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Title: Enhancement-mode AlGaN channel high electron mobility transistor enabled by p-AlGaN gate

Abstract

Here, this work exhibits the ability to shift the threshold voltage of an Al 0.45Ga 0.55N/Al 0.3Ga 0.7N high electron mobility transistor through the implementation of a 100 nm thick p-Al 0.3Ga 0.7N gate. A maximum threshold voltage of +0.3 V was achieved with a 3 μm gate length. In addition to achieving enhancement-mode operation, this work also shows the capability to obtain high saturated drain current (>50 mA/mm), no gate hysteresis, high I ON,MAX/I OFF,MIN ratio of >10 9, and exceptionally low gate leakage current of 10 -6 mA/mm even under high forward bias of V gs = 8 V.

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1498762
Report Number(s):
SAND-2018-10231J
Journal ID: ISSN 2166-2746; 668003
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics
Additional Journal Information:
Journal Volume: 37; Journal Issue: 2; Journal ID: ISSN 2166-2746
Publisher:
American Vacuum Society/AIP
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Douglas, Erica A., Klein, Brianna, Allerman, Andrew A., Baca, Albert G., Fortune, Torben, and Armstrong, Andrew M. Enhancement-mode AlGaN channel high electron mobility transistor enabled by p-AlGaN gate. United States: N. p., 2019. Web. doi:10.1116/1.5066327.
Douglas, Erica A., Klein, Brianna, Allerman, Andrew A., Baca, Albert G., Fortune, Torben, & Armstrong, Andrew M. Enhancement-mode AlGaN channel high electron mobility transistor enabled by p-AlGaN gate. United States. doi:10.1116/1.5066327.
Douglas, Erica A., Klein, Brianna, Allerman, Andrew A., Baca, Albert G., Fortune, Torben, and Armstrong, Andrew M. Fri . "Enhancement-mode AlGaN channel high electron mobility transistor enabled by p-AlGaN gate". United States. doi:10.1116/1.5066327.
@article{osti_1498762,
title = {Enhancement-mode AlGaN channel high electron mobility transistor enabled by p-AlGaN gate},
author = {Douglas, Erica A. and Klein, Brianna and Allerman, Andrew A. and Baca, Albert G. and Fortune, Torben and Armstrong, Andrew M.},
abstractNote = {Here, this work exhibits the ability to shift the threshold voltage of an Al0.45Ga0.55N/Al0.3Ga0.7N high electron mobility transistor through the implementation of a 100 nm thick p-Al0.3Ga0.7N gate. A maximum threshold voltage of +0.3 V was achieved with a 3 μm gate length. In addition to achieving enhancement-mode operation, this work also shows the capability to obtain high saturated drain current (>50 mA/mm), no gate hysteresis, high ION,MAX/IOFF,MIN ratio of >109, and exceptionally low gate leakage current of 10-6 mA/mm even under high forward bias of Vgs = 8 V.},
doi = {10.1116/1.5066327},
journal = {Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics},
number = 2,
volume = 37,
place = {United States},
year = {2019},
month = {3}
}

Journal Article:
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This content will become publicly available on March 1, 2020
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