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Title: Strain Tuning in Complex Oxide Epitaxial Films Using an Ultrathin Strontium Aluminate Buffer Layer

Abstract

A reliable method to apply biaxial strain over a wide range of values with minimal dislocation generation is critical for the study of strain dependent physical properties in oxide thin films and heterostructures. In this study, we systematically controlled the strain state in a perovskite manganite thin film by as much as 1% using a new ultrathin strain-releasing buffer layer Sr3Al2O6, and observed signatures of accompanying magnetic and metal–insulator transitions. The near-zero strain state is achieved within five nanometers of buffer layer thickness, substantially thinner than any oxide epitaxial buffer layers that can continuously tune the film strain states. Furthermore, the majority of misfit dislocations were confined to the Sr3Al2O6 layer, structurally decoupling defects in the film from the substrate.

Authors:
ORCiD logo [1];  [2];  [3];  [4];  [5];  [4];  [6];  [7];  [8];  [9];  [10]
+ Show Author Affiliations
  1. Stanford Univ., CA (United States). Dept. of Physics
  2. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES)
  3. Cornell Univ., Ithaca, NY (United States). School of Electrical and Computer Engineering
  4. Stanford Univ., CA (United States). Dept. of Applied Physics
  5. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES); Univ. of Tokyo (Japan). Dept. of Advanced Materials Science
  6. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES); Univ. of Tokyo (Japan). Dept. of Materials Engineering
  7. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES); Bristol Univ. (United Kingdom). H.H. Wills Physics Lab.
  8. Stanford Univ., CA (United States). Stanford Nano Shared Facilities
  9. Cornell Univ., Ithaca, NY (United States). School of Applied and Engineering Physics and Kavli Inst. at Cornell for Nanoscale Science
  10. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES); Stanford Univ., CA (United States). Dept. of Applied Physics
Publication Date:
Research Org.:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; Gordon and Betty Moore Foundation; National Science Foundation (NSF)
OSTI Identifier:
1457702
Grant/Contract Number:  
AC02-76SF00515; DGE-114747; DMR-1120296; GBMF4415
Resource Type:
Accepted Manuscript
Journal Name:
Physica Status Solidi rrl
Additional Journal Information:
Journal Volume: 12; Journal Issue: 3; Journal ID: ISSN 1862-6254
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; buffer layers; epitaxy; oxides; Sr3Al2O6; strain control; strain relaxation

Citation Formats

Lu, Di, Hikita, Yasuyuki, Baek, David J., Merz, Tyler A., Sato, Hiroki, Kim, Bongju, Yajima, Takeaki, Bell, Christopher, Vailionis, Arturas, Kourkoutis, Lena F., and Hwang, Harold Y. Strain Tuning in Complex Oxide Epitaxial Films Using an Ultrathin Strontium Aluminate Buffer Layer. United States: N. p., 2018. Web. doi:10.1002/pssr.201700339.
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Lu, Di, Hikita, Yasuyuki, Baek, David J., Merz, Tyler A., Sato, Hiroki, Kim, Bongju, Yajima, Takeaki, Bell, Christopher, Vailionis, Arturas, Kourkoutis, Lena F., & Hwang, Harold Y. Strain Tuning in Complex Oxide Epitaxial Films Using an Ultrathin Strontium Aluminate Buffer Layer. United States. https://doi.org/10.1002/pssr.201700339
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Lu, Di, Hikita, Yasuyuki, Baek, David J., Merz, Tyler A., Sato, Hiroki, Kim, Bongju, Yajima, Takeaki, Bell, Christopher, Vailionis, Arturas, Kourkoutis, Lena F., and Hwang, Harold Y. Fri . "Strain Tuning in Complex Oxide Epitaxial Films Using an Ultrathin Strontium Aluminate Buffer Layer". United States. https://doi.org/10.1002/pssr.201700339. https://www.osti.gov/servlets/purl/1457702.
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@article{osti_1457702,
title = {Strain Tuning in Complex Oxide Epitaxial Films Using an Ultrathin Strontium Aluminate Buffer Layer},
author = {Lu, Di and Hikita, Yasuyuki and Baek, David J. and Merz, Tyler A. and Sato, Hiroki and Kim, Bongju and Yajima, Takeaki and Bell, Christopher and Vailionis, Arturas and Kourkoutis, Lena F. and Hwang, Harold Y.},
abstractNote = {A reliable method to apply biaxial strain over a wide range of values with minimal dislocation generation is critical for the study of strain dependent physical properties in oxide thin films and heterostructures. In this study, we systematically controlled the strain state in a perovskite manganite thin film by as much as 1% using a new ultrathin strain-releasing buffer layer Sr3Al2O6, and observed signatures of accompanying magnetic and metal–insulator transitions. The near-zero strain state is achieved within five nanometers of buffer layer thickness, substantially thinner than any oxide epitaxial buffer layers that can continuously tune the film strain states. Furthermore, the majority of misfit dislocations were confined to the Sr3Al2O6 layer, structurally decoupling defects in the film from the substrate.},
doi = {10.1002/pssr.201700339},
journal = {Physica Status Solidi rrl},
number = 3,
volume = 12,
place = {United States},
year = {Fri Jan 05 00:00:00 EST 2018},
month = {Fri Jan 05 00:00:00 EST 2018}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1002/pssr.201700339
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Cited by: 9 works
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Figures / Tables:

Figure 1 Figure 1: a) RHEED intensity oscillations during Nd0.5Sr0.5MnO3 growth on Sr3Al2O6 3.6nm/SrTiO3 (001). b) Reciprocal spacemap of Nd0.5Sr0.5MnO3 80nm/SrTiO3 (001) (top) and Nd0.5Sr0.5MnO3 80nm/Sr3Al2O6 3.6nm/ SrTiO3 (001) (bottom) at room temperature around the SrTiO3 Bragg peak (103). The solid lines are guides to the eye. The stronger and broader (103)more » peak for the x = 3.6 film than the x = 0 film is likely due to dislocation confinement in the buffer layer that increases the film crystallinity, and the higher total dislocation density (including those in the buffer layer) from the larger in-plane mismatch broadening the peak.[29] c) Nd0.5Sr0.5MnO3 lattice constants depending on Sr3Al2O6 thickness. The dotted lines are bulk in-plane (average of a' and b') and out-of-plane (c') pseudo-cubic lattice constants.« less
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