Coupling MOS quantum dot and phosphorous donor qubit systems

Rudolph, M.; Harvey-Collard, P.; Jock, R.; Jacobson, T.; Wendt, J.; Pluym, T.; Dominguez, J.; Ten-Eyck, G.; Manginell, R.; Lilly, M. P.; Carroll, M. S.

doi:10.1109/IEDM.2016.7838537

Title: Coupling MOS quantum dot and phosphorous donor qubit systems

Abstract

Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin logical qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes. Qubit decoherence is influenced by charge noise, which is of similar strength as epitaxial systems like GaAs and Si/SiGe.

Authors:

Rudolph, M. ^[1]; Harvey-Collard, P. ^[2]; Jock, R. ^[1]; Jacobson, T. ^[1]; Wendt, J. ^[1]; Pluym, T. ^[1]; Dominguez, J. ^[1]; Ten-Eyck, G. ^[1]; Manginell, R. ^[1]; Lilly, M. P. ^[3]; Carroll, M. S. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of Sherbrooke, Quebec (Canada)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies

Publication Date:: Thu Dec 01 00:00:00 EST 2016

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: Work for Others (WFO)

OSTI Identifier:: 1429777

Report Number(s):: SAND2017-4949J
Journal ID: ISSN 2380-9248; 653191

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: IEEE International Electron Devices Meeting

Additional Journal Information:: Journal Volume: 2016; Conference: 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA (United States), 3-7 Dec 2016; Journal ID: ISSN 2380-9248

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING

Citation Formats


                    Rudolph, M., Harvey-Collard, P., Jock, R., Jacobson, T., Wendt, J., Pluym, T., Dominguez, J., Ten-Eyck, G., Manginell, R., Lilly, M. P., and Carroll, M. S. Coupling MOS quantum dot and phosphorous donor qubit systems.  United States: N. p., 2016. 
Web.  doi:10.1109/IEDM.2016.7838537.

Copy to clipboard


                    Rudolph, M., Harvey-Collard, P., Jock, R., Jacobson, T., Wendt, J., Pluym, T., Dominguez, J., Ten-Eyck, G., Manginell, R., Lilly, M. P., & Carroll, M. S. Coupling MOS quantum dot and phosphorous donor qubit systems.  United States.  https://doi.org/10.1109/IEDM.2016.7838537

Copy to clipboard


                    Rudolph, M., Harvey-Collard, P., Jock, R., Jacobson, T., Wendt, J., Pluym, T., Dominguez, J., Ten-Eyck, G., Manginell, R., Lilly, M. P., and Carroll, M. S. Thu .  
"Coupling MOS quantum dot and phosphorous donor qubit systems".  United States.  https://doi.org/10.1109/IEDM.2016.7838537.  https://www.osti.gov/servlets/purl/1429777.

Copy to clipboard


                    
@article{osti_1429777,

  title        = {Coupling MOS quantum dot and phosphorous donor qubit systems},

  author       = {Rudolph, M. and Harvey-Collard, P. and Jock, R. and Jacobson, T. and Wendt, J. and Pluym, T. and Dominguez, J. and Ten-Eyck, G. and Manginell, R. and Lilly, M. P. and Carroll, M. S.},

  abstractNote = {Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin logical qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes. Qubit decoherence is influenced by charge noise, which is of similar strength as epitaxial systems like GaAs and Si/SiGe.},

  doi          = {10.1109/IEDM.2016.7838537},

  journal      = {IEEE International Electron Devices Meeting},

  number       = ,

  volume       = 2016,

  place        = {United States},

  year         = {Thu Dec 01 00:00:00 EST 2016},

  month        = {Thu Dec 01 00:00:00 EST 2016}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1109/IEDM.2016.7838537

Other availability

Search WorldCat to find libraries that may hold this journal

Save / Share:

Export Metadata

Save to My Library

Works referencing / citing this record:

A silicon metal-oxide-semiconductor electron spin-orbit qubit
journal, May 2018

Jock, Ryan M.; Jacobson, N. Tobias; Harvey-Collard, Patrick
Nature Communications, Vol. 9, Issue 1
DOI: 10.1038/s41467-018-04200-0

Long-term drift of Si-MOS quantum dots with intentional donor implants
journal, May 2019

Rudolph, M.; Sarabi, B.; Murray, R.
Scientific Reports, Vol. 9, Issue 1
DOI: 10.1038/s41598-019-43995-w

Long-term drift of Si-MOS quantum dots with intentional donor implants
preprint, January 2018

Rudolph, Martin; Sarabi, Bahman; Murray, Roy
arXiv
DOI: 10.48550/arxiv.1801.07776

Similar Records in DOE PAGES and OSTI.GOV collections:

Si and SiGe based double top gated accumulation mode single electron transistors for quantum bits.

