Eliminating Trap‐States and Functionalizing Vacancies in 2D Semiconductors by Electrochemistry

doi:10.1002/smll.201901899

Title: Eliminating Trap‐States and Functionalizing Vacancies in 2D Semiconductors by Electrochemistry

Authors:

Shi, Jianjian ^[1]; Zhao, Xunhua ^[2]; Wang, Zhiguo ^[3];

^[2]

Texas Materials Institute and Department of Mechanical EngineeringThe University of Texas at Austin Austin TX 78712 USA, School of Information and Software EngineeringUniversity of Electronic Science and Technology of China Chengdu 610054 China
Texas Materials Institute and Department of Mechanical EngineeringThe University of Texas at Austin Austin TX 78712 USA
School of Information and Software EngineeringUniversity of Electronic Science and Technology of China Chengdu 610054 China

Publication Date:: 2019-10-14

Sponsoring Org.:: USDOE

OSTI Identifier:: 1571350

Grant/Contract Number:: DE‐AC02‐06CH11357

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Small

Additional Journal Information:: Journal Name: Small Journal Volume: 15 Journal Issue: 47; Journal ID: ISSN 1613-6810

Publisher:: Wiley Blackwell (John Wiley & Sons)

Country of Publication:: Germany

Language:: English

Citation Formats


                    Shi, Jianjian, Zhao, Xunhua, Wang, Zhiguo, and Liu, Yuanyue. Eliminating Trap‐States and Functionalizing Vacancies in 2D Semiconductors by Electrochemistry.  Germany: N. p., 2019. 
        Web.  doi:10.1002/smll.201901899.

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                    Shi, Jianjian, Zhao, Xunhua, Wang, Zhiguo, & Liu, Yuanyue. Eliminating Trap‐States and Functionalizing Vacancies in 2D Semiconductors by Electrochemistry.  Germany.  doi:10.1002/smll.201901899.

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                    Shi, Jianjian, Zhao, Xunhua, Wang, Zhiguo, and Liu, Yuanyue. Mon .  
        "Eliminating Trap‐States and Functionalizing Vacancies in 2D Semiconductors by Electrochemistry".  Germany.  doi:10.1002/smll.201901899.

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@article{osti_1571350,

  title        = {Eliminating Trap‐States and Functionalizing Vacancies in 2D Semiconductors by Electrochemistry},

  author       = {Shi, Jianjian and Zhao, Xunhua and Wang, Zhiguo and Liu, Yuanyue},

  abstractNote = {},

  doi          = {10.1002/smll.201901899},

  journal      = {Small},

  number       = 47,

  volume       = 15,

  place        = {Germany},

  year         = {2019},

  month        = {10}

}

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DOI: 10.1002/smll.201901899

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Title: Eliminating Trap‐States and Functionalizing Vacancies in 2D Semiconductors by Electrochemistry

Citation Formats

Triggering the electrocatalytic hydrogen evolution activity of the inert two-dimensional MoS 2 surface via single-atom metal doping journal, January 2015

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Single-Atom Catalysts: Synthetic Strategies and Electrochemical Applications journal, July 2018

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Substitutional Electron and Hole Doping of WSe 2 : Synthesis, Electrical Characterization, and Observation of Band-to-Band Tunneling journal, March 2017

Synergetic interaction between neighbouring platinum monomers in CO2 hydrogenation journal, March 2018

Exploring atomic defects in molybdenum disulphide monolayers journal, February 2015

Air Passivation of Chalcogen Vacancies in Two-Dimensional Semiconductors journal, November 2015

Chemical and Electronic Repair Mechanism of Defects in MoS 2 Monolayers journal, September 2017

Grand canonical electronic density-functional theory: Algorithms and applications to electrochemistry journal, March 2017

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Substantial Impact of Charge on Electrochemical Reactions of Two-Dimensional Materials journal, June 2018

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Near-unity photoluminescence quantum yield in MoS2 journal, November 2015

Defect engineering of two-dimensional transition metal dichalcogenides journal, April 2016

High-mobility and low-carrier-density sputtered MoS 2 film formed by introducing residual sulfur during low-temperature in 3%-H 2 annealing for three-dimensional ICs journal, March 2017

A roadmap for electronic grade 2D materials journal, January 2019

Pseudopotentials for high-throughput DFT calculations journal, January 2014

Atomic Healing of Defects in Transition Metal Dichalcogenides journal, April 2015

Triggering the electrocatalytic hydrogen evolution activity of the inert two-dimensional MoS ₂ surface via single-atom metal doping
journal, January 2015

Native defects in bulk and monolayer ${MoS}_{2}$ from first principles
journal, March 2015

Single-Atom Catalysts: Synthetic Strategies and Electrochemical Applications
journal, July 2018

MoS2 monolayer catalyst doped with isolated Co atoms for the hydrodeoxygenation reaction
journal, March 2017

Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides
journal, March 2016

Recent Progress on Localized Field Enhanced Two-dimensional Material Photodetectors from Ultraviolet-Visible to Infrared
journal, June 2017

The charge-asymmetric nonlocally determined local-electric (CANDLE) solvation model
journal, February 2015

Substitutional Electron and Hole Doping of ${WSe}_{2}$ : Synthesis, Electrical Characterization, and Observation of Band-to-Band Tunneling
journal, March 2017

Synergetic interaction between neighbouring platinum monomers in CO2 hydrogenation
journal, March 2018

Exploring atomic defects in molybdenum disulphide monolayers
journal, February 2015

Air Passivation of Chalcogen Vacancies in Two-Dimensional Semiconductors
journal, November 2015

Chemical and Electronic Repair Mechanism of Defects in MoS ₂ Monolayers
journal, September 2017

Grand canonical electronic density-functional theory: Algorithms and applications to electrochemistry
journal, March 2017

JDFTx: Software for joint density-functional theory
journal, January 2017

Low-Temperature Solution Synthesis of Transition Metal Dichalcogenide Alloys with Tunable Optical Properties
journal, August 2017

Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges
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Metal Halide Perovskite Nanosheet for X-ray High-Resolution Scintillation Imaging Screens
journal, February 2019

Substantial Impact of Charge on Electrochemical Reactions of Two-Dimensional Materials
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PdSe ₂ : Pentagonal Two-Dimensional Layers with High Air Stability for Electronics
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Near-unity photoluminescence quantum yield in MoS2
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Defect engineering of two-dimensional transition metal dichalcogenides
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