This content will become publicly available on October 21, 2020
Eliminating Trap‐States and Functionalizing Vacancies in 2D Semiconductors by Electrochemistry
- Authors:
-
[2]
- Texas Materials Institute and Department of Mechanical EngineeringThe University of Texas at Austin Austin TX 78712 USA, School of Information and Software EngineeringUniversity of Electronic Science and Technology of China Chengdu 610054 China
- Texas Materials Institute and Department of Mechanical EngineeringThe University of Texas at Austin Austin TX 78712 USA
- School of Information and Software EngineeringUniversity of Electronic Science and Technology of China Chengdu 610054 China
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1571350
- Grant/Contract Number:
- DE‐AC02‐06CH11357
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Small
- Additional Journal Information:
- Journal Name: Small; Journal ID: ISSN 1613-6810
- Publisher:
- Wiley Blackwell (John Wiley & Sons)
- Country of Publication:
- Germany
- Language:
- English
Citation Formats
Shi, Jianjian, Zhao, Xunhua, Wang, Zhiguo, and Liu, Yuanyue. Eliminating Trap‐States and Functionalizing Vacancies in 2D Semiconductors by Electrochemistry. Germany: N. p., 2019.
Web. doi:10.1002/smll.201901899.
Shi, Jianjian, Zhao, Xunhua, Wang, Zhiguo, & Liu, Yuanyue. Eliminating Trap‐States and Functionalizing Vacancies in 2D Semiconductors by Electrochemistry. Germany. doi:10.1002/smll.201901899.
Shi, Jianjian, Zhao, Xunhua, Wang, Zhiguo, and Liu, Yuanyue. Tue .
"Eliminating Trap‐States and Functionalizing Vacancies in 2D Semiconductors by Electrochemistry". Germany. doi:10.1002/smll.201901899.
@article{osti_1571350,
title = {Eliminating Trap‐States and Functionalizing Vacancies in 2D Semiconductors by Electrochemistry},
author = {Shi, Jianjian and Zhao, Xunhua and Wang, Zhiguo and Liu, Yuanyue},
abstractNote = {},
doi = {10.1002/smll.201901899},
journal = {Small},
number = ,
volume = ,
place = {Germany},
year = {2019},
month = {10}
}
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