Growth of epitaxial CdTe thin films on amorphous substrates using single crystal graphene buffer

Mohanty, Dibyajyoti; Lu, Zonghuan; Sun, Xin; Xiang, Yu; Gao, Lei; Shi, Jian; Zhang, Lihua; Kisslinger, Kim; Washington, Morris A.; Wang, Gwo-Ching; Lu, Toh-Ming; Bhat, Ishwara B.

doi:10.1016/j.carbon.2018.12.094

Title: Growth of epitaxial CdTe thin films on amorphous substrates using single crystal graphene buffer

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Abstract

Traditionally, a high-quality CdTe film can only be grown on a single crystal substrate with a small lattice mismatch. We report the epitaxy of CdTe films on monolayer single crystal graphene buffered amorphous SiO₂/Si(100) substrates, despite a 86% lattice mismatch between CdTe(111) and graphene. X-ray pole figure, electron backscatter diffraction mapping and transmission electron microscopy all confirm that the epitaxial CdTe films are composed of two domains: the primary and the Σ3 twin. The crystal quality of films is shown to improve as the post-deposition annealing temperature increases. However, the rotational misalignment in CdTe remains large even after annealing. Through density functional theory calculations on the charge transfer distribution at the interface of CdTe and graphene, it is found that the interface is dominated by the weak van der Waals interaction, which explains the large spread of in-plane orientation in CdTe films. Furthermore, the rotational misalignment in graphene itself is also confirmed to produce the large in-plane orientation spread in CdTe films. Although imperfect in epitaxy quality, this work demonstrates that monolayer single crystal graphene can buffer amorphous substrates for growing epitaxial films, and hence hints an opportunity for developing advanced thin film devices using graphene as a template.

Authors:

Mohanty, Dibyajyoti ^[1]; Lu, Zonghuan ^[2];

^[2]; Xiang, Yu ^[3];

^[4]; Shi, Jian ^[5]; Zhang, Lihua ^[6]; Kisslinger, Kim ^[6]; Washington, Morris A. ^[3]; Wang, Gwo-Ching ^[3]; Lu, Toh-Ming ^[3]; Bhat, Ishwara B. ^[1]

Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Electrical, Computer and Systems Engineering. Center for Materials, Devices and Integrated Systems
Rensselaer Polytechnic Inst., Troy, NY (United States). Center for Materials, Devices and Integrated Systems
Rensselaer Polytechnic Inst., Troy, NY (United States). Center for Materials, Devices and Integrated Systems. Dept. of Physics, Applied Physics and Astronomy
Univ. of Science and Technology Beijing (China). Corrosion and Protection Center. Key Lab. for Environmental Fracture
Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Materials Science and Engineering
Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials

Publication Date:: Mon Dec 24 00:00:00 EST 2018

Research Org.:: Brookhaven National Lab. (BNL), Upton, NY (United States); Rensselaer Polytechnic Inst., Troy, NY (United States); University of Science and Technology Beijing (China)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); Empire State Development (ESD) (United States); National Natural Science Foundation of China (NSFC)

OSTI Identifier:: 1503513

Alternate Identifier(s):: OSTI ID: 1756110

Report Number(s):: BNL-211468-2019-JAAM
Journal ID: ISSN 0008-6223

Grant/Contract Number:: SC0012704; DMR-1305293; C150117; 51705017; U1706221

Resource Type:: Accepted Manuscript

Journal Name:: Carbon

Additional Journal Information:: Journal Volume: 144; Journal ID: ISSN 0008-6223

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Mohanty, Dibyajyoti, Lu, Zonghuan, Sun, Xin, Xiang, Yu, Gao, Lei, Shi, Jian, Zhang, Lihua, Kisslinger, Kim, Washington, Morris A., Wang, Gwo-Ching, Lu, Toh-Ming, and Bhat, Ishwara B. Growth of epitaxial CdTe thin films on amorphous substrates using single crystal graphene buffer.  United States: N. p., 2018. 
Web.  doi:10.1016/j.carbon.2018.12.094.

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                    Mohanty, Dibyajyoti, Lu, Zonghuan, Sun, Xin, Xiang, Yu, Gao, Lei, Shi, Jian, Zhang, Lihua, Kisslinger, Kim, Washington, Morris A., Wang, Gwo-Ching, Lu, Toh-Ming, & Bhat, Ishwara B. Growth of epitaxial CdTe thin films on amorphous substrates using single crystal graphene buffer.  United States.  https://doi.org/10.1016/j.carbon.2018.12.094

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                    Mohanty, Dibyajyoti, Lu, Zonghuan, Sun, Xin, Xiang, Yu, Gao, Lei, Shi, Jian, Zhang, Lihua, Kisslinger, Kim, Washington, Morris A., Wang, Gwo-Ching, Lu, Toh-Ming, and Bhat, Ishwara B. Mon .  
"Growth of epitaxial CdTe thin films on amorphous substrates using single crystal graphene buffer".  United States.  https://doi.org/10.1016/j.carbon.2018.12.094.  https://www.osti.gov/servlets/purl/1503513.

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@article{osti_1503513,

  title        = {Growth of epitaxial CdTe thin films on amorphous substrates using single crystal graphene buffer},

  author       = {Mohanty, Dibyajyoti and Lu, Zonghuan and Sun, Xin and Xiang, Yu and Gao, Lei and Shi, Jian and Zhang, Lihua and Kisslinger, Kim and Washington, Morris A. and Wang, Gwo-Ching and Lu, Toh-Ming and Bhat, Ishwara B.},

  abstractNote = {Traditionally, a high-quality CdTe film can only be grown on a single crystal substrate with a small lattice mismatch. We report the epitaxy of CdTe films on monolayer single crystal graphene buffered amorphous SiO2/Si(100) substrates, despite a 86% lattice mismatch between CdTe(111) and graphene. X-ray pole figure, electron backscatter diffraction mapping and transmission electron microscopy all confirm that the epitaxial CdTe films are composed of two domains: the primary and the Σ3 twin. The crystal quality of films is shown to improve as the post-deposition annealing temperature increases. However, the rotational misalignment in CdTe remains large even after annealing. Through density functional theory calculations on the charge transfer distribution at the interface of CdTe and graphene, it is found that the interface is dominated by the weak van der Waals interaction, which explains the large spread of in-plane orientation in CdTe films. Furthermore, the rotational misalignment in graphene itself is also confirmed to produce the large in-plane orientation spread in CdTe films. Although imperfect in epitaxy quality, this work demonstrates that monolayer single crystal graphene can buffer amorphous substrates for growing epitaxial films, and hence hints an opportunity for developing advanced thin film devices using graphene as a template.},

  doi          = {10.1016/j.carbon.2018.12.094},

  journal      = {Carbon},

  number       = ,

  volume       = 144,

  place        = {United States},

  year         = {Mon Dec 24 00:00:00 EST 2018},

  month        = {Mon Dec 24 00:00:00 EST 2018}

}

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