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Title: Graphene‐Assisted Antioxidation of Tungsten Disulfide Monolayers: Substrate and Electric‐Field Effect

Abstract

Transition metal dichalcogenides (TMDs) have emerged as promising materials to complement graphene for advanced optoelectronics. However, irreversible degradation of chemical vapor deposition‐grown monolayer TMDs via oxidation under ambient conditions limits applications of TMD‐based devices. Here, the growth of oxidation‐resistant tungsten disulfide (WS 2 ) monolayers on graphene is demonstrated, and the mechanism of oxidation of WS 2 on SiO 2 , graphene/SiO 2 , and on graphene suspended in air is elucidated. While WS 2 on a SiO 2 substrate begins oxidation within weeks, epitaxially grown WS 2 on suspended graphene does not show any sign of oxidation, attributed to the screening effect of surface electric field caused by the substrate. The control of a local oxidation of WS 2 on a SiO 2 substrate by a local electric field created using an atomic force microscope tip is also demonstrated.

Authors:
 [1];  [1];  [2];  [1];  [2];  [2];  [1]
+ Show Author Affiliations
  1. Department of Mechanical Engineering Stevens Institute of Technology Hoboken NJ 07030 USA
  2. Department of Mechanical Engineering Columbia University New York NY 10027 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1401758
Grant/Contract Number:  
DE‐SC0012704
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Name: Advanced Materials Journal Volume: 29 Journal Issue: 18; Journal ID: ISSN 0935-9648
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Kang, Kyungnam, Godin, Kyle, Kim, Young Duck, Fu, Shichen, Cha, Wujoon, Hone, James, and Yang, Eui‐Hyeok. Graphene‐Assisted Antioxidation of Tungsten Disulfide Monolayers: Substrate and Electric‐Field Effect. Germany: N. p., 2017. Web. doi:10.1002/adma.201603898.
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Kang, Kyungnam, Godin, Kyle, Kim, Young Duck, Fu, Shichen, Cha, Wujoon, Hone, James, & Yang, Eui‐Hyeok. Graphene‐Assisted Antioxidation of Tungsten Disulfide Monolayers: Substrate and Electric‐Field Effect. Germany. https://doi.org/10.1002/adma.201603898
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Kang, Kyungnam, Godin, Kyle, Kim, Young Duck, Fu, Shichen, Cha, Wujoon, Hone, James, and Yang, Eui‐Hyeok. Fri . "Graphene‐Assisted Antioxidation of Tungsten Disulfide Monolayers: Substrate and Electric‐Field Effect". Germany. https://doi.org/10.1002/adma.201603898.
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@article{osti_1401758,
title = {Graphene‐Assisted Antioxidation of Tungsten Disulfide Monolayers: Substrate and Electric‐Field Effect},
author = {Kang, Kyungnam and Godin, Kyle and Kim, Young Duck and Fu, Shichen and Cha, Wujoon and Hone, James and Yang, Eui‐Hyeok},
abstractNote = {Transition metal dichalcogenides (TMDs) have emerged as promising materials to complement graphene for advanced optoelectronics. However, irreversible degradation of chemical vapor deposition‐grown monolayer TMDs via oxidation under ambient conditions limits applications of TMD‐based devices. Here, the growth of oxidation‐resistant tungsten disulfide (WS 2 ) monolayers on graphene is demonstrated, and the mechanism of oxidation of WS 2 on SiO 2 , graphene/SiO 2 , and on graphene suspended in air is elucidated. While WS 2 on a SiO 2 substrate begins oxidation within weeks, epitaxially grown WS 2 on suspended graphene does not show any sign of oxidation, attributed to the screening effect of surface electric field caused by the substrate. The control of a local oxidation of WS 2 on a SiO 2 substrate by a local electric field created using an atomic force microscope tip is also demonstrated.},
doi = {10.1002/adma.201603898},
journal = {Advanced Materials},
number = 18,
volume = 29,
place = {Germany},
year = {Fri Feb 24 00:00:00 EST 2017},
month = {Fri Feb 24 00:00:00 EST 2017}
}
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Journal Article:
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https://doi.org/10.1002/adma.201603898
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