Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries

Stewart, David M.; Pearse, Alexander J.; Kim, Nam S.; Fuller, Elliot J.; Talin, A. Alec; Gregorczyk, Keith; Lee, Sang Bok; Rubloff, Gary W.

doi:10.1021/acs.chemmater.7b04666

Title: Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries

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Abstract

Major advances in thin-film solid-state batteries (TFSSBs) may capitalize on 3D structuring using high-aspect-ratio substrates such as nanoscale pits, pores, trenches, flexible polymers, and textiles. This will require conformal processes such as atomic layer deposition (ALD) for every active functional component of the battery. In this paper, we explore the deposition and electrochemical properties of SnO₂, SnN_y, and SnO_xN_y thin films as TFSSB anode materials, grown by ALD using tetrakisdimethylamido(tin), H₂O, and N₂ plasma as precursors. By controlling the dose ratio between H₂O and N₂, the N–O fraction can be tuned between 0% N and 95% N. The electrochemical properties of these materials were tested across a composition range varying from pure SnO₂, to SnON intermediates, and pure SnNy. In TFSSBs, the SnNy anodes are found to be more stable during cycling than the SnO₂ or SnO_xN_y films, with an initial reversible capacity beyond that of Li–Sn alloying, retaining 75% of their capacity over 200 cycles compared to only 50% for SnO₂. Lastly, the performance of the SnO_xN_y anodes indicates that SnN_y anodes should not be negatively impacted by small levels of O contamination.

Authors:

^[1]; Pearse, Alexander J. ^[2]; Kim, Nam S. ^[3]; Fuller, Elliot J. ^[4];

^[4];

^[2]; Lee, Sang Bok ^[3]; Rubloff, Gary W. ^[5]

Univ. of Maryland, College Park, MD (United States). Institute for Systems Research
Univ. of Maryland, College Park, MD (United States). Department of Materials Science and Engineering
Univ. of Maryland, College Park, MD (United States). Department of Chemistry
Sandia National Lab. (SNL-CA), Livermore, CA (United States). Materials Physics Department
Univ. of Maryland, College Park, MD (United States). Institute for Systems Research, Department of Materials Science and Engineering and Institute for Research in Electronics and Applied Physics

Publication Date:: Fri Mar 30 00:00:00 EDT 2018

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Energy Frontier Research Centers (EFRC) (United States). Nanostructures for Electrical Energy Storage (NEES)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1441462

Report Number(s):: SAND2018-4606J
Journal ID: ISSN 0897-4756; 662738

Grant/Contract Number:: AC04-94AL85000; SC0001160; NA0003525

Resource Type:: Accepted Manuscript

Journal Name:: Chemistry of Materials

Additional Journal Information:: Journal Volume: 30; Journal Issue: 8; Journal ID: ISSN 0897-4756

Publisher:: American Chemical Society (ACS)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Stewart, David M., Pearse, Alexander J., Kim, Nam S., Fuller, Elliot J., Talin, A. Alec, Gregorczyk, Keith, Lee, Sang Bok, and Rubloff, Gary W. Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries.  United States: N. p., 2018. 
Web.  doi:10.1021/acs.chemmater.7b04666.

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                    Stewart, David M., Pearse, Alexander J., Kim, Nam S., Fuller, Elliot J., Talin, A. Alec, Gregorczyk, Keith, Lee, Sang Bok, & Rubloff, Gary W. Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries.  United States.  https://doi.org/10.1021/acs.chemmater.7b04666

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                    Stewart, David M., Pearse, Alexander J., Kim, Nam S., Fuller, Elliot J., Talin, A. Alec, Gregorczyk, Keith, Lee, Sang Bok, and Rubloff, Gary W. Fri .  
"Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries".  United States.  https://doi.org/10.1021/acs.chemmater.7b04666.  https://www.osti.gov/servlets/purl/1441462.

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@article{osti_1441462,

  title        = {Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries},

  author       = {Stewart, David M. and Pearse, Alexander J. and Kim, Nam S. and Fuller, Elliot J. and Talin, A. Alec and Gregorczyk, Keith and Lee, Sang Bok and Rubloff, Gary W.},

  abstractNote = {Major advances in thin-film solid-state batteries (TFSSBs) may capitalize on 3D structuring using high-aspect-ratio substrates such as nanoscale pits, pores, trenches, flexible polymers, and textiles. This will require conformal processes such as atomic layer deposition (ALD) for every active functional component of the battery. In this paper, we explore the deposition and electrochemical properties of SnO2, SnNy, and SnOxNy thin films as TFSSB anode materials, grown by ALD using tetrakisdimethylamido(tin), H2O, and N2 plasma as precursors. By controlling the dose ratio between H2O and N2, the N–O fraction can be tuned between 0% N and 95% N. The electrochemical properties of these materials were tested across a composition range varying from pure SnO2, to SnON intermediates, and pure SnNy. In TFSSBs, the SnNy anodes are found to be more stable during cycling than the SnO2 or SnOxNy films, with an initial reversible capacity beyond that of Li–Sn alloying, retaining 75% of their capacity over 200 cycles compared to only 50% for SnO2. Lastly, the performance of the SnOxNy anodes indicates that SnNy anodes should not be negatively impacted by small levels of O contamination.},

  doi          = {10.1021/acs.chemmater.7b04666},

  journal      = {Chemistry of Materials},

  number       = 8,

  volume       = 30,

  place        = {United States},

  year         = {Fri Mar 30 00:00:00 EDT 2018},

  month        = {Fri Mar 30 00:00:00 EDT 2018}

}

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