Symmetry and diffusivity of the interstitial hydrogen shallow-donor center in In2O3

Weiser, Philip; Qin, Ying; Yin, Weikai; Stavola, Michael; Fowler, W. Beall; Boatner, Lynn A.

doi:10.1063/1.4967943

Title: Symmetry and diffusivity of the interstitial hydrogen shallow-donor center in In₂O₃

Journal Article · Wed Nov 16 04:00:00 UTC 2016 · Applied Physics Letters

DOI: https://doi.org/10.1063/1.4967943 · OSTI ID:1333090

Weiser, Philip ^[1]; Qin, Ying ^[1]; Yin, Weikai ^[1];

^[1]; Fowler, W. Beall ^[1];

^[2]

Lehigh Univ., Bethlehem, PA (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Uniaxial stress experiments performed for the 3306 cm^-1 vibrational line assigned to the interstitial-hydrogen, shallow-donor center in In₂O₃ reveal its symmetry and transition- moment direction. The defect alignment that can be produced by a [001] stress applied at 165 K is due to a process that is also a hydrogen- diffusion jump, providing a microscopic determination of the diffusion constant for H in In₂O₃ and its mechanism. Lastly, our experimental results strongly complement theoretical predictions for the structure and diffusion of the interstitial hydrogen donor center in In₂O₃.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1333090

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 109; ISSN APPLAB; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (22)

