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Title: Epitaxial growth and piezoelectric characterization of the (1-x)BiScO{sub 3}-(x)PbTiO{sub 3} ultrathin film

Abstract

We studied ferroelectric properties of morphotropic phase boundary (1-x)BiScO{sub 3}-(x)PbTiO{sub 3} (BSPT, x = 0.64) epitaxial thin films on SrTiO{sub 3} (001) and Nb:SrTiO{sub 3} (001). BSPT thin films with various thicknesses were deposited using off-axis radio frequency magnetron sputtering. By analyzing x-ray data of BSPT thin films with various thicknesses, we confirmed that films thinner than {approx}22 nm were in a strained state. Films thicker than {approx}22 nm were in a relaxed state because of the strain relaxation mechanism caused by misfit dislocation formation. Clear piezoresponses and polarization reversal phenomena can be observed in the ultrathin limit down to 8 nm through Piezo Force Microscope experiments. The piezoresponse data as a function of thickness correlates with the structural modification of thin films.

Authors:
; ; ; ;  [1]
  1. Department of Physics, Pusan National University, Busan 609-735 (Korea, Republic of)
Publication Date:
OSTI Identifier:
21538175
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 109; Journal Issue: 6; Other Information: DOI: 10.1063/1.3567297; (c) 2011 American Institute of Physics; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BISMUTH COMPOUNDS; DEPOSITION; DISLOCATIONS; FERROELECTRIC MATERIALS; LEAD COMPOUNDS; MAGNETRONS; MODIFICATIONS; NIOBIUM ADDITIONS; PIEZOELECTRICITY; POLARIZATION; POLYMERASE CHAIN REACTION; RADIOWAVE RADIATION; RELAXATION; SCANDIUM COMPOUNDS; STRAINS; STRONTIUM TITANATES; THICKNESS; THIN FILMS; VAPOR PHASE EPITAXY; X RADIATION; ALKALINE EARTH METAL COMPOUNDS; ALLOYS; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; DIMENSIONS; ELECTRICITY; ELECTROMAGNETIC RADIATION; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EPITAXY; EQUIPMENT; FILMS; GENE AMPLIFICATION; IONIZING RADIATIONS; LINE DEFECTS; MATERIALS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; NIOBIUM ALLOYS; OXYGEN COMPOUNDS; RADIATIONS; STRONTIUM COMPOUNDS; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT ALLOYS; TRANSITION ELEMENT COMPOUNDS

Citation Formats

Wu, Youngsoo, Jin, Yeryeong, Kim, Bongju, Kwon, Daeyoung, and Kim, Bog G. Epitaxial growth and piezoelectric characterization of the (1-x)BiScO{sub 3}-(x)PbTiO{sub 3} ultrathin film. United States: N. p., 2011. Web. doi:10.1063/1.3567297.
Wu, Youngsoo, Jin, Yeryeong, Kim, Bongju, Kwon, Daeyoung, & Kim, Bog G. Epitaxial growth and piezoelectric characterization of the (1-x)BiScO{sub 3}-(x)PbTiO{sub 3} ultrathin film. United States. doi:10.1063/1.3567297.
Wu, Youngsoo, Jin, Yeryeong, Kim, Bongju, Kwon, Daeyoung, and Kim, Bog G. Tue . "Epitaxial growth and piezoelectric characterization of the (1-x)BiScO{sub 3}-(x)PbTiO{sub 3} ultrathin film". United States. doi:10.1063/1.3567297.
@article{osti_21538175,
title = {Epitaxial growth and piezoelectric characterization of the (1-x)BiScO{sub 3}-(x)PbTiO{sub 3} ultrathin film},
author = {Wu, Youngsoo and Jin, Yeryeong and Kim, Bongju and Kwon, Daeyoung and Kim, Bog G},
abstractNote = {We studied ferroelectric properties of morphotropic phase boundary (1-x)BiScO{sub 3}-(x)PbTiO{sub 3} (BSPT, x = 0.64) epitaxial thin films on SrTiO{sub 3} (001) and Nb:SrTiO{sub 3} (001). BSPT thin films with various thicknesses were deposited using off-axis radio frequency magnetron sputtering. By analyzing x-ray data of BSPT thin films with various thicknesses, we confirmed that films thinner than {approx}22 nm were in a strained state. Films thicker than {approx}22 nm were in a relaxed state because of the strain relaxation mechanism caused by misfit dislocation formation. Clear piezoresponses and polarization reversal phenomena can be observed in the ultrathin limit down to 8 nm through Piezo Force Microscope experiments. The piezoresponse data as a function of thickness correlates with the structural modification of thin films.},
doi = {10.1063/1.3567297},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 6,
volume = 109,
place = {United States},
year = {2011},
month = {3}
}