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Title: UV-luminescent MgZnO semiconductor alloys: nanostructure and optical properties

Abstract

MgZnO is emerging as a vital semiconductor-alloy system with desirable optical properties that can span a large range of the UV spectrum. Due to its benign chemical character, MgZnO is considered to be an environmentally friendly material. This paper presents studies on annealing as a useful and straightforward approach for the enhancement of the optical and crystal quality of Mg0.17Zn0.83O nanocrystalline films grown via DC sputtering. The alloys were studied via several imaging and optical techniques. It was found that high-temperature annealing, ~900 °C, in Argon atmosphere, significantly improves the solubility of the alloy. This temperature range is consistent with the thermal diffusion temperature of Mg needed for the creation of a soluble alloy. Moreover, the annealing process was found to minimize the undesirable visible luminescence, attributed to Mg and Zn interstitials, while significantly enhancing the bandgap sharpness and the efficiency of the UV-luminescence at ~3.5 eV. The analysis indicated that these optical attributes were achieved due to the combined effects of good solubility, an improved morphology, and a reduction of native defects. The annealing was also proven to be beneficial for the reduction of the compressive stress in the alloy: a relaxation ~1.8 GPa was calculated via Raman scattering.more » The inherent stress was inferred to originate mainly from the granular morphology of the alloys.« less

Authors:
; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Washington State Univ., Pullman, WA (United States); Univ. of Idaho, Moscow, ID (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1329729
Alternate Identifier(s):
OSTI ID: 1423795; OSTI ID: 1489141
Grant/Contract Number:  
FG02-07ER46386
Resource Type:
Published Article
Journal Name:
Journal of Materials Science. Materials in Electronics
Additional Journal Information:
Journal Name: Journal of Materials Science. Materials in Electronics Journal Volume: 28 Journal Issue: 3; Journal ID: ISSN 0957-4522
Publisher:
Springer Science + Business Media
Country of Publication:
United Kingdom
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; metal organic chemical vapor deposition; native defect; alloy film; Urbach energy; nanocrystalline film

Citation Formats

Thapa, Dinesh, Huso, Jesse, Miklos, Kevin, Wojcik, Peter M., McIlroy, David N., Morrison, John L., Corolewski, Caleb, McCluskey, Matthew D., Williams, Thomas J., Grant Norton, M., and Bergman, Leah. UV-luminescent MgZnO semiconductor alloys: nanostructure and optical properties. United Kingdom: N. p., 2016. Web. doi:10.1007/s10854-016-5825-2.
Thapa, Dinesh, Huso, Jesse, Miklos, Kevin, Wojcik, Peter M., McIlroy, David N., Morrison, John L., Corolewski, Caleb, McCluskey, Matthew D., Williams, Thomas J., Grant Norton, M., & Bergman, Leah. UV-luminescent MgZnO semiconductor alloys: nanostructure and optical properties. United Kingdom. https://doi.org/10.1007/s10854-016-5825-2
Thapa, Dinesh, Huso, Jesse, Miklos, Kevin, Wojcik, Peter M., McIlroy, David N., Morrison, John L., Corolewski, Caleb, McCluskey, Matthew D., Williams, Thomas J., Grant Norton, M., and Bergman, Leah. Mon . "UV-luminescent MgZnO semiconductor alloys: nanostructure and optical properties". United Kingdom. https://doi.org/10.1007/s10854-016-5825-2.
@article{osti_1329729,
title = {UV-luminescent MgZnO semiconductor alloys: nanostructure and optical properties},
author = {Thapa, Dinesh and Huso, Jesse and Miklos, Kevin and Wojcik, Peter M. and McIlroy, David N. and Morrison, John L. and Corolewski, Caleb and McCluskey, Matthew D. and Williams, Thomas J. and Grant Norton, M. and Bergman, Leah},
abstractNote = {MgZnO is emerging as a vital semiconductor-alloy system with desirable optical properties that can span a large range of the UV spectrum. Due to its benign chemical character, MgZnO is considered to be an environmentally friendly material. This paper presents studies on annealing as a useful and straightforward approach for the enhancement of the optical and crystal quality of Mg0.17Zn0.83O nanocrystalline films grown via DC sputtering. The alloys were studied via several imaging and optical techniques. It was found that high-temperature annealing, ~900 °C, in Argon atmosphere, significantly improves the solubility of the alloy. This temperature range is consistent with the thermal diffusion temperature of Mg needed for the creation of a soluble alloy. Moreover, the annealing process was found to minimize the undesirable visible luminescence, attributed to Mg and Zn interstitials, while significantly enhancing the bandgap sharpness and the efficiency of the UV-luminescence at ~3.5 eV. The analysis indicated that these optical attributes were achieved due to the combined effects of good solubility, an improved morphology, and a reduction of native defects. The annealing was also proven to be beneficial for the reduction of the compressive stress in the alloy: a relaxation ~1.8 GPa was calculated via Raman scattering. The inherent stress was inferred to originate mainly from the granular morphology of the alloys.},
doi = {10.1007/s10854-016-5825-2},
journal = {Journal of Materials Science. Materials in Electronics},
number = 3,
volume = 28,
place = {United Kingdom},
year = {Mon Oct 24 00:00:00 EDT 2016},
month = {Mon Oct 24 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1007/s10854-016-5825-2