The configuration and diffusion of isolated oxygen in silicon and germanium Corbett, J. W.; McDonald, R. S.; Watkins, G. D. Journal of Physics and Chemistry of Solids, Vol. 25, Issue 8 https://doi.org/10.1016/0022-3697(64)90100-3	journal	August 1964
Electron concentration and mobility in In2O3 De Wit, J. H. W.; Van Unen, G.; Lahey, M. Journal of Physics and Chemistry of Solids, Vol. 38, Issue 8 https://doi.org/10.1016/0022-3697(77)90117-2	journal	January 1977
The high temperature behavior of In2O3 de Wit, J. H. W. Journal of Solid State Chemistry, Vol. 13, Issue 3 https://doi.org/10.1016/0022-4596(75)90118-8	journal	March 1975
Vibrational Spectroscopy of Light Element Impurities in Semiconductors Stavola, Michael Semiconductors and Semimetals https://doi.org/10.1016/S0080-8784(08)62976-2	book	January 1999
Application of hydrogen-doped In2O3 transparent conductive oxide to thin-film microcrystalline Si solar cells Koida, Takashi; Sai, Hitoshi; Kondo, Michio Thin Solid Films, Vol. 518, Issue 11 https://doi.org/10.1016/j.tsf.2009.08.060	journal	March 2010
Hydrogen multicentre bonds Janotti, Anderson; Van de Walle, Chris G. Nature Materials, Vol. 6, Issue 1 https://doi.org/10.1038/nmat1795	journal	December 2006
n -type doping of oxides by hydrogen Kılıç, Çetin; Zunger, Alex Applied Physics Letters, Vol. 81, Issue 1 https://doi.org/10.1063/1.1482783	journal	July 2002
Electrical Conductivity and Growth of Single‐Crystal Indium Sesquioxide Remeika, J. P.; Spencer, E. G. Journal of Applied Physics, Vol. 35, Issue 10 https://doi.org/10.1063/1.1713110	journal	October 1964
Evaporated Sn‐doped In ₂ O ₃ films: Basic optical properties and applications to energy‐efficient windows Hamberg, I.; Granqvist, C. G. Journal of Applied Physics, Vol. 60, Issue 11 https://doi.org/10.1063/1.337534	journal	December 1986
Identification of the native defect doping mechanism in amorphous indium zinc oxide thin films studied using ultra high pressure oxidation Lee, Sunghwan; Paine, David C. Applied Physics Letters, Vol. 102, Issue 5 https://doi.org/10.1063/1.4790187	journal	February 2013
Motional characteristics of positively charged muonium defects in In2O3 Baker, B. B.; Celebi, Y. G.; Lichti, R. L. INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013: Proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013, AIP Conference Proceedings https://doi.org/10.1063/1.4865662	conference	January 2014
Contrasting the theoretical properties of hydrogen in SnO2, In2O3, and TiO2 Fowler, W. Beall; Stavola, Michael; Bekisli, Figen INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013: Proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013, AIP Conference Proceedings https://doi.org/10.1063/1.4865670	conference	January 2014
Behaviour of hydrogen in wide band gap oxides Li, H.; Robertson, J. Journal of Applied Physics, Vol. 115, Issue 20 https://doi.org/10.1063/1.4878415	journal	May 2014
Conductivity in transparent oxide semiconductors King, P. D. C.; Veal, T. D. Journal of Physics: Condensed Matter, Vol. 23, Issue 33 https://doi.org/10.1088/0953-8984/23/33/334214	journal	August 2011
The 3942- cm − 1 optical band in irradiated silicon Davies, Gordon; Lightowlers, Edward C.; Stavola, Michael Physical Review B, Vol. 35, Issue 6 https://doi.org/10.1103/PhysRevB.35.2755	journal	February 1987
Shallow donor state of hydrogen in In 2 O 3 and SnO 2 : Implications for conductivity in transparent conducting oxides King, P. D. C.; Lichti, R. L.; Celebi, Y. G. Physical Review B, Vol. 80, Issue 8 https://doi.org/10.1103/PhysRevB.80.081201	journal	August 2009
Hydrogen doping in indium oxide: An ab initio study Limpijumnong, Sukit; Reunchan, Pakpoom; Janotti, Anderson Physical Review B, Vol. 80, Issue 19 https://doi.org/10.1103/PhysRevB.80.193202	journal	November 2009
Bulk and surface characterization of In 2 O 3 (001) single crystals Hagleitner, Daniel R.; Menhart, Manfred; Jacobson, Peter Physical Review B, Vol. 85, Issue 11 https://doi.org/10.1103/PhysRevB.85.115441	journal	March 2012
Hydrogen centers and the conductivity of I n 2 O 3 single crystals Yin, Weikai; Smithe, Kirby; Weiser, Philip Physical Review B, Vol. 91, Issue 7 https://doi.org/10.1103/PhysRevB.91.075208	journal	February 2015
Hydrogen as a Cause of Doping in Zinc Oxide Van de Walle, Chris G. Physical Review Letters, Vol. 85, Issue 5 https://doi.org/10.1103/PhysRevLett.85.1012	journal	July 2000
Hydrogen-doped In₂O₃ as High-mobility Transparent Conductive Oxide Koida, Takashi; Fujiwara, Hiroyuki; Kondo, Michio https://doi.org/10.1143/JJAP.46.L685		July 2007
Hydrogen in oxide semiconductors McCluskey, Matthew D.; Tarun, Marianne C.; Teklemichael, Samuel T. Journal of Materials Research, Vol. 27, Issue 17 https://doi.org/10.1557/jmr.2012.137	journal	May 2012

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Hydrogen motion in rutile TiO2 Hupfer, A. J.; Monakhov, E. V.; Svensson, B. G. Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/s41598-017-16660-3	journal	December 2017
Hydrogen motion in rutile TiO2 Hupfer, A. J.; Monakhov, E. V.; Svensson, B. G. Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/s41598-017-16660-3	journal	December 2017
Diffusivity of the interstitial hydrogen shallow donor in In ₂ O ₃ Qin, Ying; Weiser, Philip; Villalta, Karla Journal of Applied Physics, Vol. 123, Issue 16 https://doi.org/10.1063/1.4995593	journal	April 2018
A review of Ga ₂ O ₃ materials, processing, and devices Pearton, S. J.; Yang, Jiancheng; Cary, Patrick H. Applied Physics Reviews, Vol. 5, Issue 1 https://doi.org/10.1063/1.5006941	journal	March 2018
Tutorial: Novel properties of defects in semiconductors revealed by their vibrational spectra Stavola, Michael; Fowler, W. Beall Journal of Applied Physics, Vol. 123, Issue 16 https://doi.org/10.1063/1.5011036	journal	April 2018

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Title: Symmetry and diffusivity of the interstitial hydrogen shallow-donor center in In2O3

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Title: Symmetry and diffusivity of the interstitial hydrogen shallow-donor center in In₂O₃