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Title: Hydrogen centers and the conductivity of In 2O 3 single crystals

A series of infrared absorption experiments and complementary theory have been performed in order to determine the properties of OH and OD centers in In 2O 3 single crystals. Annealing In 2O 3 samples in H 2 or D 2 at temperatures near 450°C produces an n-type layer ≈0.06mm thick with an n-type doping of 1.6×1019 cm -3. The resulting free-carrier absorption is correlated with an OH center with a vibrational frequency of 3306 cm -1 that we associate with interstitial H +. Additional O-H (O-D) vibrational lines are assigned to metastable configurations of the interstitial H +(D +) center and complexes of H (D) with In vacancies. In addition, unlike other oxides studied recently where H trapped at an oxygen vacancy is the dominant shallow donor (ZnO and SnO 2, for example), interstitial H + is found to be the dominant H-related shallow donor in In 2O 3.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [3] ;  [3] ;  [4]
  1. Lehigh Univ., Bethlehem, PA (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
  3. Univ. of Florida, Gainesville, FL (United States)
  4. Dresden Univ. of Technology (Germany)
Publication Date:
Grant/Contract Number:
AC05-00OR22725
Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 91; Journal Issue: 7; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; In2O3; single crystals; Hydrogen
OSTI Identifier:
1286842
Alternate Identifier(s):
OSTI ID: 1181179