Enhancement-mode AlGaN channel high electron mobility transistor enabled by p-AlGaN gate

Douglas, Erica A.; Klein, Brianna; Allerman, Andrew A.; Baca, Albert G.; Fortune, Torben; Armstrong, Andrew M.

doi:10.1116/1.5066327

Title: Enhancement-mode AlGaN channel high electron mobility transistor enabled by p-AlGaN gate

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Abstract

Here, this work exhibits the ability to shift the threshold voltage of an Al_0.45Ga_0.55N/Al_0.3Ga_0.7N high electron mobility transistor through the implementation of a 100 nm thick p-Al_0.3Ga_0.7N gate. A maximum threshold voltage of +0.3 V was achieved with a 3 μm gate length. In addition to achieving enhancement-mode operation, this work also shows the capability to obtain high saturated drain current (>50 mA/mm), no gate hysteresis, high I_ON,MAX/I_OFF,MIN ratio of >10⁹, and exceptionally low gate leakage current of 10^-6 mA/mm even under high forward bias of V_gs = 8 V.

Authors:

^[1]; Klein, Brianna ^[1]; Allerman, Andrew A. ^[1]; Baca, Albert G. ^[1]; Fortune, Torben ^[1]; Armstrong, Andrew M. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Publication Date:: Fri Mar 01 00:00:00 EST 2019

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1498762

Report Number(s):: SAND-2018-10231J
Journal ID: ISSN 2166-2746; 668003

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics

Additional Journal Information:: Journal Volume: 37; Journal Issue: 2; Journal ID: ISSN 2166-2746

Publisher:: American Vacuum Society/AIP

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Douglas, Erica A., Klein, Brianna, Allerman, Andrew A., Baca, Albert G., Fortune, Torben, and Armstrong, Andrew M. Enhancement-mode AlGaN channel high electron mobility transistor enabled by p-AlGaN gate.  United States: N. p., 2019. 
Web.  doi:10.1116/1.5066327.

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                    Douglas, Erica A., Klein, Brianna, Allerman, Andrew A., Baca, Albert G., Fortune, Torben, & Armstrong, Andrew M. Enhancement-mode AlGaN channel high electron mobility transistor enabled by p-AlGaN gate.  United States.  https://doi.org/10.1116/1.5066327

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                    Douglas, Erica A., Klein, Brianna, Allerman, Andrew A., Baca, Albert G., Fortune, Torben, and Armstrong, Andrew M. Fri .  
"Enhancement-mode AlGaN channel high electron mobility transistor enabled by p-AlGaN gate".  United States.  https://doi.org/10.1116/1.5066327.  https://www.osti.gov/servlets/purl/1498762.

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@article{osti_1498762,

  title        = {Enhancement-mode AlGaN channel high electron mobility transistor enabled by p-AlGaN gate},

  author       = {Douglas, Erica A. and Klein, Brianna and Allerman, Andrew A. and Baca, Albert G. and Fortune, Torben and Armstrong, Andrew M.},

  abstractNote = {Here, this work exhibits the ability to shift the threshold voltage of an Al0.45Ga0.55N/Al0.3Ga0.7N high electron mobility transistor through the implementation of a 100 nm thick p-Al0.3Ga0.7N gate. A maximum threshold voltage of +0.3 V was achieved with a 3 μm gate length. In addition to achieving enhancement-mode operation, this work also shows the capability to obtain high saturated drain current (>50 mA/mm), no gate hysteresis, high ION,MAX/IOFF,MIN ratio of >109, and exceptionally low gate leakage current of 10-6 mA/mm even under high forward bias of Vgs = 8 V.},

  doi          = {10.1116/1.5066327},

  journal      = {Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics},

  number       = 2,

  volume       = 37,

  place        = {United States},

  year         = {Fri Mar 01 00:00:00 EST 2019},

  month        = {Fri Mar 01 00:00:00 EST 2019}

}

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