Theoretical and Experimental Insight into the Mechanism for Spontaneous Vertical Growth of ReS2 Nanosheets
Abstract
Abstract Rhenium disulfide (ReS 2 ) differs fundamentally from other group‐VI transition metal dichalcogenides (TMDs) due to its low structural symmetry, which results in its optical and electrical anisotropy. Although vertical growth is observed in some TMDs under special growth conditions, vertical growth in ReS 2 is very different in that it is highly spontaneous and substrate‐independent. In this study, the mechanism that underpins the thermodynamically favorable vertical growth mode of ReS 2 is uncovered. It is found that the governing mechanism for ReS 2 growth involves two distinct stages. In the first stage, ReS 2 grows parallel to the growth substrate, consistent with conventional TMD growth. However, subsequent vertical growth is nucleated at points on the lattice where Re atoms are “pinched” together. At such sites, an additional Re atom binds with the cluster of pinched Re atoms, leaving an under‐coordinated S atom protruding out of the ReS 2 plane. This under‐coordinated S is “reactive” and binds to free Re and S atoms, initiating growth in a direction perpendicular to the ReS 2 surface. The utility of such vertical ReS 2 arrays in applications where high surface‐to‐volume ratio and electric‐field enhancement are essential, such as surface enhanced Raman spectroscopy,more »
- Authors:
-
- Rensselaer Polytechnic Inst., Troy, NY (United States)
- New Jersey Institute of Technology, Newark, NJ (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1490616
- Alternate Identifier(s):
- OSTI ID: 1439258
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Functional Materials
- Additional Journal Information:
- Journal Volume: 28; Journal Issue: 30; Journal ID: ISSN 1616-301X
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; field emission; photocatalysis; ReS2 nanosheets; solar water disinfection; vertical growth mechanism
Citation Formats
Ghoshal, Debjit, Yoshimura, Anthony, Gupta, Tushar, House, Andrew, Basu, Swastik, Chen, Yanwen, Wang, Tianmeng, Yang, Yang, Shou, Wenjia, Hachtel, Jordan A., Idrobo, Juan Carlos, Lu, Toh-Ming, Basuray, Sagnik, Meunier, Vincent, Shi, Su-Fei, and Koratkar, Nikhil. Theoretical and Experimental Insight into the Mechanism for Spontaneous Vertical Growth of ReS2 Nanosheets. United States: N. p., 2018.
Web. doi:10.1002/adfm.201801286.
Ghoshal, Debjit, Yoshimura, Anthony, Gupta, Tushar, House, Andrew, Basu, Swastik, Chen, Yanwen, Wang, Tianmeng, Yang, Yang, Shou, Wenjia, Hachtel, Jordan A., Idrobo, Juan Carlos, Lu, Toh-Ming, Basuray, Sagnik, Meunier, Vincent, Shi, Su-Fei, & Koratkar, Nikhil. Theoretical and Experimental Insight into the Mechanism for Spontaneous Vertical Growth of ReS2 Nanosheets. United States. https://doi.org/10.1002/adfm.201801286
Ghoshal, Debjit, Yoshimura, Anthony, Gupta, Tushar, House, Andrew, Basu, Swastik, Chen, Yanwen, Wang, Tianmeng, Yang, Yang, Shou, Wenjia, Hachtel, Jordan A., Idrobo, Juan Carlos, Lu, Toh-Ming, Basuray, Sagnik, Meunier, Vincent, Shi, Su-Fei, and Koratkar, Nikhil. Mon .
"Theoretical and Experimental Insight into the Mechanism for Spontaneous Vertical Growth of ReS2 Nanosheets". United States. https://doi.org/10.1002/adfm.201801286. https://www.osti.gov/servlets/purl/1490616.
@article{osti_1490616,
title = {Theoretical and Experimental Insight into the Mechanism for Spontaneous Vertical Growth of ReS2 Nanosheets},
author = {Ghoshal, Debjit and Yoshimura, Anthony and Gupta, Tushar and House, Andrew and Basu, Swastik and Chen, Yanwen and Wang, Tianmeng and Yang, Yang and Shou, Wenjia and Hachtel, Jordan A. and Idrobo, Juan Carlos and Lu, Toh-Ming and Basuray, Sagnik and Meunier, Vincent and Shi, Su-Fei and Koratkar, Nikhil},
abstractNote = {Abstract Rhenium disulfide (ReS 2 ) differs fundamentally from other group‐VI transition metal dichalcogenides (TMDs) due to its low structural symmetry, which results in its optical and electrical anisotropy. Although vertical growth is observed in some TMDs under special growth conditions, vertical growth in ReS 2 is very different in that it is highly spontaneous and substrate‐independent. In this study, the mechanism that underpins the thermodynamically favorable vertical growth mode of ReS 2 is uncovered. It is found that the governing mechanism for ReS 2 growth involves two distinct stages. In the first stage, ReS 2 grows parallel to the growth substrate, consistent with conventional TMD growth. However, subsequent vertical growth is nucleated at points on the lattice where Re atoms are “pinched” together. At such sites, an additional Re atom binds with the cluster of pinched Re atoms, leaving an under‐coordinated S atom protruding out of the ReS 2 plane. This under‐coordinated S is “reactive” and binds to free Re and S atoms, initiating growth in a direction perpendicular to the ReS 2 surface. The utility of such vertical ReS 2 arrays in applications where high surface‐to‐volume ratio and electric‐field enhancement are essential, such as surface enhanced Raman spectroscopy, field emission, and solar‐based disinfection of bacteria, is demonstrated.},
doi = {10.1002/adfm.201801286},
journal = {Advanced Functional Materials},
number = 30,
volume = 28,
place = {United States},
year = {Mon May 28 00:00:00 EDT 2018},
month = {Mon May 28 00:00:00 EDT 2018}
}
Web of Science
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