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Title: Diffusivity of the interstitial hydrogen shallow donor in In2O3

Abstract

Hydrogen has been found to be an n-type dopant in In2O3 that gives rise to unintentional conductivity. An infrared (IR) absorption line observed at 3306 cm–1 has been assigned to the Hi+ center. In this work, two types of experiments have been performed to determine the diffusivity of Hi+ in In2O3 from its IR absorption spectra. (i) At temperatures near 700 K, the O-H line at 3306 cm–1 has been used to determine the diffusivity of Hi+ from its in-diffusion and out-diffusion behaviors. (ii) At temperatures near 160 K, stress has been used to produce a preferential alignment of the Hi+ center that has been detected in IR absorption experiments made with polarized light. With the help of theory, the kinetics with which a stress-induced alignment can be produced yield the time constant for a single jump of the Hi+ center and also the diffusivity of Hi+ near 160 K. The combination of the diffusivity of Hi+ found near 700 K by mass-transport measurements and that found near 160 K from the time constant for a single Hi+ jump determines the diffusivity for Hi+ over eleven decades!

Authors:
ORCiD logo [1];  [1];  [1]; ORCiD logo [1];  [1];  [1]; ORCiD logo [2]
  1. Lehigh Univ., Bethlehem, PA (United States). Dept. of Physics
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1399982
Alternate Identifier(s):
OSTI ID: 1398294
Grant/Contract Number:  
AC05-00OR22725; DMR 1160756
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 123; Journal Issue: 16; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Qin, Ying, Weiser, Philip, Villalta, Karla, Stavola, Michael, Fowler, W. Beall, Biaggio, Ivan, and Boatner, Lynn. Diffusivity of the interstitial hydrogen shallow donor in In2O3. United States: N. p., 2017. Web. doi:10.1063/1.4995593.
Qin, Ying, Weiser, Philip, Villalta, Karla, Stavola, Michael, Fowler, W. Beall, Biaggio, Ivan, & Boatner, Lynn. Diffusivity of the interstitial hydrogen shallow donor in In2O3. United States. https://doi.org/10.1063/1.4995593
Qin, Ying, Weiser, Philip, Villalta, Karla, Stavola, Michael, Fowler, W. Beall, Biaggio, Ivan, and Boatner, Lynn. Fri . "Diffusivity of the interstitial hydrogen shallow donor in In2O3". United States. https://doi.org/10.1063/1.4995593. https://www.osti.gov/servlets/purl/1399982.
@article{osti_1399982,
title = {Diffusivity of the interstitial hydrogen shallow donor in In2O3},
author = {Qin, Ying and Weiser, Philip and Villalta, Karla and Stavola, Michael and Fowler, W. Beall and Biaggio, Ivan and Boatner, Lynn},
abstractNote = {Hydrogen has been found to be an n-type dopant in In2O3 that gives rise to unintentional conductivity. An infrared (IR) absorption line observed at 3306 cm–1 has been assigned to the Hi+ center. In this work, two types of experiments have been performed to determine the diffusivity of Hi+ in In2O3 from its IR absorption spectra. (i) At temperatures near 700 K, the O-H line at 3306 cm–1 has been used to determine the diffusivity of Hi+ from its in-diffusion and out-diffusion behaviors. (ii) At temperatures near 160 K, stress has been used to produce a preferential alignment of the Hi+ center that has been detected in IR absorption experiments made with polarized light. With the help of theory, the kinetics with which a stress-induced alignment can be produced yield the time constant for a single jump of the Hi+ center and also the diffusivity of Hi+ near 160 K. The combination of the diffusivity of Hi+ found near 700 K by mass-transport measurements and that found near 160 K from the time constant for a single Hi+ jump determines the diffusivity for Hi+ over eleven decades!},
doi = {10.1063/1.4995593},
journal = {Journal of Applied Physics},
number = 16,
volume = 123,
place = {United States},
year = {Fri Oct 06 00:00:00 EDT 2017},
month = {Fri Oct 06 00:00:00 EDT 2017}
}

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Works referenced in this record:

Hydrogen centers and the conductivity of I n 2 O 3 single crystals
journal, February 2015


Motional characteristics of positively charged muonium defects in In2O3
conference, January 2014

  • Baker, B. B.; Celebi, Y. G.; Lichti, R. L.
  • INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013: Proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013, AIP Conference Proceedings
  • DOI: 10.1063/1.4865662

Application of hydrogen-doped In2O3 transparent conductive oxide to thin-film microcrystalline Si solar cells
journal, March 2010


Electrical Conductivity and Growth of Single‐Crystal Indium Sesquioxide
journal, October 1964

  • Remeika, J. P.; Spencer, E. G.
  • Journal of Applied Physics, Vol. 35, Issue 10
  • DOI: 10.1063/1.1713110

Shallow donor state of hydrogen in In 2 O 3 and SnO 2 : Implications for conductivity in transparent conducting oxides
journal, August 2009


Hydrogen-doped In2O3 as High-mobility Transparent Conductive Oxide
July 2007


Evaporated Sn‐doped In 2 O 3 films: Basic optical properties and applications to energy‐efficient windows
journal, December 1986

  • Hamberg, I.; Granqvist, C. G.
  • Journal of Applied Physics, Vol. 60, Issue 11
  • DOI: 10.1063/1.337534

On the solid phase crystallization of In 2 O 3 :H transparent conductive oxide films prepared by atomic layer deposition
journal, August 2016

  • Macco, Bart; Verheijen, Marcel A.; Black, Lachlan E.
  • Journal of Applied Physics, Vol. 120, Issue 8
  • DOI: 10.1063/1.4962008

Hydrogen doping in indium oxide: An ab initio study
journal, November 2009


Simultaneous diffusion of oppositely charged impurities in semiconductors
journal, January 1966


Bulk and surface characterization of In 2 O 3 (001) single crystals
journal, March 2012


The configuration and diffusion of isolated oxygen in silicon and germanium
journal, August 1964

  • Corbett, J. W.; McDonald, R. S.; Watkins, G. D.
  • Journal of Physics and Chemistry of Solids, Vol. 25, Issue 8
  • DOI: 10.1016/0022-3697(64)90100-3

The 3942- cm 1 optical band in irradiated silicon
journal, February 1987

  • Davies, Gordon; Lightowlers, Edward C.; Stavola, Michael
  • Physical Review B, Vol. 35, Issue 6
  • DOI: 10.1103/PhysRevB.35.2755

Structure and dynamics of the Be-H complex in GaAs
journal, April 1989


Symmetry and diffusivity of the interstitial hydrogen shallow-donor center in In2O3
journal, November 2016

  • Weiser, Philip; Qin, Ying; Yin, Weikai
  • Applied Physics Letters, Vol. 109, Issue 20
  • DOI: 10.1063/1.4967943

Works referencing / citing this record:

Tutorial: Novel properties of defects in semiconductors revealed by their vibrational spectra
journal, April 2018

  • Stavola, Michael; Fowler, W. Beall
  • Journal of Applied Physics, Vol. 123, Issue 16
  • DOI: 10.1063/1.5011036