Citation Metrics:
Cited by: 17 works
Citation information provided by
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Figures / Tables:

Fig. 1 Fig. 1: The SEM images of: a ZnO as-grown film, b MgZnO as grown, c MgZnO 750 °C annealed, and d MgZnO 900 °C annealed. The magnification of the SEM is 180 kX

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Works referenced in this record:

Ultraviolet photoluminescence and Raman properties of MgZnO nanopowders
journal, January 2006

  • Bergman, Leah; Morrison, John L.; Chen, Xiang-Bai
  • Applied Physics Letters, Vol. 88, Issue 2
  • DOI: 10.1063/1.2163991

Alloy broadening in photoluminescence spectra of Al x Ga 1 x As
journal, July 1984


Optical transitions and multiphonon Raman scattering of Cu doped ZnO and MgZnO ceramics
journal, February 2009

  • Huso, Jesse; Morrison, John L.; Mitchell, James
  • Applied Physics Letters, Vol. 94, Issue 6
  • DOI: 10.1063/1.3081628

Defects-Driven Ferromagnetism in Undoped Dilute Magnetic Oxides: A Review
journal, October 2015


Behavior of dual ion beam sputtered MgZnO thin films for different oxygen partial pressure
journal, December 2013

  • Pandey, Saurabh Kumar; Pandey, Sushil Kumar; Awasthi, Vishnu
  • Journal of Materials Science: Materials in Electronics, Vol. 25, Issue 2
  • DOI: 10.1007/s10854-013-1644-x

Dependence of the fundamental band gap of AlxGa1−xN on alloy composition and pressure
journal, June 1999

  • Shan, W.; Ager, J. W.; Yu, K. M.
  • Journal of Applied Physics, Vol. 85, Issue 12
  • DOI: 10.1063/1.370696

New insights into the role of native point defects in ZnO
journal, January 2006


Refractive indices and absorption coefficients of MgxZn1−xO alloys
journal, February 2000

  • Teng, C. W.; Muth, J. F.; Özgür, Ü.
  • Applied Physics Letters, Vol. 76, Issue 8
  • DOI: 10.1063/1.125912

Spin-Orbit Splitting of the Γ Exciton in MgO
journal, August 1966


Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation
journal, September 2013

  • Fischer, A. M.; Wei, Y. O.; Ponce, F. A.
  • Applied Physics Letters, Vol. 103, Issue 13
  • DOI: 10.1063/1.4822122

Stabilization of BeZnO alloy by S incorporation: A density functional theory investigation
journal, February 2016


Phonon dynamics and Urbach energy studies of MgZnO alloys
journal, March 2015

  • Huso, Jesse; Che, Hui; Thapa, Dinesh
  • Journal of Applied Physics, Vol. 117, Issue 12
  • DOI: 10.1063/1.4916096

Optical Properties and Electronic Structure of Amorphous Germanium
journal, January 1966


The Oxygen Vacancy as the Origin of a Green Emission in Undoped ZnO
journal, July 2001


CdSe nanoparticles: facile hydrothermal synthesis, characterization and optical properties
journal, June 2015

  • Sobhani, Azam; Salavati-Niasari, Masoud
  • Journal of Materials Science: Materials in Electronics, Vol. 26, Issue 9
  • DOI: 10.1007/s10854-015-3297-4

