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Title: Effect of ultrathin buffer on the microstructure of highly mismatched epitaxial ZnO films on Al{sub 2}O{sub 3} (0001)

Abstract

The effect of the ultra thin (4 nm) ZnO buffer layer grown at a low temperature of 300 deg. C on the microstructural evolution of highly mismatched ZnO/Al{sub 2}O{sub 3}(0001) films was investigated. Based on the real time synchrotron x-ray scattering, atomic force microscopy, and high resolution electron microscopy, it was shown that the ultrathin two-dimensional (2D) layers play a critical role for improving the ZnO layer quality by inducing 2D growth mode instead of three-dimensional mode at 500 deg. C in early stage. The ZnO films grown on the ultrathin buffer exhibited structural coherence between the surface and the interface in the substrate normal direction in early stage. The great enhancement of the microstructural quality was attributed to the strain accommodation by the 2D ultrathin buffer.

Authors:
 [1];  [2]
  1. AMLCD Division, Samsung Electronics, Cheonan, Chungnam 336-789 (Korea, Republic of)
  2. Department of Advanced Materials Engineering, Korea University of Technology and Education, Cheonan, Chungnam 330-708 (Korea, Republic of)
Publication Date:
OSTI Identifier:
21137283
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 103; Journal Issue: 7; Other Information: DOI: 10.1063/1.2905323; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DEPOSITION; ELECTRON MICROSCOPY; EPITAXY; FILMS; LAYERS; MICROSTRUCTURE; SEMICONDUCTOR MATERIALS; SPUTTERING; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; X-RAY DIFFRACTION; ZINC OXIDES

Citation Formats

Kim, In-Woo, and Lee, Kyu-Mann. Effect of ultrathin buffer on the microstructure of highly mismatched epitaxial ZnO films on Al{sub 2}O{sub 3} (0001). United States: N. p., 2008. Web. doi:10.1063/1.2905323.
Kim, In-Woo, & Lee, Kyu-Mann. Effect of ultrathin buffer on the microstructure of highly mismatched epitaxial ZnO films on Al{sub 2}O{sub 3} (0001). United States. doi:10.1063/1.2905323.
Kim, In-Woo, and Lee, Kyu-Mann. Tue . "Effect of ultrathin buffer on the microstructure of highly mismatched epitaxial ZnO films on Al{sub 2}O{sub 3} (0001)". United States. doi:10.1063/1.2905323.
@article{osti_21137283,
title = {Effect of ultrathin buffer on the microstructure of highly mismatched epitaxial ZnO films on Al{sub 2}O{sub 3} (0001)},
author = {Kim, In-Woo and Lee, Kyu-Mann},
abstractNote = {The effect of the ultra thin (4 nm) ZnO buffer layer grown at a low temperature of 300 deg. C on the microstructural evolution of highly mismatched ZnO/Al{sub 2}O{sub 3}(0001) films was investigated. Based on the real time synchrotron x-ray scattering, atomic force microscopy, and high resolution electron microscopy, it was shown that the ultrathin two-dimensional (2D) layers play a critical role for improving the ZnO layer quality by inducing 2D growth mode instead of three-dimensional mode at 500 deg. C in early stage. The ZnO films grown on the ultrathin buffer exhibited structural coherence between the surface and the interface in the substrate normal direction in early stage. The great enhancement of the microstructural quality was attributed to the strain accommodation by the 2D ultrathin buffer.},
doi = {10.1063/1.2905323},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 7,
volume = 103,
place = {United States},
year = {2008},
month = {4}
}