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Title: Large-Area 2D/3D MoS2-MoO2 Heterostructures with Thermally Stable Exciton and Intriguing Electrical Transport Behaviors

Abstract

To date, scale-up fabrication of transition metal dichalcogenide (TMD-) based 2D/2D or 2D/3D heterostructures with specific functionalities is still a great challenge. This study, for the first time, reports on the controllable synthesis of large-area and continuous 2D/3D semiconductor/metal heterostructures consisting of monolayer MoS2 and bulk MoO2 with unique electrical and optical properties via one-step, vapor-transport-assisted rapid thermal processing. The temperature-dependent electrical transport measurements reveal that the 2D/3D MoS2–MoO2 heterostructure grown on SiO2/Si substrates exhibits metallic phase, while this heterostructure becomes a low-resistance semiconductor when it is grown on fused silica, which is attributed to the different degrees of sulfurization on different substrates, as being confirmed by surface potential analyses. Photoluminescence measurements taken on the MoS2–MoO2 heterostructures reveal the simultaneous presence of both negative trions and neutral excitons, while only neutral excitons are observed in the monolayer MoS2. The trion-binding energy is determined to be ≈27 meV, and the trion signal persists up to 330 K, indicating significant stability at room temperature. This work not only provides a new platform for understanding the intriguing physics in TMD-based heterostructures but also enables the design of more complicated devices with potential applications in nanoelectronics and nanophotonics.

Authors:
 [1];  [1];  [1];  [1];  [2];  [1];  [2];  [1];  [3];  [4];  [1]
+ Show Author Affiliations
  1. Univ. of Nebraska, Lincoln, NE (United States)
  2. Boston Univ., MA (United States)
  3. Beijing Inst. of Technology, Beijing (China)
  4. Inst. de Chimie de la Matière Condensée de Bordeaux (France)
Publication Date:
Research Org.:
Univ. of Nebraska, Lincoln, NE (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1533054
Alternate Identifier(s):
OSTI ID: 1401783
Grant/Contract Number:  
SC0016153
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 7; Journal ID: ISSN 2199-160X
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; materials science; physics; electrical transport; optical transitions; rapid thermal processing; semiconductor/metal heterostructures; transition metal dichalcogenides

Citation Formats

Li, Dawei, Xiao, Zhiyong, Golgir, Hossein Rabiee, Jiang, Lijia, Singh, Vijay Raj, Keramatnejad, Kamran, Smith, Kevin E., Hong, Xia, Jiang, Lan, Silvain, Jean-Francois, and Lu, Yongfeng. Large-Area 2D/3D MoS2-MoO2 Heterostructures with Thermally Stable Exciton and Intriguing Electrical Transport Behaviors. United States: N. p., 2017. Web. doi:10.1002/aelm.201600335.
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Li, Dawei, Xiao, Zhiyong, Golgir, Hossein Rabiee, Jiang, Lijia, Singh, Vijay Raj, Keramatnejad, Kamran, Smith, Kevin E., Hong, Xia, Jiang, Lan, Silvain, Jean-Francois, & Lu, Yongfeng. Large-Area 2D/3D MoS2-MoO2 Heterostructures with Thermally Stable Exciton and Intriguing Electrical Transport Behaviors. United States. https://doi.org/10.1002/aelm.201600335
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Li, Dawei, Xiao, Zhiyong, Golgir, Hossein Rabiee, Jiang, Lijia, Singh, Vijay Raj, Keramatnejad, Kamran, Smith, Kevin E., Hong, Xia, Jiang, Lan, Silvain, Jean-Francois, and Lu, Yongfeng. Wed . "Large-Area 2D/3D MoS2-MoO2 Heterostructures with Thermally Stable Exciton and Intriguing Electrical Transport Behaviors". United States. https://doi.org/10.1002/aelm.201600335. https://www.osti.gov/servlets/purl/1533054.
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@article{osti_1533054,
title = {Large-Area 2D/3D MoS2-MoO2 Heterostructures with Thermally Stable Exciton and Intriguing Electrical Transport Behaviors},
author = {Li, Dawei and Xiao, Zhiyong and Golgir, Hossein Rabiee and Jiang, Lijia and Singh, Vijay Raj and Keramatnejad, Kamran and Smith, Kevin E. and Hong, Xia and Jiang, Lan and Silvain, Jean-Francois and Lu, Yongfeng},
abstractNote = {To date, scale-up fabrication of transition metal dichalcogenide (TMD-) based 2D/2D or 2D/3D heterostructures with specific functionalities is still a great challenge. This study, for the first time, reports on the controllable synthesis of large-area and continuous 2D/3D semiconductor/metal heterostructures consisting of monolayer MoS2 and bulk MoO2 with unique electrical and optical properties via one-step, vapor-transport-assisted rapid thermal processing. The temperature-dependent electrical transport measurements reveal that the 2D/3D MoS2–MoO2 heterostructure grown on SiO2/Si substrates exhibits metallic phase, while this heterostructure becomes a low-resistance semiconductor when it is grown on fused silica, which is attributed to the different degrees of sulfurization on different substrates, as being confirmed by surface potential analyses. Photoluminescence measurements taken on the MoS2–MoO2 heterostructures reveal the simultaneous presence of both negative trions and neutral excitons, while only neutral excitons are observed in the monolayer MoS2. The trion-binding energy is determined to be ≈27 meV, and the trion signal persists up to 330 K, indicating significant stability at room temperature. This work not only provides a new platform for understanding the intriguing physics in TMD-based heterostructures but also enables the design of more complicated devices with potential applications in nanoelectronics and nanophotonics.},
doi = {10.1002/aelm.201600335},
journal = {Advanced Electronic Materials},
number = 7,
volume = 3,
place = {United States},
year = {Wed Apr 26 00:00:00 EDT 2017},
month = {Wed Apr 26 00:00:00 EDT 2017}
}
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https://doi.org/10.1002/aelm.201600335
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    Works referencing / citing this record:

    Mixed-dimensional 2D/3D heterojunctions between MoS 2 and Si(100)
    journal, January 2018

    • Choi, Hyunsoo; Min, Kyung-Ah; Cha, Janghwan
    • Physical Chemistry Chemical Physics, Vol. 20, Issue 39
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    Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides
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    Investigation of atomic and electronic properties of 2D-MoS 2 /3D-GaN mixed-dimensional heterostructures
    journal, July 2019

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