Annealing effect on nano-ZnO powder studied from positron lifetime and optical absorption spectroscopy
journal, January 2006

  • Dutta, Sreetama; Chattopadhyay, S.; Jana, D.
  • Journal of Applied Physics, Vol. 100, Issue 11
  • DOI: 10.1063/1.2401311

Growth and characteristics of ternary Zn1−x Mg x O films using magnetron co-sputtering
journal, October 2007

  • Kang, Si Woo; Kim, Young Yi; Ahn, Cheol Hyoun
  • Journal of Materials Science: Materials in Electronics, Vol. 19, Issue 8-9
  • DOI: 10.1007/s10854-007-9403-5

Mobility control of ceramic grain boundaries and interfaces
journal, July 1993


Structural and optical properties of MgxZn1–xO thin films formed by sol–gel method
journal, September 2004

  • Murakawa, T.; Fukudome, T.; Hayashi, T.
  • physica status solidi (c), Vol. 1, Issue 10
  • DOI: 10.1002/pssc.200404991

Deposition and characterization of sputtered ZnO films
journal, July 2007


Achieving highly-enhanced UV photoluminescence and its origin in ZnO nanocrystalline films
journal, August 2016


Effects of Mg on the electrical characteristics and thermal stability of MgxZn1−xO thin film transistors
journal, March 2011

  • Ku, Chieh-Jen; Duan, Ziqing; Reyes, Pavel I.
  • Applied Physics Letters, Vol. 98, Issue 12
  • DOI: 10.1063/1.3567533

Optical and structural characterization of AlInN layers for optoelectronic applications
journal, September 2010

  • Aschenbrenner, T.; Dartsch, H.; Kruse, C.
  • Journal of Applied Physics, Vol. 108, Issue 6
  • DOI: 10.1063/1.3467964

Growth and characterization of ZnO1−xSx highly mismatched alloys over the entire composition
journal, December 2015

  • Jaquez, M.; Yu, K. M.; Ting, M.
  • Journal of Applied Physics, Vol. 118, Issue 21
  • DOI: 10.1063/1.4936551

Raman scattering of polar modes of ZnO crystallites
journal, November 2005

  • Bergman, Leah; Chen, Xiang-Bai; Huso, Jesse
  • Journal of Applied Physics, Vol. 98, Issue 9
  • DOI: 10.1063/1.2126784

Anharmonic resonant Raman modes in Mg 0.2 Zn 0.8 O
journal, March 2013


Hydrothermal synthesis, characterization, and magnetic properties of cubic MnSe 2 /Se nanocomposites material
journal, December 2014


Hydrothermal synthesis of CoSe nanostructures without using surfactant
journal, August 2016


Optical properties of ZnO and MgZnO nanocrystals below and at the phase separation range
journal, December 2008

  • Morrison, John L.; Huso, Jesse; Hoeck, Heather
  • Journal of Applied Physics, Vol. 104, Issue 12
  • DOI: 10.1063/1.3043609

Probing embedded structural inhomogeneities in MgZnO alloys via selective resonant Raman scattering
journal, May 2013

  • Thapa, Dinesh; Huso, Jesse; Che, Hui
  • Applied Physics Letters, Vol. 102, Issue 19
  • DOI: 10.1063/1.4805005

Voltage-Current Characteristics of a Simple Zinc Oxide Varistor Containing Magnesia
journal, April 1990


Deep level related photoluminescence in ZnMgO
journal, November 2010

  • Trunk, M.; Venkatachalapathy, V.; Galeckas, A.
  • Applied Physics Letters, Vol. 97, Issue 21
  • DOI: 10.1063/1.3518480

Correlation between photoluminescence and oxygen vacancies in ZnO phosphors
journal, January 1996

  • Vanheusden, K.; Seager, C. H.; Warren, W. L.
  • Applied Physics Letters, Vol. 68, Issue 3
  • DOI: 10.1063/1.116699

Fundamentals of zinc oxide as a semiconductor
journal, October 2009


Effects of MgO doping in ZnO–0.5mol% V2O5 varistors
journal, July 2008


Optical Properties of ZnO-Alloyed Nanocrystalline Films
journal, January 2012

  • Che, Hui; Huso, Jesse; Morrison, John L.
  • Journal of Nanomaterials, Vol. 2012
  • DOI: 10.1155/2012/963485

