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Title: Long-term drift of Si-MOS quantum dots with intentional donor implants

Abstract

Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. We study the low-frequency charge noise by charge offset drift measurements for Si-MOS devices with intentionally implanted donors near the QDs. We show that the MOS system exhibits non-equilibrium drift characteristics, in the form of transients and discrete jumps, that are not dependent on the properties of the donor implants. The equilibrium charge noise indicates a 1/ f noise dependence, and a noise strength as low as 1μeV/√Hz, comparable to that reported in more model GaAs and Si/SiGe systems (which have also not been implanted). We demonstrate that implanted qubits, therefore, can be fabricated without detrimental effects on long-term drift or 1/ f noise for devices with less than 50 implanted donors near the qubit.

Authors:
 [1];  [2]; ORCiD logo [2];  [1];  [2]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. National Institute of Standards and Technology, Gaithersburg, MD (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
Work for Others (WFO); USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Scientific User Facilities Division
OSTI Identifier:
1529285
Alternate Identifier(s):
OSTI ID: 1529137
Report Number(s):
SAND-2018-5080J; SAND-2019-0769J
Journal ID: ISSN 2045-2322; 663041
Grant/Contract Number:  
AC04-94AL85000; NA0003525
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 9; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Rudolph, M., Sarabi, B., Murray, R., Carroll, M. S., and Zimmerman, Neil M. Long-term drift of Si-MOS quantum dots with intentional donor implants. United States: N. p., 2019. Web. doi:10.1038/s41598-019-43995-w.
Rudolph, M., Sarabi, B., Murray, R., Carroll, M. S., & Zimmerman, Neil M. Long-term drift of Si-MOS quantum dots with intentional donor implants. United States. doi:10.1038/s41598-019-43995-w.
Rudolph, M., Sarabi, B., Murray, R., Carroll, M. S., and Zimmerman, Neil M. Tue . "Long-term drift of Si-MOS quantum dots with intentional donor implants". United States. doi:10.1038/s41598-019-43995-w. https://www.osti.gov/servlets/purl/1529285.
@article{osti_1529285,
title = {Long-term drift of Si-MOS quantum dots with intentional donor implants},
author = {Rudolph, M. and Sarabi, B. and Murray, R. and Carroll, M. S. and Zimmerman, Neil M.},
abstractNote = {Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. We study the low-frequency charge noise by charge offset drift measurements for Si-MOS devices with intentionally implanted donors near the QDs. We show that the MOS system exhibits non-equilibrium drift characteristics, in the form of transients and discrete jumps, that are not dependent on the properties of the donor implants. The equilibrium charge noise indicates a 1/f noise dependence, and a noise strength as low as 1μeV/√Hz, comparable to that reported in more model GaAs and Si/SiGe systems (which have also not been implanted). We demonstrate that implanted qubits, therefore, can be fabricated without detrimental effects on long-term drift or 1/f noise for devices with less than 50 implanted donors near the qubit.},
doi = {10.1038/s41598-019-43995-w},
journal = {Scientific Reports},
number = 1,
volume = 9,
place = {United States},
year = {2019},
month = {5}
}

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