Rapid solidification growth mode transitions in Al-Si alloys by dynamic transmission electron microscopy

Roehling, John D.; Coughlin, Daniel R.; Gibbs, John W.; Baldwin, J. Kevin; Mertens, James C. E.; Campbell, Geoffrey H.; Clarke, Amy J.; McKeown, Joseph T.

doi:10.1016/j.actamat.2017.03.061

Title: Rapid solidification growth mode transitions in Al-Si alloys by dynamic transmission electron microscopy

Full Record
Other Related Research

Authors:

Roehling, John D.; Coughlin, Daniel R.;

; Baldwin, J. Kevin; Mertens, James C. E.; Campbell, Geoffrey H.; Clarke, Amy J.; McKeown, Joseph T.

Publication Date:: 2017-06-01

Sponsoring Org.:: USDOE

OSTI Identifier:: 1397853

Grant/Contract Number:: FWP SCW0974

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Acta Materialia

Additional Journal Information:: Journal Name: Acta Materialia Journal Volume: 131 Journal Issue: C; Journal ID: ISSN 1359-6454

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

Citation Formats


                    Roehling, John D., Coughlin, Daniel R., Gibbs, John W., Baldwin, J. Kevin, Mertens, James C. E., Campbell, Geoffrey H., Clarke, Amy J., and McKeown, Joseph T.. Rapid solidification growth mode transitions in Al-Si alloys by dynamic transmission electron microscopy.  United States: N. p., 2017. 
Web.  doi:10.1016/j.actamat.2017.03.061.

Copy to clipboard


                    Roehling, John D., Coughlin, Daniel R., Gibbs, John W., Baldwin, J. Kevin, Mertens, James C. E., Campbell, Geoffrey H., Clarke, Amy J., & McKeown, Joseph T.. Rapid solidification growth mode transitions in Al-Si alloys by dynamic transmission electron microscopy.  United States.  https://doi.org/10.1016/j.actamat.2017.03.061

Copy to clipboard


                    Roehling, John D., Coughlin, Daniel R., Gibbs, John W., Baldwin, J. Kevin, Mertens, James C. E., Campbell, Geoffrey H., Clarke, Amy J., and McKeown, Joseph T.. Thu .  
"Rapid solidification growth mode transitions in Al-Si alloys by dynamic transmission electron microscopy".  United States.  https://doi.org/10.1016/j.actamat.2017.03.061.

Copy to clipboard


                    
@article{osti_1397853,

  title        = {Rapid solidification growth mode transitions in Al-Si alloys by dynamic transmission electron microscopy},

  author       = {Roehling, John D. and Coughlin, Daniel R. and Gibbs, John W. and Baldwin, J. Kevin and Mertens, James C. E. and Campbell, Geoffrey H. and Clarke, Amy J. and McKeown, Joseph T.},

  abstractNote = {},

  doi          = {10.1016/j.actamat.2017.03.061},

  journal      = {Acta Materialia},

  number       = C,

  volume       = 131,

  place        = {United States},

  year         = {2017},

  month        = {6}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Publisher's Version of Record
https://doi.org/10.1016/j.actamat.2017.03.061

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 40 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Determination of crystal growth rates during rapid solidification of polycrystalline aluminum by nano-scale spatio-temporal resolution in situ transmission electron microscopy

Journal Article Zweiacker, K. ; McKeown, J. T. ; Liu, C. ; ... - Journal of Applied Physics

In situ investigations of rapid solidification in polycrystalline Al thin films were conducted using nano-scale spatio-temporal resolution dynamic transmission electron microscopy. Differences in crystal growth rates and asymmetries in melt pool development were observed as the heat extraction geometry was varied by controlling the proximity of the laser-pulse irradiation and the associated induced melt pools to the edge of the transmission electron microscopy support grid, which acts as a large heat sink. Experimental parameters have been established to maximize the reproducibility of the material response to the laser-pulse-related heating and to ensure that observations of the dynamical behavior of themore »« less
Cited by 10
https://doi.org/10.1063/1.4960443

Full Text Available
In-situ transmission electron microscopy of crystal growth-mode transitions during rapid solidification of a hypoeutectic Al-Cu ally

Journal Article McKeown, J T ; Kulovits, A K ; Liu, C ; ... - Acta Materialia, vol. 65, na, December 23, 2013, pp. 56-68
Full Text Available
In situ transmission electron microscopy investigation of the interfacial reaction between Ni and Al during rapid heating in a nanocalorimeter

Journal Article Grapes, Michael D. ; LaGrange, Thomas ; Woll, Karsten ; ... - APL Materials
Cited by 35
https://doi.org/10.1063/1.4900818
Composition and automated crystal orientation mapping of rapid solidification products in hypoeutectic Al-4 at.%Cu alloys

Journal Article Zweiacker, K. W. ; Liu, Can ; Gordillo, M. A. ; ... - Acta Materialia

Rmore »« less
Cited by 21
https://doi.org/10.1016/j.actamat.2017.11.040

Full Text Available
Interface velocity dependent solute trapping and phase selection during rapid solidification of laser melted hypo-eutectic Al-11at.%Cu alloy

Journal Article Bathula, Vishwanadh ; Liu, Can ; Zweiacker, Kai ; ... - Acta Materialia

Microstructure formation of a hypo-eutectic Al-11Cu (atom percent) alloy during solidification after laser melting has been studied by transmission electron microscopy (TEM). The evolution of the solid-liquid-interface velocity, V_SL, during the solidification process has been determined from direct observation by in-situ TEM. This enabled correlating V_SL with development of four distinct microstructure zones. Crystal growth mode transitions from planar to cellular, cellular to dendritic, dendritic to cellular, and cellular to planar, have been observed for the accelerating solid-liquid-interface. The transition from coupled two-phase growth to the single-phase growth occurred for V_SL = V_a = (0.80±0.05) m/s, where V_a is themore »« less
Cited by 20
https://doi.org/10.1016/j.actamat.2020.04.006

Full Text Available

Similar Records