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Title: Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate

We report single crystal CdTe films are desirable for optoelectronic device applications. An important strategy of creating films with high crystallinity is through epitaxial growth on a proper single crystal substrate. We report the metalorganic chemical vapor deposition of epitaxial CdTe films on the CdS/mica substrate. The epitaxial CdS film was grown on a mica surface by thermal evaporation. Due to the weak van der Waals forces, epitaxy is achieved despite the very large interface lattice mismatch between CdS and mica (~21–55%). The surface morphology of mica, CdS and CdTe were quantified by atomic force microscopy. The near surface structures, orientations and texture of CdTe and CdS films were characterized by the unique reflection high-energy electron diffraction surface pole figure technique. The interfaces of CdTe and CdS films and mica were characterized by X-ray pole figure technique and transmission electron microscopy. The out-of-plane and in-plane epitaxy of the heteroepitaxial films stack are determined to be CdTe(111)//CdS(0001)//mica(001) and [$$\overline{1}2\overline{1}$$] CdTe//[$$\overline{1}100$$] CdS//[010] mica, respectively. The measured photoluminescence (PL), time resolved PL, photoresponse, and Hall mobility of the CdTe/CdS/mica indicate quality films. Finally, the use of van der Waals surface to grow epitaxial CdTe/CdS films offers an alternative strategy towards infrared imaging and solar cell applications.
Authors:
 [1] ;  [1] ;  [2] ;  [3] ;  [4] ;  [4] ;  [1] ;  [3] ;  [2] ;  [1] ;  [1] ;  [1]
  1. Rensselaer Polytechnic Inst., Troy, NY (United States). Department of Physics, Applied Physics and Astronomy, and Center for Materials, Devices, and Integrated Systems
  2. Rensselaer Polytechnic Inst., Troy, NY (United States). Department of Electrical, Computer and Systems Engineering
  3. Rensselaer Polytechnic Inst., Troy, NY (United States). Department of Materials Science and Engineering
  4. Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
Publication Date:
Report Number(s):
BNL-114085-2017-JA
Journal ID: ISSN 0169-4332; R&D Project: 16060; 16060; KC0403020
Grant/Contract Number:
SC0012704
Type:
Accepted Manuscript
Journal Name:
Applied Surface Science
Additional Journal Information:
Journal Volume: 413; Journal Issue: C; Journal ID: ISSN 0169-4332
Publisher:
Elsevier
Research Org:
Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Heteroepitaxy; CdTe; van der Waals; RHEED; Photoresponse
OSTI Identifier:
1376144
Alternate Identifier(s):
OSTI ID: 1419405

Yang, Y. -B., Seewald, L., Mohanty, Dibyajyoti, Wang, Y., Zhang, L. H., Kisslinger, K., Xie, Weiyu, Shi, J., Bhat, I., Zhang, Shengbai, Lu, T. -M., and Wang, G. -C.. Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate. United States: N. p., Web. doi:10.1016/j.apsusc.2017.03.260.
Yang, Y. -B., Seewald, L., Mohanty, Dibyajyoti, Wang, Y., Zhang, L. H., Kisslinger, K., Xie, Weiyu, Shi, J., Bhat, I., Zhang, Shengbai, Lu, T. -M., & Wang, G. -C.. Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate. United States. doi:10.1016/j.apsusc.2017.03.260.
Yang, Y. -B., Seewald, L., Mohanty, Dibyajyoti, Wang, Y., Zhang, L. H., Kisslinger, K., Xie, Weiyu, Shi, J., Bhat, I., Zhang, Shengbai, Lu, T. -M., and Wang, G. -C.. 2017. "Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate". United States. doi:10.1016/j.apsusc.2017.03.260. https://www.osti.gov/servlets/purl/1376144.
@article{osti_1376144,
title = {Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate},
author = {Yang, Y. -B. and Seewald, L. and Mohanty, Dibyajyoti and Wang, Y. and Zhang, L. H. and Kisslinger, K. and Xie, Weiyu and Shi, J. and Bhat, I. and Zhang, Shengbai and Lu, T. -M. and Wang, G. -C.},
abstractNote = {We report single crystal CdTe films are desirable for optoelectronic device applications. An important strategy of creating films with high crystallinity is through epitaxial growth on a proper single crystal substrate. We report the metalorganic chemical vapor deposition of epitaxial CdTe films on the CdS/mica substrate. The epitaxial CdS film was grown on a mica surface by thermal evaporation. Due to the weak van der Waals forces, epitaxy is achieved despite the very large interface lattice mismatch between CdS and mica (~21–55%). The surface morphology of mica, CdS and CdTe were quantified by atomic force microscopy. The near surface structures, orientations and texture of CdTe and CdS films were characterized by the unique reflection high-energy electron diffraction surface pole figure technique. The interfaces of CdTe and CdS films and mica were characterized by X-ray pole figure technique and transmission electron microscopy. The out-of-plane and in-plane epitaxy of the heteroepitaxial films stack are determined to be CdTe(111)//CdS(0001)//mica(001) and [$\overline{1}2\overline{1}$]CdTe//[$\overline{1}100$]CdS//[010]mica, respectively. The measured photoluminescence (PL), time resolved PL, photoresponse, and Hall mobility of the CdTe/CdS/mica indicate quality films. Finally, the use of van der Waals surface to grow epitaxial CdTe/CdS films offers an alternative strategy towards infrared imaging and solar cell applications.},
doi = {10.1016/j.apsusc.2017.03.260},
journal = {Applied Surface Science},
number = C,
volume = 413,
place = {United States},
year = {2017},
month = {3}
}