% efficient CdTe solar cells
journal, June 2017

In Situ Arsenic Doping of CdTe/Si by Molecular Beam Epitaxy
journal, July 2015

Modified compensation model of CdTe
journal, December 1998

Identification of the chlorine A center in CdTe
journal, March 1992

Minority Carrier Lifetime Analysis in the Bulk of Thin-Film Absorbers Using Subbandgap (Two-Photon) Excitation
journal, October 2013

Compensating related defects in In-doped bulk CdTe
journal, June 2000

Dependence of the Minority-Carrier Lifetime on the Stoichiometry of CdTe Using Time-Resolved Photoluminescence and First-Principles Calculations
journal, August 2013

Electrical Properties of $n$ -Type CdTe
journal, March 1963

Study of defect levels in CdTe using thermoelectric effect spectroscopy
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Iodine Doping of CdTe and CdMgTe for Photovoltaic Applications
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Radiative and interfacial recombination in CdTe heterostructures
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Impurity gettering effect of Te inclusions in CdZnTe single crystals
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Vapor Pressure Scanning of Nonstoichiometry in CdTe
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Electrical compensation in CdTe and ${Cd}_{0.9} {Zn}_{0.1} Te$ by intrinsic defects
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Optical investigations of defects in ${Cd}_{1 - x}$ ${Zn}_{x}$ Te
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Distribution and genesis of inclusions in CdTe and (Cd,Zn)Te single crystals grown by the Bridgman method and by the travelling heater method
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