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Title: Eliminating Trap‐States and Functionalizing Vacancies in 2D Semiconductors by Electrochemistry

Authors:
 [1];  [2];  [3]; ORCiD logo [2]
  1. Texas Materials Institute and Department of Mechanical EngineeringThe University of Texas at Austin Austin TX 78712 USA, School of Information and Software EngineeringUniversity of Electronic Science and Technology of China Chengdu 610054 China
  2. Texas Materials Institute and Department of Mechanical EngineeringThe University of Texas at Austin Austin TX 78712 USA
  3. School of Information and Software EngineeringUniversity of Electronic Science and Technology of China Chengdu 610054 China
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1571350
Grant/Contract Number:  
DE‐AC02‐06CH11357
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Small
Additional Journal Information:
Journal Name: Small; Journal ID: ISSN 1613-6810
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Shi, Jianjian, Zhao, Xunhua, Wang, Zhiguo, and Liu, Yuanyue. Eliminating Trap‐States and Functionalizing Vacancies in 2D Semiconductors by Electrochemistry. Germany: N. p., 2019. Web. doi:10.1002/smll.201901899.
Shi, Jianjian, Zhao, Xunhua, Wang, Zhiguo, & Liu, Yuanyue. Eliminating Trap‐States and Functionalizing Vacancies in 2D Semiconductors by Electrochemistry. Germany. doi:10.1002/smll.201901899.
Shi, Jianjian, Zhao, Xunhua, Wang, Zhiguo, and Liu, Yuanyue. Tue . "Eliminating Trap‐States and Functionalizing Vacancies in 2D Semiconductors by Electrochemistry". Germany. doi:10.1002/smll.201901899.
@article{osti_1571350,
title = {Eliminating Trap‐States and Functionalizing Vacancies in 2D Semiconductors by Electrochemistry},
author = {Shi, Jianjian and Zhao, Xunhua and Wang, Zhiguo and Liu, Yuanyue},
abstractNote = {},
doi = {10.1002/smll.201901899},
journal = {Small},
number = ,
volume = ,
place = {Germany},
year = {2019},
month = {10}
}

Journal Article:
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This content will become publicly available on October 21, 2020
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