Optical and structural characterization of GaN thin films at different N to Ga flux ratios
journal, January 2011

  • El-Naggar, Ahmed M.
  • Journal of Applied Physics, Vol. 109, Issue 2
  • DOI: 10.1063/1.3534001

ZnS x O 1-x Films Grown on Flexible Substrates
journal, January 2012


Interstitial zinc in zinc oxide
journal, January 1957


Optimized synthesis of ZnSe nanocrystals by hydrothermal method
journal, September 2015

  • Sobhani, Azam; Salavati-Niasari, Masoud
  • Journal of Materials Science: Materials in Electronics, Vol. 27, Issue 1
  • DOI: 10.1007/s10854-015-3753-1

Low temperature LO-phonon dynamics of MgZnO nanoalloys
journal, September 2007

  • Huso, Jesse; Morrison, John L.; Hoeck, Heather
  • Applied Physics Letters, Vol. 91, Issue 11
  • DOI: 10.1063/1.2784189

Defect dynamics in annealed ZnO by positron annihilation spectroscopy
journal, September 2005

  • Dutta, Sreetama; Chakrabarti, Mahuya; Chattopadhyay, S.
  • Journal of Applied Physics, Vol. 98, Issue 5
  • DOI: 10.1063/1.2035308

Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films
journal, April 2010

  • Yang, A. L.; Song, H. P.; Liang, D. C.
  • Applied Physics Letters, Vol. 96, Issue 15
  • DOI: 10.1063/1.3394012

High-temperature growth and in-situ annealing of MgZnO thin films by RF sputtering
journal, June 2008


Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer
journal, June 2007

  • Çörekçi, S.; Öztürk, M. K.; Akaoğlu, B.
  • Journal of Applied Physics, Vol. 101, Issue 12
  • DOI: 10.1063/1.2747216

The formation of MgZnO luminescent ceramics
journal, September 2011

  • Morrison, John L.; Huso, Jesse; Che, Hui
  • Journal of Materials Science: Materials in Electronics, Vol. 23, Issue 2
  • DOI: 10.1007/s10854-011-0530-7

Influence of postdeposition annealing on the structural and optical properties of sputtered zinc oxide film
journal, July 1996

  • Gupta, Vinay; Mansingh, Abhai
  • Journal of Applied Physics, Vol. 80, Issue 2
  • DOI: 10.1063/1.362842

MgxZn1−xO as a II–VI widegap semiconductor alloy
journal, May 1998

  • Ohtomo, A.; Kawasaki, M.; Koida, T.
  • Applied Physics Letters, Vol. 72, Issue 19
  • DOI: 10.1063/1.121384

Effects of Mg Additions on Microstructure and Optical Properties of Sol-Gel Derived ZnO Thin Films
journal, January 2008


Sol–gel derived amorphous/nanocrystalline MgZnO thin films annealed by atmospheric pressure plasma jets
journal, March 2014


Effects of post-annealing temperature on structural, optical, and electrical properties of MgxZn1−xO films by RF magnetron sputtering
journal, January 2011


A comprehensive review of ZnO materials and devices
journal, August 2005

  • Özgür, Ü.; Alivov, Ya. I.; Liu, C.
  • Journal of Applied Physics, Vol. 98, Issue 4
  • DOI: 10.1063/1.1992666

Synthesis and characterization of FeSe2 nanoparticles and FeSe2/FeO(OH) nanocomposites by hydrothermal method
journal, March 2015


Energy band bowing parameter in MgZnO alloys
journal, July 2015

  • Wang, Xu; Saito, Katsuhiko; Tanaka, Tooru
  • Applied Physics Letters, Vol. 107, Issue 2
  • DOI: 10.1063/1.4926980

First Principles Analysis of the Stability and Diffusion of Oxygen Vacancies in Metal Oxides
journal, November 2004


Defects in ZnO
journal, October 2009

  • McCluskey, M. D.; Jokela, S. J.
  • Journal of Applied Physics, Vol. 106, Issue 7
  • DOI: 10.1063/1.3216464

Thermal stability of supersaturated MgxZn1−xO alloy films and MgxZn1−xO/ZnO heterointerfaces
journal, December 1999

  • Ohtomo, A.; Shiroki, R.; Ohkubo, I.
  • Applied Physics Letters, Vol. 75, Issue 26
  • DOI: 10.1063/1.125545

Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.