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Title: Large-Area 2D/3D MoS 2 -MoO 2 Heterostructures with Thermally Stable Exciton and Intriguing Electrical Transport Behaviors

Authors:
 [1] ;  [2] ;  [1] ;  [1] ;  [3] ;  [1] ;  [4] ;  [2] ;  [5] ;  [6] ;  [1]
  1. Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln NE 68588-0511 USA
  2. Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln NE 68588-0299 USA, Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln NE 68588-0299 USA
  3. Department of Physics, Boston University, Boston MA 02215 USA
  4. Department of Physics, Boston University, Boston MA 02215 USA, School of Chemical Sciences, University of Auckland, Auckland 1142 New Zealand
  5. School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081 China
  6. Institut de Chimie de la Matière Condensée de Bordeaux, Avenue du Docteur Albert Schweitzer F-33608 Pessac Cedex France
Publication Date:
Grant/Contract Number:
SC0016153
Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Name: Advanced Electronic Materials Journal Volume: 3 Journal Issue: 7; Journal ID: ISSN 2199-160X
Publisher:
Wiley Blackwell (John Wiley & Sons)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1401783

Li, Dawei, Xiao, Zhiyong, Golgir, Hossein Rabiee, Jiang, Lijia, Singh, Vijay Raj, Keramatnejad, Kamran, Smith, Kevin E., Hong, Xia, Jiang, Lan, Silvain, Jean-Francois, and Lu, Yongfeng. Large-Area 2D/3D MoS 2 -MoO 2 Heterostructures with Thermally Stable Exciton and Intriguing Electrical Transport Behaviors. United States: N. p., Web. doi:10.1002/aelm.201600335.
Li, Dawei, Xiao, Zhiyong, Golgir, Hossein Rabiee, Jiang, Lijia, Singh, Vijay Raj, Keramatnejad, Kamran, Smith, Kevin E., Hong, Xia, Jiang, Lan, Silvain, Jean-Francois, & Lu, Yongfeng. Large-Area 2D/3D MoS 2 -MoO 2 Heterostructures with Thermally Stable Exciton and Intriguing Electrical Transport Behaviors. United States. doi:10.1002/aelm.201600335.
Li, Dawei, Xiao, Zhiyong, Golgir, Hossein Rabiee, Jiang, Lijia, Singh, Vijay Raj, Keramatnejad, Kamran, Smith, Kevin E., Hong, Xia, Jiang, Lan, Silvain, Jean-Francois, and Lu, Yongfeng. 2017. "Large-Area 2D/3D MoS 2 -MoO 2 Heterostructures with Thermally Stable Exciton and Intriguing Electrical Transport Behaviors". United States. doi:10.1002/aelm.201600335.
@article{osti_1401783,
title = {Large-Area 2D/3D MoS 2 -MoO 2 Heterostructures with Thermally Stable Exciton and Intriguing Electrical Transport Behaviors},
author = {Li, Dawei and Xiao, Zhiyong and Golgir, Hossein Rabiee and Jiang, Lijia and Singh, Vijay Raj and Keramatnejad, Kamran and Smith, Kevin E. and Hong, Xia and Jiang, Lan and Silvain, Jean-Francois and Lu, Yongfeng},
abstractNote = {},
doi = {10.1002/aelm.201600335},
journal = {Advanced Electronic Materials},
number = 7,
volume = 3,
place = {United States},
year = {2017},
month = {4}
}

Works referenced in this record:

Atomically Thin MoS2 A New Direct-Gap Semiconductor
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Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
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