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Title: Spectroscopic and Microscopic Defect and Carrier-Lifetime Analysis in Cadmium Telluride

Abstract

Using experiments and theory, we analyze 'carrier-lifetime-killer' semiconductor bulk defects in CdTe. We can estimate the concentration of tellurium antisite (Te Cd ) recombination centers in undoped CdTe from the kinetic modeling of injection-dependent photoluminescence (PL) lifetimes. For the Cd-rich stoichiometry, the concentration of lifetime-limiting [Te Cd] is =10 13 cm -3. For the Te-rich stoichiometry, we find a smaller hole-capture rate constant than predicted by theory, which could be because of Te Cd association with the Te interstitials. We also compare PL emission spectra, carrier lifetimes, and radiative efficiencies for Cu, P, and As doping and analyze the microscopic distribution of carrier lifetimes in As-doped single-crystal CdTe. In all the cases examined here, point defects are the dominant bulk recombination centers. Carrier lifetimes are the longest in undoped CdTe, but radiative efficiencies are the highest with group-V doping.

Authors:
 [1];  [2]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. First Solar, Inc., Perrysburg, OH (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1478183
Report Number(s):
NREL/JA-5900-71484
Journal ID: ISSN 2156-3381
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
IEEE Journal of Photovoltaics
Additional Journal Information:
Journal Volume: 8; Journal Issue: 6; Journal ID: ISSN 2156-3381
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; II-VI semiconductor materials; cadmium compounds; charge carrier lifetime; crystals; kinetic theory; radiative recombination; photovoltaic cells

Citation Formats

Kuciauskas, Darius, and Krasikov, Dmitry. Spectroscopic and Microscopic Defect and Carrier-Lifetime Analysis in Cadmium Telluride. United States: N. p., 2018. Web. doi:10.1109/JPHOTOV.2018.2866180.
Kuciauskas, Darius, & Krasikov, Dmitry. Spectroscopic and Microscopic Defect and Carrier-Lifetime Analysis in Cadmium Telluride. United States. doi:10.1109/JPHOTOV.2018.2866180.
Kuciauskas, Darius, and Krasikov, Dmitry. Thu . "Spectroscopic and Microscopic Defect and Carrier-Lifetime Analysis in Cadmium Telluride". United States. doi:10.1109/JPHOTOV.2018.2866180. https://www.osti.gov/servlets/purl/1478183.
@article{osti_1478183,
title = {Spectroscopic and Microscopic Defect and Carrier-Lifetime Analysis in Cadmium Telluride},
author = {Kuciauskas, Darius and Krasikov, Dmitry},
abstractNote = {Using experiments and theory, we analyze 'carrier-lifetime-killer' semiconductor bulk defects in CdTe. We can estimate the concentration of tellurium antisite (Te Cd ) recombination centers in undoped CdTe from the kinetic modeling of injection-dependent photoluminescence (PL) lifetimes. For the Cd-rich stoichiometry, the concentration of lifetime-limiting [Te Cd] is =1013 cm-3. For the Te-rich stoichiometry, we find a smaller hole-capture rate constant than predicted by theory, which could be because of Te Cd association with the Te interstitials. We also compare PL emission spectra, carrier lifetimes, and radiative efficiencies for Cu, P, and As doping and analyze the microscopic distribution of carrier lifetimes in As-doped single-crystal CdTe. In all the cases examined here, point defects are the dominant bulk recombination centers. Carrier lifetimes are the longest in undoped CdTe, but radiative efficiencies are the highest with group-V doping.},
doi = {10.1109/JPHOTOV.2018.2866180},
journal = {IEEE Journal of Photovoltaics},
number = 6,
volume = 8,
place = {United States},
year = {2018},
month = {9}
}

Journal Article:
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