Conference Wendt, Joel Robert ; Ten Eyck, Gregory A ; Childs, Kenton David ; ...

There is significant interest in forming quantum bits (qubits) out of single electron devices for quantum information processing (QIP). Information can be encoded using properties like charge or spin. Spin is appealing because it is less strongly coupled to the solid-state environment so it is believed that the quantum state can better be preserved over longer times (i.e., that is longer decoherence times may be achieved). Long spin decoherence times would allow more complex qubit operations to be completed with higher accuracy. Recently spin qubits were demonstrated by several groups using electrostatically gated modulation doped GaAs double quantum dots (DQD)more »« less
Long-term drift of Si-MOS quantum dots with intentional donor implants

Journal Article Rudolph, M. ; Sarabi, B. ; Murray, R. ; ... - Scientific Reports

Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. Here, we study the low-frequency charge noise by charge offset drift measurements for Si-MOS devices with intentionally implanted donors near the QDs. We show that the MOS system exhibits non-equilibrium drift characteristics, in the form of transients and discrete jumps, that are not dependent on the properties of the donor implants. The equilibrium charge noise suggests a 1/f noise dependence, and a noise strength as low as 1 μeV/more »« less
Cited by 3
https://doi.org/10.1038/s41598-019-43995-w

Full Text Available
Nuclear-driven electron spin rotations in a single donor coupled to a silicon quantum dot

Journal Article Harvey-Collard, Patrick ; Jacobson, Noah Tobias ; Rudolph, Martin ; ...

Silicon chips hosting a single donor can be used to store and manipulate one bit of quantum information. However, a central challenge for realizing quantum logic operations is to couple donors to one another in a controllable way. To achieve this, several proposals rely on using nearby quantum dots (QDs) to mediate an interaction. In this work, we demonstrate the coherent coupling of electron spins between a single 31 P donor and an enriched 28 Si metal-oxide-semiconductor few-electron QD. We show that the electron-nuclear spin interaction on the donor can drive coherent rotations between singlet and triplet electron spin statesmore »« less
https://doi.org/10.1038/s41467-017-01113-2

Full Text Available
Silicon enhancement mode nanostructures for quantum computing.

Conference Carroll, Malcolm S

Development of silicon, enhancement mode nanostructures for solid-state quantum computing will be described. A primary motivation of this research is the recent unprecedented manipulation of single electron spins in GaAs quantum dots, which has been used to demonstrate a quantum bit. Long spin decoherence times are predicted possible in silicon qubits. This talk will focus on silicon enhancement mode quantum dot structures that emulate the GaAs lateral quantum dot qubit but use an enhancement mode field effect transistor (FET) structure. One critical concern for silicon quantum dots that use oxides as insulators in the FET structure is that defects inmore »« less
Precision Tomography of a Three-Qubit Donor Quantum Processor in Silicon

Journal Article Mądzik, Mateusz T. ; Asaad, Serwan ; Youssry, Akram ; ... - Nature (London)

Nuclear spins were among the first physical platforms to be considered for quantum information processing, because of their exceptional quantum coherence and atomic-scale footprint. However, their full potential for quantum computing has not yet been realized, owing to the lack of methods with which to link nuclear qubits within a scalable device combined with multi-qubit operations with sufficient fidelity to sustain fault-tolerant quantum computation. Here we demonstrate universal quantum logic operations using a pair of ion-implanted ³¹P donor nuclei in a silicon nanoelectronic device. A nuclear two-qubit controlled-Z gate is obtained by imparting a geometric phase to a shared electronmore »« less
https://doi.org/10.1038/s41586-021-04292-7

Full Text Available

Similar Records

Title: Coupling MOS quantum dot and phosphorous donor qubit systems

Abstract

Citation Formats

A silicon metal-oxide-semiconductor electron spin-orbit qubit journal, May 2018

Long-term drift of Si-MOS quantum dots with intentional donor implants journal, May 2019

Long-term drift of Si-MOS quantum dots with intentional donor implants preprint, January 2018

A silicon metal-oxide-semiconductor electron spin-orbit qubit
journal, May 2018

Long-term drift of Si-MOS quantum dots with intentional donor implants
journal, May 2019

Long-term drift of Si-MOS quantum dots with intentional donor implants
preprint, January 2018