Air Passivation of Chalcogen Vacancies in Two‐Dimensional Semiconductors
Abstract
Abstract Defects play important roles in semiconductors (SCs). Unlike those in bulk SCs, defects in two‐dimensional (2D) SCs are exposed to the surrounding environment, which can potentially modify their properties/functions. Air is a common environment, yet its impact on the defects in 2D SCs still remains elusive. Here we study the interaction between air and chalcogen vacancies (V X ), the most typical defects in 2D SCs. Although the interaction is weak for most molecules in air, O 2 can be chemisorbed at V X with a barrier that correlates with the SC cohesive energy and can be overcome even at room temperature for certain SCs. Importantly, the chemisorbed O 2 changes the V X from commonly believed harmful carrier‐traps to electronically benign sites. This unusual behavior originates from the isovalence between O 2 and X when bonded with metal. Based on these findings, a facile approach is proposed to improve the performance of 2D SCs by using air/O 2 to passivate the defects.
- Authors:
-
- National Renewable Energy Laboratory Golden CO USA
- National Renewable Energy Laboratory Golden CO USA, Beijing Computational Science Research Center Beijing China
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1401848
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Angewandte Chemie
- Additional Journal Information:
- Journal Name: Angewandte Chemie Journal Volume: 128 Journal Issue: 3; Journal ID: ISSN 0044-8249
- Publisher:
- Wiley Blackwell (John Wiley & Sons)
- Country of Publication:
- Germany
- Language:
- English
Citation Formats
Liu, Yuanyue, Stradins, Pauls, and Wei, Su‐Huai. Air Passivation of Chalcogen Vacancies in Two‐Dimensional Semiconductors. Germany: N. p., 2015.
Web. doi:10.1002/ange.201508828.
Liu, Yuanyue, Stradins, Pauls, & Wei, Su‐Huai. Air Passivation of Chalcogen Vacancies in Two‐Dimensional Semiconductors. Germany. https://doi.org/10.1002/ange.201508828
Liu, Yuanyue, Stradins, Pauls, and Wei, Su‐Huai. Tue .
"Air Passivation of Chalcogen Vacancies in Two‐Dimensional Semiconductors". Germany. https://doi.org/10.1002/ange.201508828.
@article{osti_1401848,
title = {Air Passivation of Chalcogen Vacancies in Two‐Dimensional Semiconductors},
author = {Liu, Yuanyue and Stradins, Pauls and Wei, Su‐Huai},
abstractNote = {Abstract Defects play important roles in semiconductors (SCs). Unlike those in bulk SCs, defects in two‐dimensional (2D) SCs are exposed to the surrounding environment, which can potentially modify their properties/functions. Air is a common environment, yet its impact on the defects in 2D SCs still remains elusive. Here we study the interaction between air and chalcogen vacancies (V X ), the most typical defects in 2D SCs. Although the interaction is weak for most molecules in air, O 2 can be chemisorbed at V X with a barrier that correlates with the SC cohesive energy and can be overcome even at room temperature for certain SCs. Importantly, the chemisorbed O 2 changes the V X from commonly believed harmful carrier‐traps to electronically benign sites. This unusual behavior originates from the isovalence between O 2 and X when bonded with metal. Based on these findings, a facile approach is proposed to improve the performance of 2D SCs by using air/O 2 to passivate the defects.},
doi = {10.1002/ange.201508828},
journal = {Angewandte Chemie},
number = 3,
volume = 128,
place = {Germany},
year = {Tue Nov 24 00:00:00 EST 2015},
month = {Tue Nov 24 00:00:00 EST 2015}
}
https://doi.org/10.1002/ange.201508828
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