A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching Phenomenon
Abstract
Abstract Non‐volatile resistive switching (NVRS) is a widely available effect in transitional metal oxides, colloquially known as memristors, and of broad interest for memory technology and neuromorphic computing. Until recently, NVRS was not known in other transitional metal dichalcogenides (TMDs), an important material class owing to their atomic thinness enabling the ultimate dimensional scaling. Here, various monolayer or few‐layer 2D materials are presented in the conventional vertical structure that exhibit NVRS, including TMDs (MX 2 , M = transitional metal, e.g., Mo, W, Re, Sn, or Pt; X = chalcogen, e.g., S, Se, or Te), TMD heterostructure (WS 2 /MoS 2 ), and an atomically thin insulator (h‐BN). These results indicate the universality of the phenomenon in 2D non‐conductive materials, and feature low switching voltage, large ON/OFF ratio, and forming‐free characteristic. A dissociation–diffusion–adsorption model is proposed, attributing the enhanced conductance to metal atoms/ions adsorption into intrinsic vacancies, a conductive‐point mechanism supported by first‐principle calculations and scanning tunneling microscopy characterizations. The results motivate further research in the understanding and applications of defects in 2D materials.
- Authors:
-
[1];
- Univ. of Texas, Austin, TX (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Univ. of Central Florida, Orlando, FL (United States)
- Peking Univ., Beijing (China); Wuhan Univ. (China)
- Peking Univ., Beijing (China)
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1760114
- Alternate Identifier(s):
- OSTI ID: 1779360
- Grant/Contract Number:
- AC05-00OR22725; DE‐AC05‐00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Materials
- Additional Journal Information:
- Journal Volume: NA; Journal Issue: NA; Journal ID: ISSN 0935-9648
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; two-dimensional materials; resistive switching; memristor; atomristor
Citation Formats
Ge, Ruijing, Wu, Xiaohan, Liang, Liangbo, Hus, Saban M., Gu, Yuqian, Okogbue, Emmanuel, Chou, Harry, Shi, Jianping, Zhang, Yanfeng, Banerjee, Sanjay K., Jung, Yeonwoong, Lee, Jack C., and Akinwande, Deji. A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching Phenomenon. United States: N. p., 2020.
Web. doi:10.1002/adma.202007792.
Ge, Ruijing, Wu, Xiaohan, Liang, Liangbo, Hus, Saban M., Gu, Yuqian, Okogbue, Emmanuel, Chou, Harry, Shi, Jianping, Zhang, Yanfeng, Banerjee, Sanjay K., Jung, Yeonwoong, Lee, Jack C., & Akinwande, Deji. A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching Phenomenon. United States. https://doi.org/10.1002/adma.202007792
Ge, Ruijing, Wu, Xiaohan, Liang, Liangbo, Hus, Saban M., Gu, Yuqian, Okogbue, Emmanuel, Chou, Harry, Shi, Jianping, Zhang, Yanfeng, Banerjee, Sanjay K., Jung, Yeonwoong, Lee, Jack C., and Akinwande, Deji. Mon .
"A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching Phenomenon". United States. https://doi.org/10.1002/adma.202007792. https://www.osti.gov/servlets/purl/1760114.
@article{osti_1760114,
title = {A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching Phenomenon},
author = {Ge, Ruijing and Wu, Xiaohan and Liang, Liangbo and Hus, Saban M. and Gu, Yuqian and Okogbue, Emmanuel and Chou, Harry and Shi, Jianping and Zhang, Yanfeng and Banerjee, Sanjay K. and Jung, Yeonwoong and Lee, Jack C. and Akinwande, Deji},
abstractNote = {Abstract Non‐volatile resistive switching (NVRS) is a widely available effect in transitional metal oxides, colloquially known as memristors, and of broad interest for memory technology and neuromorphic computing. Until recently, NVRS was not known in other transitional metal dichalcogenides (TMDs), an important material class owing to their atomic thinness enabling the ultimate dimensional scaling. Here, various monolayer or few‐layer 2D materials are presented in the conventional vertical structure that exhibit NVRS, including TMDs (MX 2 , M = transitional metal, e.g., Mo, W, Re, Sn, or Pt; X = chalcogen, e.g., S, Se, or Te), TMD heterostructure (WS 2 /MoS 2 ), and an atomically thin insulator (h‐BN). These results indicate the universality of the phenomenon in 2D non‐conductive materials, and feature low switching voltage, large ON/OFF ratio, and forming‐free characteristic. A dissociation–diffusion–adsorption model is proposed, attributing the enhanced conductance to metal atoms/ions adsorption into intrinsic vacancies, a conductive‐point mechanism supported by first‐principle calculations and scanning tunneling microscopy characterizations. The results motivate further research in the understanding and applications of defects in 2D materials.},
doi = {10.1002/adma.202007792},
journal = {Advanced Materials},
number = NA,
volume = NA,
place = {United States},
year = {Mon Dec 28 00:00:00 EST 2020},
month = {Mon Dec 28 00:00:00 EST 2020}
}
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